Synthesis of Zn0·1Cd0·9S heterostructure with N-doped graphene quantum dots and graphene for enhancing photoelectric performance in UV–visible light

In the present study, a heterostructure based on Zn_0·1Cd_0·9S, N-doped graphene quantum dots (N-GQDs), and graphene was successfully prepared by a simple method. Various analyses are conducted to determine the structure, morphology, and materials performance of the synthesized composite. The results exhibit that the Zn_0·1Cd_0·9S/N-GQDs/graphene heterostructure presents excellent photoelectric performance with a high photocurrent of 4.43 × 10⁻⁵ A/cm² and 3.43 × 10⁻⁵ A/cm² under light irradiation of 365 nm and 405 nm, respectively. It demonstrates a two-fold photocurrent enhancement in comparison to blank Zn_0·1Cd_0.9S. This remarkable improvement is ascribed to a mechanism in which the N-GQDs act as photosensitizers, enhancing the absorption ability. Concurrently, graphene serves as a carrier mobility substrate, facilitating the separation of the photogenerated electron–hole pairs. The synergetic effect between Zn_0·1Cd_0·9S, the N-GQDs, and graphene enhances the photoelectric performance. The Zn_0·1Cd_0·9S/N-GQDs/graphene heterostructure provides a new route for the enhancement of the photoelectric performance of a semiconductor under UV–visible light.     

The effects of Se/S ratio on the photoelectric properties of nitrogen -doped graphene quantum dots decorated CdSxSe1-x composites

In the work, CdS_xSe_1-x/N-GQDs composites were fabricated via a simple one-step hydrothermal process and their tunable composition, structure and photoelectric properties were characterized by various techniques. The photoelectric properties of CdS_xSe_1-x/N-GQDs could be adjusted by different Se/S ratios and tunable band-gaps. CdS_xSe_1-x/N-GQDs composites reached the optimal photocurrent response and the lowest interfacial impedance at the Se/S ratio of 0.75:0.25. Mott-Schottky plots and LSV spectra showed that the n-type CdS_0.25Se_0.75/N-GQDs presented a higher carrier density under light illumination. The excellent properties of the composites could be attributed to the mechanism involved in the excitation and electron-transfer process. On one hand, the band-gap of CdS_0.25Se_0.75/N-GQDs was narrowed, and more electrons were excited by the lower band-gap energy to promote a superior electron separation and transportation. On the other hand, N-GQDs acted as charge carriers and conductive way providers for electron-transfer instead of electron-hole recombination in the composites.