基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Characteristic Features of the Optimal Processing of the Results of Measurements in the Case of a Random Observation Function

An analysis is made of the characteristic features and problems of the optimal processing of the results of measurements in the case of a random observation function utilizing a nonlinear Kalman filter. A method is proposed for increasing the convergence domain of the filter with additional processing of measurements in the frequency domain.     

大朝山水电站地下洞室安全监测资料分析

大朝山水电站引水发电系统为地下工程，根据各项安全监测物理量的主要观测成果，对最大观测值分析其对工程的安全影响，为保证其安全运行具有重要意义。为此，分别对大朝山水电站的主要地下建筑物，包括压力引水隧洞、地下厂房、尾水调压室的最大观测值进行了分析研究，并提出了一些建议，有较大的参考价值。     

气体绝缘封闭电器的高速瞬变过程和现场试验

随着ＧＩＳ的工作电压不断提高和发展，一系列新的现象和问题也同时出现。从国外一些科研，设计，制造部门所研究发表的内容看，大致有隔离开关操作和高速瞬变过程，粒子影响和对干扰定位的技术，元件的监督，现场试验等课题，本文对以上问题加以综合介绍。     

东方红浆砌石重力坝扬压力安全评价

东方红水库大坝是一座运行近40a的浆砌石重力坝，坝体裂缝、坝体渗漏及坝体碳化严重，扬压力有逐年增高的趋势。本文利用坝基扬压力测压管水位观测资料建立了测压管水位的统计模型，并结合现场渗漏实测流量资料建立了渗流反分析模型，详细分析了坝基的渗流性态和扬压力状态，并对其渗流性态做出安全评价。     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

野外观测系统的检验与校正

在地震资料处理中常常发现野外观测系统不准,其后果极为严重。为了避免重复施工,改善处理效果,笔者在IBM3081系统上编制了利用初至波对野外观测系统进行检验和校正的程序。文中介绍了两种校正方法:其一是只作炮检距校正。根据工区的小折射、井口时间、反射记录等资料提供一条或几条比较准确的初至时距曲线,作为标准曲线,然后将从实际共炮点道集中拾取的初至曲线与标准初至时距曲线相比较,确定出实际初至曲线所对应的炮检距,并对各个地震道的空间属性进行修改。对某三维工区的处理结果表明,该方法的效果良好。其二是先用迭代方法加误差约束条件计算炮点和检波点的坐标,然后计算炮检距,再进行校正。这种校正处理的效果也是明显的。但实验表明,对于观测系统误差较大的数据,不宜作坐标计算,只作炮检距校正尚可完成部分校正。处理中要根据数据的性质选取校正方法。     

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

In-situ doped polycrystalline Si_xGe_1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH₂Cl₂, GeH₄ and B₂H₆ in a H₂ carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C and different B₂H₆ flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible effect of B₂H₆ flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole. Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates and higher B₂H₆ flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved during the deposition process. The results indicate that polycrystalline Si_xGe_1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon.     

Color changes in cyanosis and the significance of congenital dichromasy and lighting

There are anecdotal reports of color vision deficient medical practitioners (particularly deuteranopes) having difficulty in recognizing cyanosis. An understanding of the color changes in oxygenated blood has led to a better understanding of the lighting needs for hospitals. Using the same database, this article investigates the propensity for color vision deficient observers to make mistakes with cyanotic patients. The possibilities for helping the observer with appropriate color of lighting are considered. The spectral reflectances of blood at varying oxygenation levels previously reported were used 7 ; 8 to calculate chromaticity and lightness. The direction of the chromaticity change was compared with the protanopic and deuteranopic confusion lines. An attempt was made to identify sources that enhanced color changes for the color deficient. The color change of blood oxygenation is closely aligned with the confusion lines of congenital dichromats (particularly protanopia) showing the potential for difficulty in making this decision. No source could be demonstrated to solve the problem or even reduce it significantly. © 2007 Wiley Periodicals, Inc. Col Res Appl, 32, 428–432, 2007