用于高频谐振器的PbTiO_3基压电陶瓷

传统的PZT压电陶瓷的相对介电常数较大,一般为1 000以上,用于高频谐振器不易与线路匹配;而PbTiO3基压电陶瓷的相对介电常数较小,一般仅为200左右,对于10 MHz以上频率的谐振器,用PbTiO3基压电陶瓷作为压电振子是最佳的选择。本文主要研究用于高频谐振器的MnO2和Nd2O3改性PbTiO3基压电陶瓷的性质。PbTiO3基压电陶瓷的性质的改善是与此种陶瓷的制备工艺,显微结构和电导机制紧密相关的。     

β″－Al_2O_3陶瓷的强化和韧化

研究了稳定ＺｒＯ＿２和部份稳定ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的强化和韧化作用，观察了不同种类、不同含量的ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的显微结构、力学性能和电导率的影响，探讨了β″－Ａｌ＿２Ｏ＿３的韧化机理。     

微量Ag对CP276合金性能和组织的影响

研究添加不同含量的Ａｇ对ＣＰ２７６合金的拉伸性能和时效组织的影响。对拉伸强度、延伸率测试及透射电镜观察表明：０．１１ｗｔ％加入可促进Ｔ１相析出，使合金强度值升高；０．３５ｗｔ％Ａｇ的加入可在时效前期生成富Ａｇ、Ｍｇ的稳定的ＧＰ区，从而降低合金中Ｃｕ的固溶度，阻碍Ｔ１相析出，时效后期，ＧＰ区分解，生成大量Ｔ１相，使合金强度值显著升高。     

Laser multi-layer classing of Mg-based alloys

By laser multi-layer cladding using a pulsed Nd-YAG irradiation the thickness of the cladding zone Mgbased alloys(ZM2 and ZM5)can reach about 1.0mm.The microstructure of the substrate and the classing zone was studied using optical microscope.scanning electron microscopy(SEM),X-ray diffractometry(XRD0and micro hardness analysis.It is observed that constituent of ZM5 alloy is δ Mg17Al12,that of ZM2 alloy is α MgZn Mg9Ce.That of cladding layer ZM2 alloy(L-ZM2)is Mg Mg2 Zn11 MgCe;while that of the cladding layer ZM5 alloy(LZM5)is Mg Mg32（Al,Zn)49,The hardness of the cladding area can be increased to values above HV127.Very fine uniform microstructure and the produced new phases of nanometer/sub-micrometer order were obtained.Now,many repaired Mg-based alloy components have been passed by flying test in outside field.     

Si3N4／CrN nanostructured muitilayers grown by RF reactive magnetron sputtering

The amorphous/polycrystalline Si3N4/CrN nancrstructured multilayer films have been prepared by radio frequency (RF) reactive magnetron sputtering. The composition, microstructure and mechanical properties of these films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and nano-indentation. The CrN and Si3N4 single layer films are polycrystalline face centered-cubic and amorphous structures, respectively. The CrN and Si3N4 layers are nearly stoichiometric. The HRTEM image indicates that the interfaces are planar and modulation structure is clear in multilayers. The hardness values of Si3N4/CrN multilayers are between those of the constituent CrN and Si3N4 films at a substrate temperature of 20℃, and are somewhat higher than those of Si3N4 films at a deposition temperature of 500℃. There is no superhardness effect in the Si3N4/CrN multilayers. Based on the experimental results, the hardening mechanisms in the multilayers have been discussed.     

衬底对PZT铁电薄膜显微结构的影响

利用ＸＲＤ和ＳＥＭ观察了在不同衬底材料上用Ｓｏ１－Ｇｅｌ法制备的ＰＺＴ铁电陶瓷薄膜的显微结构。发现ＰＺＴ薄膜的结晶性能受衬底材料的影响极大。ＰＺＴ薄膜在金属铂片上能够很好地结晶，而在单晶硅片上则很难结晶，其在镀铂硅片上的结晶难易程度介于金属铂片与单晶硅片之间。在衬底上制备ＰＴ过渡层可以促进ＰＺＴ薄膜的结晶。     

自韧Si3N4陶瓷的显微结构及其性能研究

利用热压的方法制得室温断裂韧性和抗弯强度分别为１１．２ＭＰａ·ｍ￣（１／２）、８２３ＭＰａ，高温（１３５０℃）断裂韧性和抗弯强度分别为２３．９ＭＰａ·ｍ￣（１／２）、６３０ＭＰａ的自韧Ｓｉ＿３Ｎ＿４陶瓷。研究了显微结构和力学性能之间的关系。结果表明：玻璃相的含量、β－Ｓｉ＿３Ｎ＿４的长径比等对性能有重要影响。分析了自韧Ｓｉ＿３Ｎ＿４陶瓷的增韧机理，通过ＳＥＭ明显观察到Ｓｉ＿３Ｎ＿４中存在裂纹偏转、分支和β－Ｓｉ＿３Ｎ＿４拔出现象。     

ZrO2添加剂对β“—Al2O3性能的影响

研究了氧化锆添加剂对β”－Ａｌ２Ｏ３陶瓷的显微结构和性能的影响。实验结果表明，添加１０％（按体积计）ＺｒＯ２可以大大改善β”－Ａｌ２Ｏ３陶瓷的显微结构，并使其强度有显著提高，与此同时，β”－Ａｌ２Ｏ３的电导率下降不多。     

LaxBa1—xCoO3系导电陶瓷的显微结构与电特性关系的研究

通过Ｘ射线衍射分析和扫描电镜观察，得到了ＬａｘＢａ１－ｘＣｏＯ３系导电陶瓷的显微结构，并发现当Ｘ从０到１变化时，相结构随之发生六方－立多－多相结构变化。在显微结构形态上，呈现出晶粒通道网络，室温电阻率与显微结构之间有明显的对应关系。