晶体锗切削温度场的理论建模及数值模拟

针对晶体锗切削加工过程,首先采用热源法及温度叠加原理建立了切削温度场的理论数学模型。然后运用MATLAB软件分别计算出切削速度分别为1.5、2.0、2.5m/s,进给量分别为0.02、0.025mm/r时工件在剪切变形区的温度场,分析了不同切削速度、不同进给量下的温度变化。最后,采用DEFORM-3D软件进行三维切削仿真分析,获得了不同切削参数下工件温度场的云图。计算结果与仿真结果表明:切削速度与进给量的增大会导致切削温度的升高,刀具与工件开始接触时,切削温度、进给量与时间呈线性急剧增加,但温度升高到一定值后会保持相对稳定。相同增量下,进给量对切削温度的影响大于切削速度。不同切削速度和进给量下的仿真结果与理论计算结果误差均小于10%。     

二氧化锗离心过滤工艺研究

采用离心分离工艺对Ge Cl4水解生成的二氧化锗进行过滤实验,分析了各工艺参数对Ge O2直收率、Ge O2滤饼含水量与含氯量的影响规律。通过研究得到最优工艺参数组合:离心机滤布孔径为2.6μm,脱水转速为1200 r/min,滤饼厚度为80~100 mm,单次洗涤洗液量为20 L,洗涤循环次数为3~5次。结果表明:Ge O2直收率可达到99.62%,制备的Ge O2滤饼含水量小于8%,含氯量小于0.05%,此样品再经过干燥则可以达到国标规定的Ge O2-06产品要求。     

非对称面电极硅基锗金属-半导体-金属光电探测器的设计

针对金属-半导体-金属(MSM)光电探测器暗电流抑制的机理,本文提出了一种具有非对称面电极结构的硅基锗MSM光电探测器的设计方法,利用ATLAS仿真软件分析了电极结构参数对暗电流的影响,并通过实验得出样品器件的暗电流降低至微安量级。实验结果表明,采用非对称面电极结构设计可以有效抑制硅基锗MSM光电探测器的暗电流,提高器件性能。     

In‐situ Observations of Nanoscale Effects in Germanium Nanowire Growth with Ternary Eutectic Alloys

Vapour‐liquid‐solid (VLS) techniques are popular routes for the scalable synthesis of semiconductor nanowires. In this article, in‐situ electron microscopy is used to correlate the equilibrium content of ternary (Au_0.75Ag_0.25–Ge and Au_0.65Ag_0.35–Ge) metastable alloys with the kinetics, thermodynamics and diameter of Ge nanowires grown via a VLS mechanism. The shape and geometry of the heterogeneous interfaces between the liquid eutectic and solid Ge nanowires varies as a function of nanowire diameter and eutectic alloy composition. The behaviour of the faceted heterogeneous liquid–solid interface correlates with the growth kinetics of the nanowires, where the main growth facet at the solid nanowire–liquid catalyst drop contact line lengthens for faster nanowire growth kinetics. Pronounced diameter dependent growth kinetics, as inferred from liquid–solid interfacial behaviour, is apparent for the synthesised nanowires. Direct in‐situ microscopy observations facilitates the comparison between the nanowire growth behaviour from ternary (Au–Ag–Ge) and binary (Au–Ge) eutectic systems.     

基于划刻实验的单晶锗材料去除机理研究

采用Cube压头对单晶锗进行变载与恒载纳米划刻实验, 利用扫描电子显微镜和原子力显微镜对已加工表面进行观测, 根据表面形貌将划刻过程分为延性域、脆塑转变域及脆性域三种, 对各个阶段的表面成型及材料去除方式进行了研究。使用最小二乘法对不同阶段划刻力进行非线性拟合, 并利用相关系数检验拟合函数可靠性, 结果表明划刻力与划刻深度存在强相关性。同时分析了单晶锗的弹性回复率随划刻距离的变化趋势, 结果表明工件的弹性回复率将从纯弹性阶段的1逐步回落至0.76左右。基于脆塑转变临界载荷, 以裂纹萌生位置作为脆塑转变标志, 首次结合工件已加工表面弹性回复, 提出一种适用于计算单晶锗的脆塑转变临界深度模型, 其脆塑转变临界深度为489 nm。     

氯化蒸馏残渣回收锗工艺研究

氯化蒸馏残渣中的锗在氢氧化钠浓度432g/L、液固比41、85℃浸出2h的条件下,锗浸出率可达99.21%,硅浸出率可达99.98%。浸出液通过离子交换方式进行分离锗和硅,然后进行沉锗和沉硅处理,锗的综合回收率可达99%。     

Fast,Scalable Synthesis of Micronized Ge3N4@C with a High Tap Density for Excellent Lithium Storage

Nanostructuring has significantly contributed to alleviating the huge volume expansion problem of the Ge anodes. However, the practical use of nanostructured Ge anodes has been hindered due to several problems including a low tap density, poor scalability, and severe side reactions. Therefore, micrometer-sized Ge is desirable for practical use of Ge-based anode materials. Here, micronized Ge₃N₄ with a high tap density of 1.1 mg cm⁻² has been successfully developed via a scalable wet oxidation and a subsequent nitridation process of commercially available micrometer-sized Ge as the starting material. The micronized Ge₃N₄ shows much-suppressed volume expansion compared to micrometer-sized Ge. After the carbon coating process, a thin carbon layer (≈3 nm) is uniformly coated on the micronized Ge₃N₄, which significantly improves electrical conductivity. As a result, micronized Ge₃N₄@C shows high reversible capacity of 924 mAh g⁻¹ (2.1 mAh cm⁻²) with high mass loading of 3.5 mg cm⁻² and retains 91% of initial capacity after 300 cycles at a rate of 0.5 C. Additionally, the effectiveness of Ge₃N₄@C as practical anodes is comprehensively demonstrated for the full cell, showing stable cycle retention and especially excellent rate capability, retaining 47% of its initial capacity at 0.2 C for 12 min discharge/charge condition.     

富硒锗酵母对延边黄牛肉贮藏品质影响

以延边黄牛公牛为研究对象,考察硒锗酵母对牛外脊和臀肉的硒、锗元素沉积量及牛肉品质的影响。结果表明:富硒锗酵母可以提高黄牛肉中硒、锗元素在肉中的沉积量,随着富硒锗酵母添加量的增加,延边黄牛肉中硒、锗元素的沉积量也增加,贮藏期间的亮度值、pH、TVB-N、滴水损失值呈下降趋势;红色度值呈上升趋势。