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排序方式: 共有837条查询结果,搜索用时 15 毫秒
1.
《真空科学与技术学报》2015,35(1)
采用脉冲激光沉积法在SiO2衬底上制备了CuGa0.8Ge0.2Se2薄膜。采用X射线衍射和X射线能谱仪研究了退火温度对薄膜晶体结构和成分的影响,利用扫描电子显微镜表征了薄膜的表面形貌,采用紫外—可见分光光度计分析了薄膜的光学特性。结果表明,在CuGaSe2中掺杂Ⅳ族元素Ge,光子吸收能量分别为0.65和0.92 e V,禁带宽度为1.57 e V,能够形成中间带。并随着退火温度的升高,CuGa0.8Ge0.2Se2薄膜的光学带隙逐渐减小。 相似文献
2.
Batteries: High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium‐Ion Batteries (Adv. Funct. Mater. 9/2015) 下载免费PDF全文
3.
In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer. 相似文献
4.
An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value (α = 12.8), the lowest breakdown voltage V1mA (V1mA = 15.8 V/mm) and the highest grain boundary barrier ΦB (ΦB = 1.48 eV), which is remarkably superior to the TiO2-V2O5-Y2O3 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2O5-Y2O3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties. 相似文献
5.
Benoît Faugas Thomas Hawkins Courtney Kucera Klaus Bohnert John Ballato 《Journal of the American Ceramic Society》2018,101(9):4340-4349
Optical fibers possessing a crystalline oxide core have significant potential for novel and useful electro‐ or nonlinear‐optic waveguides. Presently, however, their utility suffers from the slow speed and limited cladding materials afforded by conventional crystal‐fiber‐growth techniques. Described herein is the development of single phase bismuth germanium oxide crystalline core fibers using conventional glass fiber drawing. More specifically, fibers were fabricated and evaluated based on 2 embodiments of the molten core method. In a first approach, a Bi4Ge3O12 single crystal was employed as the precursor and sleeved inside a borosilicate glass cladding. In the second approach, additional Bi2O3 was included along with the Bi4Ge3O12 precursor single crystal. Glass clad fibers drawn from the precursor Bi4Ge3O12 single crystal resulted in a polycrystalline core with various crystal morphologies (line‐like, dendrite‐like, and uniform grains) as will be discussed, while fibers drawn from the Bi4Ge3O12 single crystal surrounded by Bi2O3 resulted in a more homogeneous microstructure. The eulytine crystal structure was crystallized using both approaches, with the formation of a secondary crystal phase using the second approach. More particularly, this work aims at showing that single phase and phase pure crystalline oxide core optical fibers can be achieved using conventional glass fiber draw processes, although further optimization is necessary for obtaining single crystalline core fibers. 相似文献
6.
Hao-Tse Hsiao I-Chih Ni Shien-Der Tzeng Wei-Fan Lin Chu-Hsuan Lin 《Nanoscale research letters》2014,9(1):640
Gold nanoparticles (AuNPs) have been deposited on n-type Ge photodetectors to improve the responsivity. Two different coverage ratios, including 10.5 and 30.3% of AuNPs have been prepared, and the fabricated photodetectors are compared with the control sample. The 1,310-nm responsivities at -2 V of the control, 10.5% AuNPs, and 30.3% AuNPs samples are 465, 556, and 623 mA/W, respectively. The AuNPs could increase the responsivities due to the plasmon resonance. The reflectance spectra of these samples have been measured to verify that plasmon resonance contributes to the forward scattering of incident light. The reflectance decreases with AuNP deposition, and a denser coverage results in a smaller reflectance. The smaller reflectance indicates more light could penetrate into the Ge active layer, and it results in a larger responsivity. 相似文献
7.
8.
Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials 下载免费PDF全文
Jonathan M. Skelton Anuradha R. Pallipurath Tae‐Hoon Lee Stephen R. Elliott 《Advanced functional materials》2014,24(46):7291-7300
Phase‐change alloys are the functional materials at the heart of an emerging digital‐storage technology. The GeTe‐Sb2Te3 pseudo‐binary systems, in particular the composition Ge2Sb2Te5 (GST), are one of a handful of materials which meet the unique requirements of a stable amorphous phase, rapid amorphous‐to‐crystalline phase transition, and significant contrasts in optical and electrical properties between material states. The properties of GST can be optimized by doping with p‐block elements, of which Bi has interesting effects on the crystallization kinetics and electrical properties. A comprehensive simulational study of Bi‐doped GST is carried out, looking at trends in behavior and properties as a function of dopant concentration. The results reveal how Bi integrates into the host matrix, and provide insight into its enhancement of the crystallization speed. A straightforward explanation is proposed for the reversal of the charge‐carrier sign beyond a critical doping threshold. The effect of Bi on the optical properties of GST is also investigated. The microscopic insight from this study may assist in the future selection of dopants to optimize the phase‐change properties of GST, and also of other PCMs, and the general methods employed in this work should be applicable to the study of related materials, for example, doped chalcogenide glasses. 相似文献
9.
10.
The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HfTiON/TaON were investigated.The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric,i.e.before or after interlayer (TaON)deposition,or after deposition ofhigh-k dielectric (HfTiON).It was found that the excellent interface quality with an interface-state density of 4.79 × 1011 eV-1cm-2 and low gate leakage current (3.43 × 10-5 A/cm2 at Vg =1 V) could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition.The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds,i.e.more GeOxNy,which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeOx interfacial layer,and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma. 相似文献