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Xiumin Yao Yong Yang Xuejian Liu Zhengren Huang 《Journal of the European Ceramic Society》2013,33(15-16):2909-2914
Silicon carbide reticulated porous ceramics (SiC RPCs) were fabricated by polymer sponge replica technique, followed by recoating with SiC slurries of two different sintering additives of MgO–Al2O3–SiO2 (Slurry 1) and polycarbosilane (Slurry 2). The sintering temperature of SiC RPCs recoated with Slurry 2 was 1100 °C, which was 200 °C lower than that for one recoated with Slurry 1. The prepared SiC RPCs exhibited homogeneous microstructure and contained pores with different sizes which was entrapped in the strut of SiC RPCs, small pores with diameter lower than 4 μm and large pores with diameter higher than 10 μm. Bending strength of SiC RPCs recoated with Slurry 1 was two times higher than that for the non-recoated samples, which was 1.88 MPa and was a little higher than that for one recoated with slurry 2. At the same time, high thermal shock resistance and high refractoriness were achieved for SiC RPCs recoated with Slurry 2. 相似文献
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为提高活塞式无扰动涂层工艺的涂层质量,针对高分辨率激光快速成形系统涂层工艺中存在的涂层厚度随制件高度增加而变厚的问题,提出在制作过程中动态优化刮刀速度的涂层方法。研究刮刀速度、制件高度对涂层厚度的影响。采用面响应法,建立涂层厚度误差关于制件高度及刮刀速度的数学模型。根据该模型,在制作过程中随制件高度的变化,动态优化刮刀速度,实现涂层厚度均匀化。验证试验结果表明:与普通涂层工艺相比,新型涂层工艺将涂层厚度偏差由27 μm降为6.9 μm,解决了涂层厚度随制件高度增加而变厚的问题,实现涂层厚度的均匀化,提高堆积方向的制作精度。该涂层工艺也可应用于普通光固化激光快速成形系统中,解决制作陷阱结构时涂层厚度随制件高度变厚问题,因此该工艺对于光固化快速成形技术中提高堆积方向制作精度具有重要意义。 相似文献
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