A scalable architecture for geometric correction of multi-projector display systems

Multi-projector displays allow the realization of large and immersive projection environments by allowing the tiling of projections from multiple projectors. Such tiled displays require real time geometrical warping of the content that is being projected from each projector. This geometrical warping is a computationally intensive operation and is typically applied using high-end graphics processing units (GPUs) that are able to process a defined number of projector channels. Furthermore, this limits the applicability of such multi-projector display systems only to the content that is being generated using desktop based systems. In this paper we propose a platform independent FPGA based scalable hardware architecture for geometric correction of projected content that allows addition of each projector channel at a fractional increase in logic area. The proposed scheme provides real time correction of HD quality video streams and thus enables the use of this technology for embedded and standalone devices.     

Producing fully-lamellar microstructure for wrought beta-gamma TiAl alloys without single α-phase field

Fine-grained fully-lamellar (FL) microstructure is desired for TiAl components to serve as compressor/turbine blades and turbocharger turbine wheels. This study deals with the process and phase transformation to produce FL microstructure for Mo stabilized beta-gamma TiAl alloys without single α-phase field. Unlike the α + γ two-phased TiAl or beta-gamma TiAl with single α-phase field, the wrought multi-phase TiAl–4/6Nb–2Mo–B/Y alloys exhibit special annealing process to obtain FL microstructure. Short-term annealing at temperatures slightly above β-transus is recommended to produce the desired FL microstructure. The related mechanism is to guarantee the sufficient diffusion homogenization of β stabilizers during single β-phase annealing, and further avoid α decomposition by α → γ + β when cooling through α + β + γ phase field. The colony boundary β phase contributes to fine-grained nearly FL microstructure, by retarding the coarsening of the α phase grains.     

Reducing numerical dissipation in smoke simulation

Numerical dissipation acts as artificial viscosity to make smoke viscous. Reducing numerical dissipation is able to recover visual details smeared out by the numerical dissipation. Great efforts have been devoted to suppress the numerical dissipation in smoke simulation in the past few years. In this paper we investigate methods of combating the numerical dissipation. We describe visual consequences of the numerical dissipation and explore sources that introduce the numerical dissipation into course of smoke simulation. Methods are investigated from various aspects including grid variation, high-order advection, sub-grid compensation, invariant conservation, and particle-based improvement, followed by discussion and comparison in terms of visual quality, computational overhead, ease of implementation, adaptivity, and scalability, which leads to their different applicability to various application scenarios.     

2.4GHz动态CMOS分频器的设计

对现阶段的主流高速CMOS分频器进行分析和比较,在此基础上设计一种采用TSPC(truesingle phase clock)和E-TSPC(extended TSPC)技术的前置双模分频器电路.该分频器大大提高了工作频率,采用0.6μm CMOS工艺参数进行仿真的结果表明,在5V电源电压下,最高频率达到3GHz,功耗仅为8mW.     

一种估算单桩经济直径的方法

在滩海油田开发过程中,经常需要设立立管桩,在环境荷载的作用下,立管桩顶部会发生位移,较大的位移对立管及栈桥的安全很不利,因此需要合理确定单桩的直径。埕岛油田在确定单桩直径时引入了经济直径的概念,文章对经济直径的原理进行了分析,给出了桩顶位移和桩径经济指数计算公式,并举例进行了计算,得出了桩径与桩顶位移及桩径经济指数的关系曲线, 进而求得经济桩径的取值范围。文章还对该方法的优缺点进行了分析。     

用于高频谐振器的PbTiO_3基压电陶瓷

传统的PZT压电陶瓷的相对介电常数较大,一般为1 000以上,用于高频谐振器不易与线路匹配;而PbTiO3基压电陶瓷的相对介电常数较小,一般仅为200左右,对于10 MHz以上频率的谐振器,用PbTiO3基压电陶瓷作为压电振子是最佳的选择。本文主要研究用于高频谐振器的MnO2和Nd2O3改性PbTiO3基压电陶瓷的性质。PbTiO3基压电陶瓷的性质的改善是与此种陶瓷的制备工艺,显微结构和电导机制紧密相关的。     

醇镁还原法一步制取对氯苯胺的研究

醇镁还原法一步制取对氯苯胺是一种新的方法 ,研究发现最佳反应温度为 80℃～ 85℃ ,反应时间为4h ,对氯硝基苯与镁粉的用量 (物质的量比 )为 1∶3,产率为 80 %。     

激光熔覆Ni基SiC合金涂层组织与性能的研究

利用5kWCO2连续波激光器在16Mn钢基材表面对含20%(体积比)SiC陶瓷粉末的镍基自熔性合金粉末进行激光熔覆得到Ni基SiC合金涂层(NiSiC)。研究了合金涂层的组织形貌及相结构,并用单纯的镍基合金涂层(Ni60)进行了显微硬度及滑动磨损性能的对比试验。结果表明,NiSiC合金涂层由γ枝晶及其间的共晶组织组成,主要组成相为γ-Ni,γ-(Ni,Fe)固溶体和(Cr,Fe)7C3,Cr23C6及(Cr,Si)3Ni3Si等化合物。添加SiC的镍基合金涂层NiSiC比单纯的镍基合金涂层Ni60具有较高的硬度和耐磨性。     

编码解码芯片HD3-6408-9及其应用

编码解码芯片HD3 64 0 8 9是一种高性能的CMOS器件。这种大规模芯片主要由编码器和解码器两部分组成。在数据传输应用中 ,采用两个独立的单片机系统 ,利用编码解码芯片 (HD3 64 0 8 9)组成数字信号的接收、发送及显示部分来完成数据传输功能     

Immobilization and activation of vanadium(III) and titanium(III) single‐site catalysts for ethylene polymerization using MgCl2‐based supports

Significant increases in the activity of vanadium(III) amidinate catalysts for ethylene polymerization have been obtained by immobilization on a MgCl₂‐based support prepared by reaction of AlEt₃ with a MgCl₂/ethanol adduct. Catalyst immobilization and activation on this type of support prevents the rapid decay in activity observed under homogeneous polymerization conditions with unsupported catalysts. Stable polymerization activity is also observed with analogous titanium(III) complexes. Polyethylene with narrow molecular weight distribution and spherical particle morphology is obtained without reactor fouling. Copyright © 2005 Society of Chemical Industry