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1.
The influence of the microstructure on the corrosion rate of three monolithic SiC samples in FLiNaK salt at 900 °C for 250 h was studied. The SiC samples, labeled as SiC-1, SiC-2, and SiC-3, had corrosion rates of 0.137, 0.020, and 0.043 mg/cm2h, respectively. Compared with grain size and the presence of special grain boundaries (i.e., Σ3), the content of high-angle grain boundaries (HAGBs) appeared to have the strongest influence on the corrosion rate of SiC in FLiNaK salt, since the corrosion rate increased six times as the concentration of high-angle grain boundaries increased from 19 to 32% for SiC-2 and SiC-1, respectively. These results stress the importance of controlling the content of HAGBs during the production process of SiC.  相似文献   
2.
A new aqueous slurry-based laminated object manufacturing process for porous ceramics is proposed: firstly, an organic mesh sheet is pre-paved as a pore-forming template before slurry layer scraping; secondly, the 2D pattern is built with laser outline cutting of the dried mesh–ceramic composite layer; finally, the pore structure is formed after degreasing and sintering. Alumina parts with porosities of 51.5 %, round hole diameters of 80 ± 5 μm were fabricated using 70 wt. % solid content slurry and 100 mesh nylon net. Using an organic mesh as the framework and template not only reduces the risk of damage of the green body but also ensures the regularity, uniformity and connectivity of the micron scaled pore network. The layer-by-layer drying method avoids the delamination phenomenon and improves the paving density. The new method can realize the flexible design of the pore structure by using various organic mesh templates.  相似文献   
3.
Fully dense ceramics with retarded grain growth can be attained effectively at relatively low temperatures using a high-pressure sintering method. However, there is a paucity of in-depth research on the densification mechanism, grain growth process, grain boundary characterization, and residual stress. Using a strong, reliable die made from a carbon-fiber-reinforced carbon (Cf/C) composite for spark plasma sintering, two kinds of commercially pure α-Al2O3 powders, with average particle sizes of 220 nm and 3 μm, were sintered at relatively low temperatures and under high pressures of up to 200 MPa. The sintering densification temperature and the starting threshold temperature of grain growth (Tsg) were determined by the applied pressure and the surface energy relative to grain size, as they were both observed to increase with grain size and to decrease with applied pressure. Densification with limited grain coarsening occurred under an applied pressure of 200 MPa at 1050 °C for the 220 nm Al2O3 powder and 1400 °C for the 3 μm Al2O3 powder. The grain boundary energy, residual stress, and dislocation density of the ceramics sintered under high pressure and low temperature were higher than those of the samples sintered without additional pressure. Plastic deformation occurring at the contact area of the adjacent particles was proved to be the dominant mechanism for sintering under high pressure, and a mathematical model based on the plasticity mechanics and close packing of equal spheres was established. Based on the mathematical model, the predicted relative density of an Al2O3 compact can reach ~80 % via the plastic deformation mechanism, which fits well with experimental observations. The densification kinetics were investigated from the sintering parameters, i.e., the holding temperature, dwell time, and applied pressure. Diffusion, grain boundary sliding, and dislocation motion were assistant mechanisms in the final stage of sintering, as indicated by the stress exponent and the microstructural evolution. During the sintering of the 220 nm alumina at 1125 °C and 100 MPa, the deformation tends to increase defects and vacancies generation, both of which accelerate lattice diffusion and thus enhance grain growth.  相似文献   
4.
Reliable joints of Ti3SiC2 ceramic and TC11 alloy were diffusion bonded with a 50 μm thick Cu interlayer. The typical interfacial structure of the diffusion boned joint, which was dependent on the interdiffusion and chemical reactions between Al, Si and Ti atoms from the base materials and Cu interlayer, was TC11/α-Ti + β-Ti + Ti2Cu + TiCu/Ti5Si4 + TiSiCu/Cu(s, s)/Ti3SiC2. The influence of bonding temperature and time on the interfacial structure and mechanical properties of Ti3SiC2/Cu/TC11 joint was analyzed. With the increase of bonding temperature and time, the joint shear strength was gradually increased due to enhanced atomic diffusion. However, the thickness of Ti5Si4 and TiSiCu layers with high microhardness increased for a long holding time, resulting in the reduction of bonding strength. The maximum shear strength of 251 ± 6 MPa was obtained for the joint diffusion bonded at 850 °C for 60 min, and fracture primarily occurred at the diffusion layer adjacent to the Ti3SiC2 substrate. This work provided an economical and convenient solution for broadening the engineering application of Ti3SiC2 ceramic.  相似文献   
5.
《Ceramics International》2021,47(24):34278-34288
Materials exhibiting colossal dielectric constant are the most sought-after materials due to their variety of applications in various electronics industries. NiFe2O4 and LaFeO3 belonging to the spinel and perovskite structures, respectively, were coupled into a nanocomposite by adapting a one-pot sol-gel synthesis. The ratio of NiFe2O4:LaFeO3 was varied and the synthesized materials were studied for their dielectric behaviors. Interestingly, among the samples studied, the nanocomposite with the ratio of 1:2 of NiFe2O4–LaFeO3 exhibited a high dielectric constant value of 10390 at a frequency of 1 kHz with a several-fold increase in conductivity. The high conductivity resulted in a high dielectric loss. The origin of such a high dielectric constant and loss have been attributed to the Maxwell-Wagner type space charge polarization arising from the microstructure that consists of large and continuous grain boundaries, and the conducting phase at the interface, respectively.  相似文献   
6.
In this study, we report the three-point flexural strength and fracture toughness of monolithic hafnium carbide up to 2000 °C. HfC with different grain sizes was consolidated using the spark plasma sintering method. Coarse-grained monoliths showed a weak dependence on the strain rate during high-temperature tests at 1600 °C–2000 °C. In contrast, results for the ceramics with a grain size below 20 μm indicated a positive dependence of the yield strength vs strain rate. This allowed us to identify the activation energy for high-temperature deformation in flexure as 370 kJ/mol. This level of activation energy is in satisfactory agreement with reports about the diffusion of C in hafnium carbide.  相似文献   
7.
Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics were prepared by the conventional solid-state reaction method. The phase composition, sintering characteristics, microstructure and dielectric properties of Ti4+ replacement by Nb5+ in the formed solid solution Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics were systematically studied. The structural variations and influence of Nb5+ doping in Mg(Ti1-xNbx)O3 were also systematically investigated by X-ray diffraction and Raman spectroscopy, respectively. X-ray diffraction and its Rietveld refinement results confirmed that Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics crystallised into an ilmenite-type with R-3 (148) space group. The replacement of the low valence Ti4+ by the high valence Nb5+ can improve the dielectric properties of Mg(Ti1-xNbx)O3 (x = 0–0.09). This paper also studied the different sintering temperatures for Mg(Ti1-xNbx)O3 (x = 0–0.09) ceramics. The obtained results proved that 1350 °C is the best sintering temperature. The permittivity and Q × f initially increased and then decreased mainly due to the effects of porosity caused by the sintering temperature and the doping amount of Nb2O5, respectively. Furthermore, the increased Q × f is correlated to the increase in Ti–O bond strength as confirmed by Raman spectroscopy, and the electrons generated by the oxygen vacancies will be compensated by Nb5+ to a certain extent to suppress Ti4+ to Ti3+, which was confirmed by XPS. The increase in τf from ?47 ppm/°C to ?40.1 ppm/°C is due to the increment in cell polarisability. Another reason for the increased τf is the reduction in the distortion degree of the [TiO6] octahedral, which was also confirmed by Raman spectroscopy. Mg(Ti0.95Nb0.05)O3 ceramics sintered at 1350 °C for 2 h possessed excellent microwave dielectric properties of εr = 18.12, Q × f = 163618 GHz and τf = ?40.1 ppm/°C.  相似文献   
8.
《Ceramics International》2021,47(21):29722-29729
As semiconductor devices have become miniaturized and highly integrated, interconnection problems such as RC delays, power dissipation, and crosstalk appear. To alleviate these problems, materials with a low dielectric constant should be used for the interlayer dielectric in nanoscale semiconductor devices. Silica aerogel as a porous structure composed of silica and air can be used as the interlayer dielectric material to achieve a very low dielectric constant. However, the problem of its low stiffness needs to be resolved for the endurance required in planarization. The purpose of this study is to discover the geometric effect of the electrical and mechanical properties of silica aerogel. The effects of porosity, the distribution of pores, the number of pores on the dielectric constant, and elastic modulus were analyzed using FEM. The results suggest that the porosity of silica aerogel is the main parameter that determines the dielectric constant and it should be at least 0.76 to have a very low dielectric constant of 1.5. Additionally, while maintaining the porosity of 0.76, the silica aerogel needs to be designed in an ordered open pores structure (OOPS) containing 64 or more pores positioned in a simple cubic lattice point to endure in planarization, which requires an elastic modulus of 8 GPa to prevent delamination.  相似文献   
9.
Increasing the dielectric loss capacity plays an important role in enhancing the electromagnetic absorption performance of materials. It remains a challenge to simultaneously introduce multiple types of dielectric losses in the material. In this work, we show that the atomic and interfacial dipole polarizations can be simultaneously enhanced by substituting N species into both carbon coating layers and bulk TiC lattices of a core-shell TiC@C material. Additionally, substitution of N species results more exposed TiC(111) facets and refines the TiC grain sizes in the bulk material, which is beneficial for enhancing the scattering of the external electromagnetic waves. The maximum reflection loss of the N substituted TiC@C material is measured as ?47.1 dB with an effective absorbing bandwidth of 4.83 GHz at 1.9 mm, which illustrates a valuable way to further tuning the electromagnetic absorption performance of this type of materials.  相似文献   
10.
Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr1-xPrxFe2-yNiyO4 (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr3+ and Ni2+ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 109–1.94 × 109 Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.  相似文献   
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