Low threshold voltage,highly stable electroforming-free threshold switching characteristics in VOx films-based device

Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (V_th) and low stability still restricts their potential applications. Herein, the vanadium oxide (VO_x) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VO_x/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow V_th (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO₂ and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.     

Additive manufacturing,quasi-static and dynamic compressive behaviours of ceramic lattice structures

Ceramic lattice structures (CLSs) are used for construction in common and extreme environments because of the extraordinary properties of ceramics. In this study, we designed and additively manufactured CLSs with distinct structural parameters to explore their quasi-static and dynamic compressive behaviours in detail. It was demonstrated that both the relative density (?ρ) and inclination angle (ω) had a significant impact on the quasi-static and dynamic mechanical properties of the CLSs. Furthermore, the mathematical relationships between the quasi-static compressive properties, including quasi-static compressive strength (QS), quasi-static Young’s modulus (QY), and quasi-static energy absorption (QE), versus ?ρ and ω obeyed the Gibson–Ashby and Deshpande and Fleck models, respectively. It was revealed by experiment and simulation that as the stiffness increased, the quasi-static failure mode of the CLSs changed from a parallel-vertical-inclined mixed mode to a parallel-vertical mode. In addition, the relationship between the dynamic mechanical properties of the CLSs versus ?ρ and ω also followed the Gibson–Ashby and Deshpande and Fleck models. The exceptional dynamic increase factor indicated that CLSs are highly suitable for extreme environments. These findings will aid in the research and development of customised additively manufactured CLSs.     

Magnetic field-enhanced photocatalytic nitrogen fixation over defect-rich ferroelectric Bi2WO6

Photocatalytic N₂ fixation is a promising and sustainable manufacturing process of ammonia (NH₃); however, the NH₃ production rate by this method is very low, thus severely restricting further application of this sustainable technology. Therefore, developing an efficient photocatalyst for N₂ fixation under mild conditions is urgently required. Herein, ferroelectric Bi₂WO₆ materials with different surface oxygen defects were prepared, and the concentration of corresponding defects was controlled by adjusting the thermal reduction time. The abundant oxygen defects in Bi₂WO₆ can provide more reactive sites to promote the effective adsorption of N₂, and the photogenerated charge carrier can be efficiently separated benefiting from the internal electric field. These would weaken the N₂ triple bond and reduce the activation energy barrier for the conversion of N₂ to NH₃ under mild conditions. In the absence of sacrificial agents and cocatalysts, the optimized Bi₂WO₆ with oxygen defects shows an indigenous NH₃ yield of 132.175 μmol·g^-1·L^-1·h^-1, which is more than two times higher than that of the original Bi₂WO₆. Surprisingly, the Bi₂WO₆ with oxygen defects produced more than eight times NH₃ (471.13 μmol·g^-1·L^-1·h^-1) than that of the original Bi₂WO₆ when assisted by an external magnetic field, thus providing a new perspective for further enhancing the N₂ fixation performance.     

Oxygen vacancy-induced short-range ordering as a sole mechanism for enhanced magnetism of spinel ZnFe2O4 prepared via a one-step treatment

Despite being difficult to identify, extremely dilute oxygen vacancies have been widely reported to play an important role in enhancing magnetism in ZnFe₂O₄. The mechanisms underlying this enhanced magnetism have not been well understood for a long time and remain controversial because the formation of oxygen vacancy-rich ZnFe₂O₄ can be accompanied by changes in the chemical/physical characteristics, especially the composition, particle size, surface morphology and cation distribution, which can significantly affect the magnetization. An open and important question is whether and to what extent the enhanced magnetization can be attributed only to oxygen vacancies. In this study, the relationship between the magnetization and oxygen vacancies in ZnFe₂O₄ was definitively determined by using a carefully designed “shake-and-heat” treatment to prepare vacancy-rich samples while keeping the other crystal/surface parameters constant. Compared to the nearly vacancy-free paramagnetism samples, the vacancy-rich samples exhibited a higher magnetization of approximately 5 emu/g at both 300 K and 2 K. The Fe³⁺-O^2--Fe³⁺ superexchange paths broken by oxygen vacancies then resulting in the Fe³⁺-Fe³⁺ ferromagnetism configuration. Meanwhile, the oxygen vacancy is highly diluted then the ferromagnetism configuration is confined in a single super-cell, favoring a short-range magnetic ordering at room temperature. The concentration of oxygen vacancies was calculated to be 0.68% by magnetization measurement. Our results may shed a light on how oxygen vacancies affect magnetism.     

Defect engineering of ZnO: Review on oxygen and zinc vacancies

ZnO is an important material which has been widely applied in photodetector, catalyst, gas sensor, field emitter, etc. Yet, its inability to absorb visible light, poor charge transport, and low conductivity limit the application of these devices. Recently, it was discovered that introduction of defects such as oxygen and zinc vacancies into ZnO can effectively improve the existing properties or lead to new and unexpected yet highly desirable characteristics. Herein, we present a systematic review on the available approaches to synthesize oxygen- and/or zinc-deficient ZnO with emphasis on their chemical, structural, and electrical particularities. Furthermore, applications of defective ZnO in various nanoscale devices are discussed in terms of their functionality, reliability, and performance. Finally, we summarize major challenges and offer perspectives for further research in this field. We hope that this review would make a valuable contribution to broaden the knowledge of defective ZnO.     

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

LBM investigation of a Cu-water nanofluid over various configurations of pipes in the mixed convection flow

Increasing the heat capacity of heat exchangers is a crucial need for modern devices. The thermal conductivity of the usual fluids and the Nusselt (Nu) number of flows containing such fluids are two bottlenecks in the way of increasing heat delivery in the heat exchangers. For this reason, nanofluids have been introduced. The effect of utilizing a Cu-water nanofluid as a coolant of two hot pipes in a square cavity is investigated numerically with a two-component lattice Boltzmann method. The volume fraction of nanoparticles is assumed to be constant (0.03) while the Richardson (Ri) number varies from 0.02 to 20. Results show that the effectiveness of nanoparticles is better observed in the natural convection mode. However, sedimentation is also very probable at high Ri numbers, which significantly reduces the effectiveness of the nanoparticles. Configurations which produce a natural convection stream similar to the forced convection one as well as the configurations with high spacing and hence, low heat stream interactions, are the best choices for a uniform heat rate from the pipes.     

Contributions of oxygen vacancies to the hydrogen evolution catalytic activity of tungsten oxides

The tungsten trioxide attracts less attention due to the low electron transfer kinetics that hinders the interaction of electrons and ions during the hydrogen evolution reaction (HER). But the oxygen vacancy strategy can inspire its electrocatalytic activity for HER because it has a positive effect on improving the charge transfer and compensating for the weak hydrogen adsorption of the tungsten trioxide. By synthesizing a series of substoichiometric tungsten oxides, we reveal the linear relationship between the catalytic activity and the content of oxygen vacancies, which indicates that the oxygen vacancy strategy is an achievable route to enhance the HER for metal oxides.     

Enhanced photocatalytic activity of nonstoichiometric crystalline TaO2F and Ta2O5 with carbon coating

Pure and carbon-coated tantalum-based oxides photocatalysts were synthesized via the mesocrystalline precursor transformation method by annealing pure and polydopamine-coated (NH₄)₂Ta₂O₃F₆ mesocrystals in Ar. The oxygen-poor atmosphere thermal annealing process assisted the formation of nonstoichiometric TaO₂F mesocrystals with more F and Ta₂O₅ nanorods with oxygen vacancies and the associated lower valence state Ta ions (Ta⁴⁺). Furthermore, the carbon coating, decomposed from coated polydopamine, helped to control their particle size within 100 nm by isolating the connection of (NH₄)₂Ta₂O₃F₆ subunits. Hence, as-synthesized products, particularly carbon-coated Ta₂O₅ nanosheets, owning large surface area (67.6 m² g^?1), fine particle size (<100 nm), excellent electronic conductivity, decreased bandgap energy, enhanced and extended absorption in the visible range, exhibited preferable photocatalytic activity in the photodegradation of methylene blue, reaching a 76.54 % and 41.71 % removal under ultraviolet and visible light illumination, suggesting a promising candidate for wide-range responsive photocatalytic applications.     

Evaluation of bismuth doped La2-xBixNiO4+δ (x = 0, 0.02 and 0.04) as cathode materials for solid oxide fuel cells

Bismuth doped La_2-xBi_xNiO_4+δ (x = 0, 0.02 and 0.04) oxides are investigated as SOFC cathodes. The effects of Bi doping on the phase structure, thermal expansion, electrical conduction behavior as well as electrochemical performance are studied. All the samples exist as a tetragonal Ruddlesden-Popper structure. Bi-doped LBNO-0.02 and LBNO-0.04 have good chemical and thermal compatibility with LSGM electrolyte. The average TEC over 20–900°С was 13.4 × 10^?6 and 14.2 × 10^?6 K^?1 for LBNO-0.02 and LBNO-0.04, respectively. The electrical conductivity was decreasing with the rise of Bi doping content. EIS measurement indicates Bi doping can decrease the ASR values. At 750 °C, the obtained ASR for LBNO-0.04 is 0.18 Ωcm², which is 56% lower than that of the sample without Bi doping, suggesting Bi doping is beneficial to the electrochemical catalytic activity of LBNO cathodes.