新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.     

Effects of surface roughness of substrates on the c-axis preferred orientation of ZnO films deposited by r.f. magnetron sputtering

The c-axis preferred orientation of ZnO film is the most important factor for its successful application in piezoelectric devices. The effects of surface roughness of the substrate on the c-axis preferred orientation of ZnO thin films, deposited by radio frequency magnetron sputtering, were investigated. During sputtering, the oxygen content in the argon environment used was varied from 0 to 70% at a total sputtering pressure of 10 mTorr. Very smooth Si, smooth evaporated Au/Si, smooth evaporated-Al/Si, and rough sputtered-Al/Si were used as substrates. Their r.m.s. roughnesses, as measured by atomic force microscopy, were 1.27, 17.1, 21.1 and 65-118 Å, respectively. The crystalline structure and the angular spread of the (0 0* 2) plane normal to the ZnO films were determined using X-ray diffraction and X-ray rocking curves, respectively. The crystallinity and the preferred c-axis orientation of the ZnO films were strongly dependent on the surface roughness of the substrates rather than on the oxygen content of the working environment or on the chemical nature of the substrate.     

薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．     

Preparation of submicrometer-sized titania hollow spheres by templating sulfonated polystyrene latex particles

Submicrometer-sized titania hollow spheres with tunable shell thickness and smooth surfaces have been successfully synthesized by employing sulfonated polystyrene (PS) latex particles as a template in sol-gel method. The structure of the particles was characterized by scanning electron microscopy and transmission electron microscopy. The shell thickness was readily tuned by altering the concentration of titanium tetrabutoxide (TBOT) in ethanol solutions. The surface roughness as well as the shell thickness has the tendency to increase with the increase in the concentration of TBOT. The diameter of the hollow spheres was on the average of 20-26% smaller than the diameter of template PS latex particles. Some titania fragments were also observed for the sample with the highest TBOT concentration.     

在线磨辊辊面粗糙度的实验研究

影响轧辊表面粗糙度的因素很多，为此对影响辊面粗糙度的因素进行了系统分析和实验研究，得出了轧辊和砂轮的速度、砂轮粒度、砂轮直径及磨削液等主要因素对轧辊表面粗糙度影响的一般规律。利用回归分析的方法建立了轧辊表面粗糙度的数学模型，并将计算值与实测值进行了比较，发现两者基本一致。此项研究为适时控制冷轧带钢在线磨辊辊面粗糙度提供了计算模型。     

Gloss Properties and Surface Morphology Relationships of Fruits

Eggplants exhibited a higher average gloss reading (15.3 Gloss Units (GU)) than mature green tomatoes (12.0 GU) and apples (8.2 GU) using a flat surface glossmeter. The same trend was observed using a novel curved surface glossmeter. Scanning electron micrographs revealed that epicuticular wax covering eggplants had a smoother structure than that of tomatoes and apples, providing a more effective light scattering surface. Wax removal resulted in decreases in gloss, with average readings of 9.5, 7.4 and 6.3 GU for eggplants, tomatoes and apples, respectively. These results indicate the extent to which wax may influence shininess, although roughness measurements of flattened peel after wax removal suggest that surface topography also influences gloss.     

接触传热表面粗糙度曲线的统计特征

测量了一般机械加工表面的轮廓曲线，基于小波变换提取了粗糙度曲线，分析了轮廓高度和接触峰高度的统计分布特征。研究结果表明，轮廓高度不服从严格的正态分布，但具有一定的正态性，而接触峰高度的统计特征与其评定标准有直接的关系。因此，对于接触热阻的计算模型来说，接触点数的计算应以合理选取接触峰的评定标准为前提。     

表面粗糙度的自动确定

根据零件精度，在CAD系统中能够快速、准确地自动确定其表面粗糙度，从其间接关系上分析并推导出了一套实用的换算公式，并使用在某CAD中。     

非接触型光外差轮廓仪

本文介绍一种纳米级非接触型高精度光外差轮廓仪,它是基于普通光路的光外差干涉仪。工件表面被两束有微小频差的激光束所照射,其中一束经聚焦后用作测量光探针来扫描工件表面,另一束则用作参考光束。两束光经表面反射后产生干涉。测量信号和参考信号的相位差与表面的微不平值成正比。仪器的横向分辨率为2μm,高度分辨率为1 nm,它不需要对试样作大范围的调整,且可用试样自身作参考面。信号经光电转换后由微型计算机进行处理,它能快速完成测量、计算、显示及打印出各种参数和曲线。