太阳能高反射薄膜制备技术对薄膜性能的影响

采用磁过滤阴极真空弧沉积(FCVAD)与磁控溅射(MS)两种技术在玻璃上制备厚度分别为75 nm和165 nm的Glass/Al高反射薄膜,利用Lambda 950分光光度计、扫描电子显微镜、原子力显微镜、附着力测试仪、摩擦试验机和加速老化试验箱分别表征薄膜的反射率、表面形貌、粗糙度、附着力、耐摩擦和耐老化性能,通过薄膜性能评估分析两种技术制备高反射膜性能的差异。结果表明:在双方优化工艺下,FCVAD制备的薄膜表面形貌和附着力优于MS薄膜;FCVAD制备的75 nm和165 nm薄膜反射率比同厚度MS薄膜高出3.3%~4.2%;75 nm厚的薄膜方均根粗糙度明显小于同厚度的MS薄膜;FCVAD制备的75 nm薄膜老化后反射率仅下降1.2%,而MS同厚度薄膜反射率下降了3.3%~4%。说明FCVAD在制备高反射膜方面比磁控溅射更有优势。     

Apatite formation from simulated body fluid on various phases of TiO2 thin films prepared by filtered cathodic vacuum arc deposition

Hydroxyl (OH⁻)-free TiO₂ thin films with amorphous and crystalline phases were deposited onto (100) silicon substrates using filtered cathodic vacuum arc deposition in order to investigate the in vitro apatite formation in simulated body fluid (SBF). The surface morphology, composition and structure of the TiO₂ thin films were characterized. The X-ray photoelectron spectroscopy results confirmed the presence of calcium and phosphorus on all TiO₂ thin film surfaces after immersion in SBF at 37 °C. Fourier transform infra red results showed the presence of carbonated apatite on the surface of these films. Amorphous structured TiO₂ thin film showed poor ability to form apatite on its surface in SBF. Apatite formation was more pronounced on the surfaces of the anatase films in comparison to those of rutile. The carbonated apatite deposition rate increased significantly when the TiO₂ film was illuminated with UV light prior to immersing in the SBF. In particular, the UV-treated anatase and rutile films showed increased rates of carbonated apatite formation on their surfaces in comparison to samples not treated with radiation. The increase in hydrophilicity due to UV treatment appears beneficial for the apatite growth on these surfaces.     

磁过滤阴极弧法制备CrCN薄膜结构与组分研究

目的通过磁过滤阴极弧沉积技术制备质量优异的CrCN涂层。研究乙炔/氮气混合气体流量以及基底偏压对薄膜结构和成分的影响。方法采用磁过滤真空阴极弧沉积技术,在20~100 m L/min变化的乙炔/氮气混合气体流量参数下沉积CrCN复合薄膜。通过X射线衍射、场发射电子显微镜、扫描探针显微镜、X射线光电子能谱仪、透射电镜,对薄膜的物相结构和形貌进行分析。结果随着气体流量的增加,CrCN复合薄膜的晶粒逐渐减小最终向非晶化转变。TEM结果表明,在CrCN复合薄膜中有大量几纳米到十几纳米的纳米晶浸没在非晶成分中。SPM表明,随着基底偏压由–200 V增大到–150 V,CrCN薄膜的表面粗糙度Sa由0.345 nm上升至4.38 nm。XPS、TEM和XRD数据表明,薄膜中Cr元素主要以单质Cr、Cr N以及Cr3C2的形式存在。结论采用磁过滤真空阴极弧沉积技术制备的CrCN复合薄膜具有纳米晶-非晶镶嵌结构。该方法沉积的CrCN薄膜的表面粗糙度与基底负偏压有关。混合气体的流量变化对薄膜组分的变化几乎无影响。