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排序方式: 共有254条查询结果,搜索用时 0 毫秒
1.
LiNi0.85Co0.10Al0.05O2正极材料合成及表征   总被引:1,自引:0,他引:1  
以LiOH·H2O,Ni2O3,Co2O3和Al(OH)3为原料,采用固相反应法合成Co-Al共掺入LiNiO2的化合物LiNi0.85Co0.10Al0.05O2,由TG-DTA,XRD,SEM,DSC和电化学测试表征材料.结果表明,该材料首次放电容量达186.2mAh/g(3.0 V~4.3 V,18 mA/g),10次循环之后,容量还有180.1 mAh/g,容量保持率为96.7%;与未掺杂的LiNiO2相比,该材料显示出良好的循环性能,且热稳定性也有所提高,是一种很有应用前景的锂离子电池正极材料.  相似文献   
2.
The thermoluminescence (TL) of calcium aluminate persistent luminescence materials doped with Eu2+ and co-doped with R3+ ions were studied between 20 and 325 K. The basic material, CaAl2O4:Eu2+, showed three TL bands between 150 and 300 K in the glow curve. Changing the R3+ co-dopant to the adjacent element in the rare earth series affects significantly the thermoluminescence intensity and even the position of the glow curve maximum. The physical effect seemed to be removing the traps since the La3+, Y3+, and Lu3+ ions suppressed the thermoluminescence. The Pr3+, Ho3+, and Dy3+ co-doping enhanced mainly the low temperature traps and these materials have an intense but relatively short persistent luminescence at room temperature. The Nd3+ and Tm3+ ions enhanced the TL bands close to room temperature and are thus the most suitable co-dopants to induce intense and long persistent luminescence. The quenching of the thermoluminescence by Sm3+ was concluded to be due to the presence of Sm2+ that removes totally the traps.  相似文献   
3.
Samples of LiNi0.95-xCoxAl0.05O2 (x = 0.10 and 0.15) and LiNiO2, synthesized by the solid-state reaction at 725℃ for 24 h from LiOH-H2O, Ni2O3, Co2O3, and AI(OH)3 under an oxygen stream, were characterized by TG-DTA, XRD, SEM, and electrochemical tests. Simultaneous doping of cobalt and aluminum at the Ni-site in LiNiO2 was tried to improve the cathode performance for lithium-ion batteries. The results showed that co-doping (especially, 5 at.% A1 and 10 at.% Co) definitely had a large beneficial effect in increasing the capacity (186.2 mA.h/g of the first discharge capacity for LiNio.s.42OoaoAlo.0502) and cycling behavior (180.1 mA-h/g after 10 cycles for LiNio.85CooaoAlo.osO2) compared with 180.7 mA.h/g of the first discharge capacity and 157.7 mA.h/g of the tenth discharge capacity for LiNiO2, respectively. Differen- tial capacity versus voltage curves showed that the co-doped LiNio.95_xCoxmlo.osO2 had less intensity of the phase transitions than the pristine LiNiO2.  相似文献   
4.
通过溶胶-凝胶法制备铁铕共掺杂的TiO_2(Fe~(3+)-Eu~(3+)/TiO_2)空心微球,采用XRD、TEM、BET和XPS等对样品进行表征,以亚甲基蓝(MB)的光催化降解为目标反应,评价其光催化活性。结果表明:SiO_2微球表面均匀地包覆了1层TiO_2,超声有利于提高SiO_2@TiO_2复合微球间的分散性,同时也发现煅烧前对SiO_2@TiO_2复合微球进行研磨处理后所得的Fe~(3+)-Eu~(3+)/TiO_2空心微球部分塌陷,而未研磨和煅烧后研磨所得Fe~(3+)-Eu~(3+)/TiO_2空心微球完整性较好。XRD和BET分析表明,Fe~(3+)-Eu~(3+)/TiO_2空心微球为锐钛矿且具有良好的介孔结构,铁铕共掺杂在TiO_2空心微球中产生协同作用,使Fe3+-Eu3+/TiO2空心微球的粒径进一步减小,比表面积增大。当Fe~(3+)的掺杂量为1.0%、Eu~(3+)的掺杂量为0.5%时,Fe~(3+)-Eu~(3+)/TiO_2空心微球的光催化活性最高。  相似文献   
5.
以SiC陶瓷靶为靶材,Ar和CHF_3为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率(180W左右)可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar~+的能量以及CHF_3的分解程度,继而影响空间Si、C、-CF、-CF_2,特别是F~*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。  相似文献   
6.
S,Fe共掺杂纳米TiO_2的制备及其光催化性能   总被引:2,自引:0,他引:2  
魏凤玉  祝童 《应用化工》2007,36(5):421-424,431
以水热法制得了S,Fe共掺杂的纳米TiO2光催化剂(TiO2-S-Fe),XRD分析表明,其为锐钛矿晶型,S,Fe掺杂能抑制TiO2粒径的生长;UV-vis漫反射表明,TiO2-S-Fe对可见光吸收增强,吸收带边明显红移;XPS显示S,Fe共掺杂,使得TiO2表面羟基氧含量提高,从而提高催化剂活性;可见光降解甲基橙溶液结果表明,共掺杂样品光催化效果优于单掺样品,S和Fe共掺杂对提高TiO2可见光活性具有协同效应。当Fe3+∶S∶Ti(摩尔比)=0.005∶1∶1,180℃下水热反应3 h时,制得的TiO2-S-Fe可见光催化活性比纯TiO2的活性提高了约10倍。  相似文献   
7.
Er3+/Pr3+ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and X-ray photoelectron spectroscopy. Er3+/Pr3+ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp. ∼550C), RF power (90 W–130 W), and Ar/O2 gas flow ratio at processing pressure of 4 mTorr. Glass thin films could be obtained at the optimized processing condition at 350C, RF power of 130 W, and gas flow of Ar:O2 = 40:0 with maximum deposition rate of 1.6 μm/h. Refractive index and birefringence increased from 1.5614 to 1.5838 and from 0.000154 to 0.000552, respectively, as the content of Pr3+ increased. Binding energy of Pr3d also increased as the content of Pr3+ increased.  相似文献   
8.
A novel lanthanum and sulfur co-doped TiO2 photocatalyst was synthesized by precipitation- dipping method, and characterized by X-ray diffraction(XRD), transmission electron microscopy(TEM) and UV-Vis diffuse reflectance spectroscopy. Compared with the S-doped TiO, La-doped TiO2 and the standard Degussa P25 photocatalysts, the lanthanum and sulfur co-doped TiO2 photocatalyst (the molar percentage of La is 3.0%) calcined at 450 ℃ for 2 h showed the strongest absorption for visible light and highest activities for degradation of reactive blue 19 dye in aqueous solution under visible light(λ〉400 nm) irradiation. It was also discovered that the co-doping of lanthanum and sulfur hindered the aggregation and growth of TiO2 particles, and the doping of lanthanum reduced slightly the phase transition temperature ofTiO2 from anatase to rutile.  相似文献   
9.
关于CaCu3Ti4O12陶瓷的高介电常数机理,目前广泛接受的是非本征的内阻挡层电容模型。该模型认为在多晶中元素变价、缺陷和非化学计量比等导致的半导化晶粒被绝缘晶界层,即内阻挡层所包围。其中内阻挡层的厚度对材料的介电性能影响较大,而扫描电子显微镜(SEM)测试表明样品晶界呈稀烂的果酱状,SEM难以测量晶界区域绝缘内阻挡层厚度。本文采用正电子湮没技术表征其厚度,通过对CaCu3Ti4O12陶瓷共掺不同浓度的Al、Nb(CaCu3Ti4-xAl0.5xNb0.5xO12,x=0.2%、0.5%、5.0%)改变其晶粒和晶界的微观结构,研究CaCu3Ti4O12陶瓷高介电常数机理。正电子湮没结果显示,掺杂样品符合多普勒展宽谱S参数的变化趋势与平均寿命的变化趋势一致。x=0.5%掺杂样品的介电常数最高,其平均寿命、S参数和湮没长寿命成分均最小,阻挡层最薄。实验结果验证了描述CaCu3Ti4O12陶瓷高介电常数机理的内阻挡层电容模型的预测。  相似文献   
10.
采用水热法制备了Ba0.7La0.2Ca0.1TiO3陶瓷材料,研究了MnCO3/MnO2共掺杂对陶瓷材料介电性能的影响及相关的影响规律。随着nMnCO3/nMnO2的增加,材料的介电常数开始增大随后减小,而介电损耗先减小再增大后开始波动,击穿场强先增大后减小。当nMnCO3/nMnO2为3∶1时介电常数最大,得到了介电常数(εr)为4661,介质损耗(tanδ)为0.0165,击穿场强(Eb)为12.58kV/mm,绝缘电阻(R)为3.7×1013Ω的高介电低损耗陶瓷粉体材料。最后探讨了MnCO3/MnO2共掺杂改性的有关机理。  相似文献   
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