MOCVD-derived GdYBCO tapes with smooth surface and low Rs based on a new self-heating technology

The metal organic chemical vapor deposition (MOCVD) method was used to prepare GdYBCO films on LaMnO₃/ homo epitaxial-MgO/ ion-beam-assisted-deposition-MgO/ solution-deposition-planarization-Y₂O₃ buffered Hastelloy tapes. By adopting a simple self-heating technique, the substrates were heated by the joule effect after applying a heating current (I_h) through Hastelloy metal tapes. The effects of substrate temperature and (Gd, Y)/Ba ratio (r_c) in the precursor on the biaxial texture, surface morphology and superconducting performance of GdYBCO films were systematically investigated by varying the values of I_h and r_c. Needle-like outgrowths formed on the substrate surface were characterized using a scanning electron microscope, energy dispersive spectrometer and X-ray diffraction system. The results show that a high I_h or r_c leads to the formation of needle-like outgrowths. Therefore, I_h and r_c are crucial process parameters that control the growth of needle-like outgrowths on the surface of GdYBCO films. Three hundred nanometer thick GdYBCO films were prepared at different I_h and r_c by the MOCVD process. At an I_h of 27.0?A and an r_c of 0.6, the surface of the GdYBCO film was very smooth and dense, which can provide a good template for multiple depositions of GdYBCO films. The critical current density of the deposited 300?nm-thick GdYBCO film was 4.4 MA/cm² (77?K, 0?T), which is attributed to good biaxial texture and appropriate film composition. Furthermore, the microwave surface resistance (77?K, 10?GHz) of the GdYBCO film was merely 0.581?mΩ.     

A viable approach to prepare 3C-SiC coatings by thermal MOCVD using commercial grade precursors

A series of 3 C-SiC coatings were prepared by organometallic chemical vapor deposition (MOCVD) using precursor solution containing a varying proportion of commercial-grade hexamethyldisiloxane (HMDSO) and n-hexane. The phase composition, bonding state, and microstructure of 3 C-SiC coatings were studied in detail by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The microstructure and mechanical properties of the optimal 3 C-SiC coating were characterized by scanning transmission electron microscopy (STEM) and nanoindentation, respectively. Our results revealed that the amount of undesired graphite phase can be significantly reduced in the 3 C-SiC coating by introducing hydrogen gas in the reaction chamber alongside increasing the ratio of HMDSO/n-hexane in the precursor mixture. The STEM results revealed that the optimal coating was predominantly composed of nano-crystalline 3 C-SiC grains alongside a small amount of amorphous graphite. The hardness and elastic modulus of the optimal coating were 38.19 GPa and 363.2 GPa, respectively.     

Photocatalytic activity of undoped and sulfur-doped TiO2 films grown by MOCVD for water treatment under visible light

Titanium dioxide ceramic coatings have been used as catalysts in green technologies for water treatment. However, without the presence of a dopant, its photocatalytic activity is limited to the ultraviolet radiation region. The photocatalytic activity and the structural characteristics of undoped and sulfur-doped TiO₂ films grown at 400 °C by metallorganic chemical vapor deposition (MOCVD) were studied. The photocatalytic behavior of the films was evaluated by methyl orange dye degradation under visible light. The results suggested the substitution of Ti⁴⁺ cations by S⁶⁺ ions into TiO₂ structure of the doped samples. SO₄^2? groups were observed on the surface. S-TiO₂ film exhibited good photocatalytic activity under visible light irradiation, and the luminous intensity strongly influences the photocatalytic behavior of the S-TiO₂ films. The results supported the idea that the sulfur-doped TiO₂ films grown by MOCVD may be promising catalysts for water treatment under sunlight or visible light bulbs.     

Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD

Epitaxial indium oxide (In₂O₃) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In₂O₃ film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In₂O₃ (110)|MgO (110) with In₂O₃ [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In₂O₃ films is about 3.55–3.70 eV.     

AlGaN中Mg掺杂对蓝光发光二极管光电性质的影响

采用金属有机化学气相沉积技术生长了GaN基多量子阱(MQW)蓝光发光二极管外延片,并采用高分辨率X射线衍射仪(HRXRD)和光致光谱仪(PL)表征晶体质量和光学性能,其他的光电性能由制成芯片后测试获得,目的是研究外延片p型AlGaN电子阻挡层Mg掺杂的优化条件.结果表明,在生长p型AlGaN电子阻挡层的Cp2Mg流量为300 cm3/min时,蓝光发光二极管获得最小正向电压VF,而且在此掺杂流量下的多量子阱蓝光发光二极管芯片发光强度明显高于其他流量的样品.因此可以通过优化AlGaN电子阻挡层的掺杂浓度,来显著提高多量子阱蓝光发光二极管的电学性能和光学性能.     

980nm垂直腔面发射激光器的外延生长

模拟了垂直腔面发射激光器(VCSEL)的反射谱和量子阱增益谱,采用金属有机物化学气相沉积设备外延生长了980 nm的垂直腔面发射激光器,制作了氧化孔径为14 μm的内腔式氧化限制型VCSEL器件,其阈值电流为3.3mA,阈值电压为1.8V,斜率效率为0.387 W/A,室温直流电流为22.8 mA时,输出光功率为5 mW.     

引入GaN过渡层对Si（111）衬底上生长GaN外延的影响

本文研究了在Si(111)衬底上生长GaN外延层的方法。相比于直接在AlN缓冲层上生长GaN外延层,引入GaN过渡层显著地提高了外延层的晶体质量并降低了外延层的裂纹密度。使用X射线双晶衍射仪、光学显微镜以及在位监测曲线分析了GaN过渡层对外延层的晶体质量以及裂纹密度的影响。实验发现,直接在AlN缓冲层上生长外延层,晶体质量较差, X射线(0002)面半高宽最优值为0.686°,引入GaN过渡层后,通过调整生长条件,控制岛的长大与合并的过程,从而控制三维生长到二维生长过渡的过程,外延层的晶体质量明显提高, (0002)面半高宽降低为0.206°,并且裂纹明显减少。研究结果证明,通过生长合适厚度的GaN过渡层,可以得到高质量、无裂纹的GaN外延层。     

Heteroepitaxial growth of indium phosphide on silicon by MOCVD using adduct source

Abstract

The heteroepitaxial growth of InP on Si by low pressure metalor‐ganic chemical vapor deposition is reported. Trimethylindium‐trimethylphosphine adduct was used as In source in this study. From X‐ray and SEM examinations, good crystallinity InP epilayers with mirror‐like surfaces can be grown directly on (100) and (111) p‐type Si substrates. Carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photo‐luminescence compared with that of InP homoepitaxy shows the good quality of InP/Si epilayers.     

用于制备YBCO薄膜的光辅助MOCVD反应器内流动现象的数值研究

对一种制备YBCO薄膜的光辅助MOCVD反应器内的流动现象进行了三维数值模拟研究.在模拟计算中,分别改变基座与进口的相对角度(Φ)、反应器顶壁倾斜角度(Ψ),得出反应器中流场的相应变化.根据对模拟结果的分析,发现当基座平面与进气口轴线之间的夹角Φ=22.5°及反应器顶壁倾角ψ=30°时,基片表面气流速度大小合适,分布均...     

MOCVD法制备YBCO高温超导体所需前驱盐的制备研究

通过金属有机源化学气相沉积技术(MOCVD)已可制得Ic达280 A/cm,Ic×L为300330 A.m的高性能YBCO带材,表现出巨大的优势和诱人的应用前景。进一步提高前驱盐的挥发性和批次稳定性不但能降低YBCO带材的生产成本、也能提高其性能稳定性。本研究报道了MOCVD法制备YBCO所需β二酮中间体TMHD及其钇、钡、铜金属有机前驱盐的制备,通过红外光谱和核磁共振谱对其化学结构予以确认;同时以金属钡与TMHD在正戊烷或正己烷中制备了无水β-二酮钡盐(Ba[tmhd]2),随后用五乙烯六胺为辅助配体(L)制备了挥发性更好的无水复合配体钡盐(Ba[tmhd]2.L),并通过热重分析技术比较了各前驱盐的挥发性,结果表明:辅助配体五乙烯六胺对提高钡盐挥发性作用显著。