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P-type Sn1-xCuxSe (x = 0–0.03) polycrystal was prepared through melting synthesis and high pressure (6.0 GPa) sintering (HPS) method. The composition and microstructure of the samples was analyzed, and the thermoelectric transport properties were investigated in the temperature range of 303 K–823 K. The results indicate that the electrical conductivity increases as Cu content increases. An observable improvement is found for the Seebeck coefficient when x is 0.01. In addition, the total thermal conductivities (κtot) of all samples decrease with rising temperature, and reach its minimum values at 773 K. As a result, the maximum power factor (PF) and ZTmax value are 378 μW m−1 K−2 and 0.79 for Sn0.97Cu0.03Se at 823 K, respectively.  相似文献   
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采用电子束蒸镀预制层,再对预制层进行硒化的两步法工艺,通过调节硒化温度和退火时间,在玻璃基底上成功制备了SnSe薄膜。利用X射线衍射、拉曼光谱、扫描电子显微镜、紫外可见近红外分光光度计等研究了SnSe薄膜的物相、微观形貌和光学性能。结果表明,在450℃下硒化退火60min可制备出纯相的多晶SnSe薄膜,其带隙为0.93eV。在功率为200mW/cm2的980nm激光照射下,对SnSe薄膜进行了光电响应特性测试,通过曲线模拟得出所制薄膜的响应时间和恢复时间分别为62和80ms。  相似文献   
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In this study, SnSe nanostructures prepared by the precipitation method were exposed to the irradiation of ultrasound waves at different powers and ultraviolet (UV) rays. The results of structural analyses revealed the formation of SnSe nanostructure phases and the presence of Sn and Se, respectively. The structural properties, including stress and strain, were calculated for all main peaks obtained from the XRD analysis conformed to the orthorhombic phase. The FESEM images demonstrated that they were narrow-size nanorods alongside agglomeration particles dispersed in all samples. PL results illustrated changes in the ultrasonic power, UV, and simultaneous irradiation of these waves led to the shift of emission bands and intensities. The absorption spectra were measured in the range of 200–1100 nm, indicating that they were shifted into higher wavelengths. Additionally, energy band gap (Eg) changes showed that their Eg was in the range of ~ 1.30 eV. I-V characteristics results demonstrated that increase of ultrasonic power, UV, and ultrasound irradiation resulted in the enhancement of responsivity and sensitivity. Furthermore, they had detectivity in the range of 12–122 × 107 (Jones). Moreover, the irradiation of ultrasound and UV rays had a considerable impact on mobility and carrier concentration.  相似文献   
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硒化锡材料因为其优良的ZT性能,有巨大的热发电应用潜力。此文我们详细地对比了单晶和多晶硒化锡在热力学和电性能输运方面的差异。其中,单晶样品是通过布里奇曼法合成的,多晶样品是通过熔融、粉碎和SPS烧结合成的。热电性能的测量则是通过四探针法和激光闪射法完成的。我们发现单晶样品的功率因子是多晶的2倍,而热导率也是多晶样品的3倍左右,这就直接导致了单晶和多晶的最高ZT值差异不大。单晶硒化锡在823 K处取得最高ZT 为0.65,而多晶则是在923K 取得最高ZT为0.5. 这些发现可以为系统地探索硒化锡材料的热电应用提供坚实的基础。  相似文献   
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P‐type polycrystalline SnSe and K0.01Sn0.99Se are prepared by combining mechanical alloying (MA) and spark plasma sintering (SPS). The highest ZT of ≈0.65 is obtained at 773 K for undoped SnSe by optimizing the MA time. To enhance the electrical transport properties of SnSe, K is selected as an effective dopant. It is found that the maximal power factor can be enhanced significantly from ≈280 μW m?1 K?2 for undoped SnSe to ≈350 μW m?1 K?2 for K‐doped SnSe. It is also observed that the thermal conductivity of polycrystalline SnSe can be enhanced if the SnSe powders are slightly oxidized. Surprisingly, after K doping, the absence of Sn oxides at grain boundaries and the presence of coherent nanoprecipitates in the SnSe matrix contribute to an impressively low lattice thermal conductivity of ≈0.20 W m?1 K?1 at 773 K along the sample section perpendicular to pressing direction of SPS. This extremely low lattice thermal conductivity coupled with the enhanced power factor results in a record high ZT of ≈1.1 at 773 K along this direction in polycrystalline SnSe.  相似文献   
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Large SnSe single crystals of high metallurgical quality have been grown by a closed tube vapor phase technique. Hall measurements on annealed and quenched samples were performed to establish the stability range of the compound. The crystals are p-type with hole concentrations between 3 × 1015 and 2 × 1018 cm−3 and mobilities up to 7 × 103 cm /Vs at 77 K.  相似文献   
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崔岩  乔吉祥  赵洋  邰凯平  万晔 《功能材料》2021,(4):4012-4017
因为晶体结构以及热电性能各向异性,硒化锡(SnSe)沿b轴方向表现出优异的热电性能,受到业内的广泛关注。但关于SnSe薄膜研究的报道较少。本研究利用磁控溅射技术,将SnSe沉积到Si/SiO2基底得到SnSe薄膜,分析了沉积温度对SnSe薄膜结构和热电性能的影响。结果显示:沉积温度升高,晶粒尺寸相应增加,薄膜的结晶质量也随之提高。在573 K的沉积温度条件下,能获得高结晶质量和良好化学计量比的(111)取向SnSe薄膜,该薄膜具有约为1.25μW/(cm·K2)的最大功率因子(PF)。当沉积温度升高至773 K时,可以得到具有超高迁移率和赛贝克系数的(400)织构SnSe薄膜,该薄膜在573 K的测试温度下,其最大PF为0.5μW/(cm·K2),实现接近于文献报道的相同温度下单晶SnSe沿a轴的PF。本研究的结果证明了高沉积温度对SnSe薄膜微观结构和热电性能调控的重要性,并且为通过设计和调控SnSe基薄膜有序结构来提升其热电性能提供了新的研究思路。  相似文献   
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