Si基n型GaN的欧姆接触研究

GaN材料在光电子器件领域的广泛应用前景使得金属与其欧姆接触的研究成为必然。本对Si基n型GaN上的A1单层及Ti/Al双层电极进行了研究。通过对不同退火条件下的I—U特性曲线，X射线衍射以及二次离子质谱分析，揭示了界面固相反应对欧姆接触的影响，提出了改善这两种电极欧姆接触的二次退火方法。     

LD钢超塑性压缩变形参数与金相组织

通过对ＬＤ（７Ｃｒ７Ｍｏ３Ｖ２Ｓｉ）模具钢起塑性压缩变形后的金相组织观察研究，分析了变形参数、原始组织对变形后金相组织的影响。     

电弧熔铸的Nb-18Si-5Mo-5Hf-2C复合材料的力学性能

以纯度为 99.98%的Nb、1 0N的Si、99.99%的Mo、99.9%的Hf及 99.5 %的NbC粉为原料 ,电弧熔铸制备Nb -1 8Si-5Mo -5Hf-2C % (摩尔分数 )复合材料 ,将其于真空中 2 0 70K热处理 2 0h。结果表明 ,该复合材料具有特好的极限抗拉强度— 1470K时为 480Gpa;脆 -塑转变温度为 1 470～1 5     

薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．     

Preparation and Properties of Sintering Additives Coated Si3N4 from Heterogeneous Nucleation Processing

The sintering additives such as Al2O3 and /or Y2O3 were coated on the surfaces of Si3N4 particles via heterogeneous nucleation processing using a buffered pH solution as the precipitation reagent .They nucleated and grew only on the surfaces of Si3N4 and did not form sol particles in solution by TEM observation .The isoelectric point(IEP) of coated Si3N4 was different from that of as-received Si3N4.The IEP of Al(OH)3-coated Si3N4 occurred at pH8.4, which is close to that of alumina .When Al(OH)3-coated Si3N4 particles were coated with Y(OH)3,the IEP of coated Si3N4 powder shifted from pH8.4 to pH9.2 ,similar to that of yttria.In addition ,the rheological data showed that Al2O3 and /or Y2O3 coated Si3N4 suspension is nearly Newtonian and that added Si3N4 suspension shows a shear rate thinning behavior.     

Mg-Si基热电化合物的研究现状

重点综述了Mg-Si基热电化合物的基本特性，该体系热电材料的制备方法与掺杂改性的研究进展，并提出了要重点解决的问题。     

Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.