Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma

Silicon nitride (Si₃N₄) films have received great attention not only as dielectric materials for the gate dielectric of transistors and the insulator of capacitors, but also as a buffer layer and etch-stop layer for the semiconductor industry. As the applications of Si₃N₄ film increase, the necessity of investigating a novel deposition process applicable at low temperature has emerged. In this regard, the plasma-enhanced atomic layer deposition (PEALD) technique is attractive as a promising process; however, the Si₃N₄ film deposition process at growth temperatures less than 150?°C using PEALD has not been investigated. In this work, the growth behavior and chemistry of SiN_x (x?<?1.33) film deposited by the PEALD process at various growth temperatures were developed. Insufficient thermal energy from low growth temperature induces an unstable chemical state of deposited film due to the remaining unreacted ligand of adsorbed precursors. This state results in a further chemical reaction to SiO₂ formation by air exposure. Other chemical effects depending on chemical composition and electrical property were also examined in detail.     

Compensation for volatile elements to modify the microstructure and energy storage performance of (W,Ni)-codoped Na0.5Bi0.5TiO3 ceramic films

This work reports the characteristics of nonstoichiometric Na_0.5+xBi_0.5+yTi_0.96W_0.01Ni_0.03O₃ (x?=?0.0%, y?=?1.0%; x?=?0.5%, y?=?2.0%; x?=?1.0%, y?=?4.0%) ceramic films derived from chemical solution deposition and the role played by excess Na/Bi in modifying microstructure and electrical properties. Single perovskite phase structure can be maintained in all compositions. Decreased grain size can be obtained with the increasing compensation for volatile Na/Bi elements. Particularly, extra amounts of 0.5?mol% Na and 2.0?mol% Bi leads to reduced leakage and enhanced ferroelectric polarization. Meanwhile, due to the high breakdown electrical field strength and large difference between maximum and remanent polarization, an excellent energy storage performance can be achieved in Na_0.505Bi_0.52Ti_0.96W_0.01Ni_0.03O₃ sample, which is distinguished by a recoverable energy storage density of 40.5?J/cm³ and an energy storage efficiency of 43.6% at 2515?kV/cm as well as a good frequency stability. Hence, the regulation for the content of volatile elements is effective to modify the electrical response of Na_0.5Bi_0.5TiO₃-based materials.     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

Preparation and characterisation of films from xylose‐glycosylated peanut protein isolate powder

This work aimed at producing and characterising xylose‐glycosylated peanut protein isolate (PPI‐X) films by dissolving PPI‐X powder in water at ambient temperature and further plasticising with glycerol. The effect of powder dissolution temperature (20–100 °C) and glycerol concentration (15.0–45.0%, w/w) on mechanical properties and integrity of these films was quantified. The results showed that the powder dissolution temperature had no significant effect on the mechanical and water resistance properties of PPI‐X films within the temperature range tested. With increasing concentration of glycerol, the tensile strength and water resistance of PPI‐X films decreased and elongation increased. The films produced by dissolving the PPI‐X powder at 20 °C and plasticising with 25.0% glycerol had comparable mechanical properties and better water resistance compared to some other plant protein films plasticising with glycerol. The results suggested that PPI‐X films could potentially be used as biodegradable packaging materials.     

液滴撞击液膜过程气泡卷吸的FTM数值模拟

采用界面追踪法(front tracking method,FTM)对液滴撞击液膜形成的气泡卷吸现象进行直接数值模拟,分析不同无量纲液膜厚度(H*)和不同Bo对卷吸气泡出现时间和消失时间的影响。结果表明:在Bo=4.00时,H*的增加会使得卷吸气泡出现和消失的时间提前,并且在H*0.415时,卷吸气泡不再出现;在H*分别为0.250和0.150时,卷吸气泡不再出现的临界Bo分别为3.58和3.19,但不同的H*对卷吸气泡出现和消失的时间的影响与固定Bo时趋势一致。     

光固化3D打印离型膜在树脂作用下的变形分析

在光固化光敏树脂成型过程中,聚四氟乙烯离型膜会在树脂液位的波动影响下发生变形,进而影响光固化制件的精度,因此需要减小离型膜在制件过程的变形量,确保其相对稳定。首先分析树脂液位变化,通过液位变化量,等效出树脂液波动带给离型膜的载荷,建立离型膜受力模型。然后基于离型薄膜的挠度变形理论,应用Ansys软件进行模拟研究,对不施加预应力和施加不同预应力作用下的离型膜变形结果分析,结果表明施加预应力有利于提高离型膜稳定性,且施加预应力为2. 645M Pa时离型膜受到树脂波动影响最小,位置精度变化在0. 01 mm。     

模具流道环流协同LDPE/HDPE吹塑薄膜结构性能研究

通过新型的旋转芯棒薄膜吹塑设备制备了低密度聚乙烯(LDPE)/高密度聚乙烯(HDPE)复合薄膜,并研究了该设备模具流道环流协同作用对吹塑聚乙烯薄膜结构和性能的影响。结果表明,制备的聚乙烯薄膜呈现一种互锁片晶结构;芯棒转速的提高对聚乙烯薄膜样品的结晶度、片晶厚度也有一定增益作用,使得结晶更完善;聚乙烯薄膜的拉伸性能和撕裂性能随芯棒转速提高都有所提升,尤其是横向力学性能,横向拉伸性能最大提升幅度为25.75%,横向撕裂性能最大提升幅度为27.64%;同时,该技术实现了在不影响聚乙烯薄膜的纵向热收缩率的情况下,大幅提高其横向热收缩率,提升幅度可达128.41%。     

Water film thickness measurement system for oil-water pipe flow

A new technique development for high spatial and temporal resolution film-thickness measurement in oil-water flow is presented in this work. A capacitance measurement system is proposed to measure thin water films or local water fractions near to the pipe wall. The measurement system is based in a planar sensor which is flexible and can be placed close to and following the curvature of the inner wall of the tube. Experimental results of the capacitive technique showed that the system is able to measure film thickness between 400 μm and 2200 μm. Dispersed and core-annular flows were studied in a vertical 12-m-height glass pipe with 50.8 mm of internal diameter, using mineral oil (860 kg/m3 of density and 220 mPa s of viscosity) and tap water. Local time-domain signals and axial and circumferential distributions of water film thickness near to the pipe wall and 3-D images of water film are presented. The measured film thickness, obtained by the proposed technique, was compared with that obtained through a camera-based imaging technique and the agreement was good, with a deviation less than 20%. The new technique allows the observation and characterization of average interfacial topologies in separated flows, and high frequency phenomena related to dispersed flows that occur in liquid-liquid flow near the pipe wall.     

Controlled growth of nanocrystalline aluminum nitride films for full color range

Color films are widely used for visual effect as well as for their functional properties. To date, however, synthesizing thin films with desired color remains challenging. In this work, AlN color films are deposited on Si wafers by precise control of the deposition time for different thickness during reactive magnetron sputtering from an Al target in Ar/N₂ atmosphere. The thickness, morphology, structure, composition and color index are carefully examined by field emission scanning electron microscopy, atomic force microscopy, grazing incidence X-ray diffraction, X-ray photoelectron spectrometry and colorimeter, respectively. As the film thickness changes from 57 nm to 165 nm, the film exhibits purple, indigo, blue, green, yellow, orange and red in color. These colors repeat in the same order when the thickness goes over 165 nm. Once the thickness exceeds 467 nm, overlapping of colors takes place. The mechanisms are elucidated.