LiNi0．85Co0．10Al0．05O2正极材料合成及表征

以LiOH·H2O,Ni2O3,Co2O3和Al(OH)3为原料,采用固相反应法合成Co-Al共掺入LiNiO2的化合物LiNi0.85Co0.10Al0.05O2,由TG-DTA,XRD,SEM,DSC和电化学测试表征材料.结果表明,该材料首次放电容量达186.2mAh/g(3.0 V～4.3 V,18 mA/g),10次循环之后,容量还有180.1 mAh/g,容量保持率为96.7%;与未掺杂的LiNiO2相比,该材料显示出良好的循环性能,且热稳定性也有所提高,是一种很有应用前景的锂离子电池正极材料.     

Low temperature thermoluminescence properties of Eu and R doped CaAl2O4

The thermoluminescence (TL) of calcium aluminate persistent luminescence materials doped with Eu²⁺ and co-doped with R³⁺ ions were studied between 20 and 325 K. The basic material, CaAl₂O₄:Eu²⁺, showed three TL bands between 150 and 300 K in the glow curve. Changing the R³⁺ co-dopant to the adjacent element in the rare earth series affects significantly the thermoluminescence intensity and even the position of the glow curve maximum. The physical effect seemed to be removing the traps since the La³⁺, Y³⁺, and Lu³⁺ ions suppressed the thermoluminescence. The Pr³⁺, Ho³⁺, and Dy³⁺ co-doping enhanced mainly the low temperature traps and these materials have an intense but relatively short persistent luminescence at room temperature. The Nd³⁺ and Tm³⁺ ions enhanced the TL bands close to room temperature and are thus the most suitable co-dopants to induce intense and long persistent luminescence. The quenching of the thermoluminescence by Sm³⁺ was concluded to be due to the presence of Sm²⁺ that removes totally the traps.     

射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理

以SiC陶瓷靶为靶材,Ar和CHF_3为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率(180W左右)可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar~+的能量以及CHF_3的分解程度,继而影响空间Si、C、-CF、-CF_2,特别是F~*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。     

Fabrication of Er3+/Pr3+ Co-doped soda-lime glass thin films using RF magnetron sputtering method and optical property characterization

Er^3+/Pr³⁺ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and X-ray photoelectron spectroscopy. Er³⁺/Pr³⁺ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp. ∼550^∘C), RF power (90 W–130 W), and Ar/O₂ gas flow ratio at processing pressure of 4 mTorr. Glass thin films could be obtained at the optimized processing condition at 350^∘C, RF power of 130 W, and gas flow of Ar:O₂ = 40:0 with maximum deposition rate of 1.6 μm/h. Refractive index and birefringence increased from 1.5614 to 1.5838 and from 0.000154 to 0.000552, respectively, as the content of Pr³⁺ increased. Binding energy of Pr3d also increased as the content of Pr³⁺ increased.     

Photocatalytic activity of lanthanum and sulfur co-doped TiO<Subscript>2</Subscript> photocatalyst under visible light

A novel lanthanum and sulfur co-doped TiO2 photocatalyst was synthesized by precipitation- dipping method, and characterized by X-ray diffraction（XRD）, transmission electron microscopy（TEM） and UV-Vis diffuse reflectance spectroscopy. Compared with the S-doped TiO, La-doped TiO2 and the standard Degussa P25 photocatalysts, the lanthanum and sulfur co-doped TiO2 photocatalyst （the molar percentage of La is 3.0%） calcined at 450 ℃ for 2 h showed the strongest absorption for visible light and highest activities for degradation of reactive blue 19 dye in aqueous solution under visible light（λ〉400 nm） irradiation. It was also discovered that the co-doping of lanthanum and sulfur hindered the aggregation and growth of TiO2 particles, and the doping of lanthanum reduced slightly the phase transition temperature ofTiO2 from anatase to rutile.     

正电子湮没研究Al、Nb共掺CaCu3Ti4O12陶瓷高介电常数机理

关于CaCu₃Ti₄O₁₂陶瓷的高介电常数机理,目前广泛接受的是非本征的内阻挡层电容模型。该模型认为在多晶中元素变价、缺陷和非化学计量比等导致的半导化晶粒被绝缘晶界层,即内阻挡层所包围。其中内阻挡层的厚度对材料的介电性能影响较大,而扫描电子显微镜（SEM）测试表明样品晶界呈稀烂的果酱状,SEM难以测量晶界区域绝缘内阻挡层厚度。本文采用正电子湮没技术表征其厚度,通过对CaCu₃Ti₄O₁₂陶瓷共掺不同浓度的Al、Nb（CaCu₃Ti_4-xAl_0.5xNb_0.5xO₁₂,x=0.2%、0.5%、5.0%）改变其晶粒和晶界的微观结构,研究CaCu₃Ti₄O₁₂陶瓷高介电常数机理。正电子湮没结果显示,掺杂样品符合多普勒展宽谱S参数的变化趋势与平均寿命的变化趋势一致。x=0.5%掺杂样品的介电常数最高,其平均寿命、S参数和湮没长寿命成分均最小,阻挡层最薄。实验结果验证了描述CaCu₃Ti₄O₁₂陶瓷高介电常数机理的内阻挡层电容模型的预测。     

MnCO3/MnO2共掺杂对（Ba,La,Ca）TiO3基陶瓷材料介电性能的影响

采用水热法制备了Ba0.7La0.2Ca0.1TiO3陶瓷材料,研究了MnCO3/MnO2共掺杂对陶瓷材料介电性能的影响及相关的影响规律。随着nMnCO3/nMnO2的增加,材料的介电常数开始增大随后减小,而介电损耗先减小再增大后开始波动,击穿场强先增大后减小。当nMnCO3/nMnO2为3∶1时介电常数最大,得到了介电常数(εr)为4661,介质损耗(tanδ)为0.0165,击穿场强(Eb)为12.58kV/mm,绝缘电阻(R)为3.7×1013Ω的高介电低损耗陶瓷粉体材料。最后探讨了MnCO3/MnO2共掺杂改性的有关机理。     

Zn-Mn共掺对BTO薄膜光学性质及铁电性能的影响

利用溶胶凝胶法在Si(100)和LNO/Si(100)衬底上成功制备了Zn-Mn共掺钛酸钡薄膜.为了更充分地研究掺杂量对薄膜的晶体微结构和铁电性的影响,利用同样的方法分别制备了不同掺杂量的掺Zn和掺Mn钛酸钡薄膜.X射线衍射和原子力显微镜测量的结果表明薄膜均匀致密,且平均晶粒尺寸在30 nm以内.通过比较400～700 nm范围内各钛酸钡薄膜的折射率和消光系数,可以得到,其禁带宽度随着掺Zn或掺Mn量的变化而变化.对薄膜的铁电性能进行研究表明,Zn-Mn钛酸钡具有良好的铁电性,其剩余极化值为11.26μC/cm2,说明微量的Zn-Mn共掺可以增强薄膜的铁电性.     

硼，氮共掺碳纳米管的第一性原理研究

小管径单壁碳纳米管因为曲率效应和局部效应的影响,有着不同的电学性能。传统的密度泛函计算并不能完全处理这些影响因素,但是杂化泛函计算却可以。我们通过HSE杂化泛函计算研究了（2,3）碳纳米管共掺杂不同浓度的氮,硼原子,发现了能隙和一些其他性质均随着掺杂成分的改变而发生振荡变化。我们的研究阐明了对小管径纳米管性质的认识。这对设计新型纳米电子设备有潜在作用。     

p型ZnO薄膜制备的研究进展

ZnO是一种性能优异的"低温蓝光工程"宽带隙Ⅱ-Ⅵ族半导体材料,但因本征施主缺陷和施主杂质引起的自补偿效应等使ZnO很难有效地实现n型向p型导电的转变。为此,阐述了ZnO薄膜的p型掺杂机理,介绍了国内外研究者在抑制自补偿、提高受主掺杂元素固溶度及寻求合适的受主掺杂元素等方面p型ZnO薄膜的最新研究进展。研究表明:增加ZnO材料中N原子固溶度的各种办法如施主-受主共掺杂、超声雾化气相淀积及本征ZnO薄膜在NH3气氛下后退火等和选择IB族中的Ag为受主掺杂元素是实现ZnO薄膜p型导电的有效措施。期望通过本综述能为国内ZnO基器件应用的p型ZnO薄膜的制备提供新思路。