Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

钙钛矿型ScRh3X（X=B，C，N）的第一性原理研究

利用第一性原理研究了钙钛矿型的ScRh3X（X=B,C,N）及其固溶体的结构、弹性、电子性质等。研究结果表明,对于平衡状态下的ScRh3BxC1-x（0〈x〈1）固溶体,其结构参数和已知的实验数据相一致,和ScRh3C结构相比,在0〈x〈1的范围内,固溶体ScRh3BxC1-x的体积弹性模量和弹性常数C44随着价电子浓度的增加增大,而剪切模量却表现出单调下降的趋势。本文根据计算得到的电子结构信息对这些现象进行了分析,发现剪切模量比体积弹性模量或C44能更好的预测该体系的硬度。     

Defect formation and its effect on the thermodynamic properties of Pu2Zr2O7 pyrochlore: a first-principles study

In the past decades, pyrochlores, such as Gd₂Zr₂O₇, have demonstrated great potential to immobilize nuclear wastes such as Pu, which results in the production of Pu₂Zr₂O₇. Due to the high radioactivity of Pu, it is difficult to investigate the radiation response behavior of Pu₂Zr₂O₇ and its physical properties of the damaged state experimentally. Consequently, few related data have been reported in the literature thus far. In this study, first-principles calculations have been carried out to investigate the defect formation and its effect on the thermodynamic properties of Pu₂Zr₂O₇. It reveals that Pu_Zr antisite and O_8a interstitial defects are very easy to form in Pu₂Zr₂O₇. In particular, the O_8a interstitial defect can be formed spontaneously, while it is mechanically unstable. When vacancy, interstitial or antisite defects are formed in Pu₂Zr₂O₇, and the elastic moduli and Debye temperature are decreased. Besides, better ductility is resulted. As compared with other zirconate pyrochlores, such as Gd₂Zr₂O₇, the Pu₂Zr₂O₇ is suggested to be less resistant to radiation-induced amorphization. This study demonstrates that the created defects due to self-radiation from actinide decay have remarkable influences on the thermophysical properties of Pu₂Zr₂O₇.     

Theoretical study on composition-dependent properties of ZnO·nAl2O3 spinels. Part II: Mechanical and thermophysical

Knowledge on the mechanical and thermophysical properties of ZnO·nAl₂O₃ is essential for practical applications. Based on the first-principles calculations and the bond valence method, the disordered spinel-type structure of ZnO·nAl₂O₃ (n = 1–4) was constructed to investigate the composition-dependent mechanical and thermophysical properties. The effects of cation substitution on the hardness, elastic modulus, thermal expansion, and thermal conductivity were revealed from the insights into the chemical bonds. At a higher n, the tetrahedral bond is stronger, manifested as its higher hardness and bulk modulus as well as smaller thermal expansion coefficient. Meanwhile, the octahedral bond is weaker, leading to the lower hardness and bulk modulus, along with the larger expansion coefficient. In consequence, the hardness and elastic moduli of ZnO·nAl₂O₃ are improved moderately while the expansion coefficient is decreased with the rise of n. Due to the different vibration characteristics of Zn^IV and Al^IV, the cation disorder in the 8a site provides the primary source of phonon scattering, resulting in the dramatic reduction of thermal conductivity as n increases. The understanding offers guidance on the application-oriented design of new oxide spinels.     

InAs基范德华异质结界面电荷转移特性第一性原理计算的研究进展

由低维InAs材料和其他二维层状材料堆叠而成的垂直范德华异质结构在纳米电子、光电子和量子信息等新兴领域中应用广泛。探索跨结界面的电荷转移机制对于全面理解该类器件的非凡特性至关重要。第一性原理计算在揭示界面电荷转移特性与各种能量稳定型InAs基范德华异质结的电、光、磁等原理物理特性和器件性能变化之间的内在关系方面发挥着不可比拟的作用。文中梳理、总结和探讨了近年来InAs基范德华异质结间界面电荷转移特性的理论研究工作与潜在的功能应用,提出在理论方法和计算精度方面大力发展第一性原理计算的几个途径,为更好地开展InAs基范德华异质结的基础科学研究和应用器件设计提供可借鉴的量化研究基础。     

Ni掺杂CdS电子结构和光学性质的第一性原理计算

采用基于密度泛函理论框架下的第一性原理计算方法,对纤锌矿结构CdS和CdS∶Ni几何结构、能带结构、电子态密度和光学性质进行了系统的研究。计算结果表明,Ni原子掺入CdS后晶格常量均减小,晶格发生局部畸变;Ni的掺杂在费米面附近引入杂质能级,极大地提高了CdS系统的导电性。光学性质的计算结果显示,掺杂导致在可见光区域出现了强度微弱的新吸收峰。所有结果表明,Ni掺杂CdS体系是极具潜力的透明导电材料。     

Structure stability and configuration evolution of Al_n(n=3, 4, 6, 13, 19) clusters

As a special phase in the process of transformation from atoms or molecules to bulk materials, a cluster represents an original state of a condensed matter. For studies on structures and properties of clusters it is a basic problem to investigate how atoms or molecules form clusters and what changes will take place during the configuration evolu- tion of clusters. Recently Aln clusters attract many researchers’ attention because of its simple electronic structures and unique conductive charac…     

Li+嵌Al反应的热力学分析及实验研究

利用第一原理赝势平面波方法计算了Al-Li合金中3种平衡相AlLi、Al2Li3和Al4Li9的形成焓,得出AlLi相的形成焓最低,表明当Li 嵌入Al电极时,优先形成AlLi相。为了验证上述结论,将Al薄片与金属锂对电极组成扣式电池,对Al电极进行电化学性能测试和结构表征。实验结果与理论计算的结果相吻合,表明可以采用第一原理赝势平面波方法预测铝作锂离子电池负极时的电化学反应性能。     

GO/Ti基复合材料界面性质的第一性原理研究

目的 研究氧化石墨烯在继承石墨烯优异性能的同时,是否会因为官能团的存在而影响复合材料界面的结合方式,抑制脆性相TiC的产生,解决石墨烯作为增强体时易发生界面反应从而影响材料塑韧性的问题。方法 根据(0001)Ti∥(0001)GO、 ∥ 界面位向关系,建立了Ti/氧化石墨烯/Ti共格界面模型。采用第一性原理计算方法从电子原子尺度研究了环氧基和羟基对Ti/氧化石墨烯/Ti界面黏附功、界面能、原子结构和电子结构的影响。结果 环氧基和羟基都会使界面黏附功变大,界面能减小,形成结合更强、更稳定的界面,其中环氧基的贡献更大。官能团附近的Ti原子与氧化石墨烯中C原子的结合能力减弱。在形成界面时,氧化石墨烯被还原,环氧基和羟基中的O原子与Ti基体会发生反应生成固溶体,羟基中的H原子可能保持与O原子之间的相互作用,也可能会脱离O原子的束缚与Ti基体有相互作用。结论 当氧化石墨烯和Ti基体形成界面时,氧化石墨烯的官能团会固溶在Ti基体中,抑制界面产物脆性相TiC的产生,石墨烯的片层结构更容易被保留,形成界面结合更好的复合材料。     

基于第一性原理计算的纳米氧化钨研究进展

纳米氧化钨作为一种具有独特物理化学性质的半导体功能材料,已被广泛应用于环境、能源、生命科学、信息技术等领域。本文基于第一性原理计算在纳米氧化钨中的应用进展,概述了量子力学基础上的第一性原理及密度泛函理论的发展历程及基本理论,介绍了该领域常用的MS (Materials studio)、VASP (Vienna ab initio simulation package)等模拟计算软件,并分类阐述了第一性原理计算对氧化钨的微观电子结构、物质相互作用、分子热动力学等方面的研究成果。最后提出了第一性原理计算在纳米氧化钨这类半导体材料研究中存在的问题及未来发展趋势。