Structural regulation and polishing performance of dendritic mesoporous silica (D-mSiO2) supported with samarium-doped cerium oxide composites

Ceria (CeO₂) particles are prevalent polishing abrasive materials. Trivalent lanthanide ions are the popular category of dopants for enriched surface defects and thus improved physicochemical properties, since they are highly compatible with CeO₂ lattices. Herein, a series of dendritic-like mesoporous silica (D-mSiO₂)-supported samarium (Sm)-doped CeO₂ nanocrystals were synthesized via a facile chemical precipitation method. The relation of the structural characteristics and chemical mechanical polishing (CMP) performances were investigated to explore the effect of Sm-doping amounts on the D-mSiO₂/Sm_xCe_1?xO_2?δ (x = 0–1) composite abrasives. The involved low-modulus D-mSiO₂ cores aimed to eliminate surface scratch and damage, resulting from the optimized contact behavior between abrasives and surfaces. The trivalent cerium (Ce³⁺) and oxygen vacancy (V_O) at CeO₂ surfaces were expected to be reactive sites for the material removal process over SiO₂ films. The optimal oxide-CMP performances in terms of removal efficiency and surface quality were achieved by the 40% Sm-doped composite abrasives. It might be attributed to the high Ce³⁺ and V_O concentrations and the enhancement of tribochemical reactivity between CeO₂SiO₂ interfaces. Furthermore, the relationship between the surface chemistry, polishing performance as well as the actual role in oxide-CMP of the D-mSiO₂/Sm_xCe_1?xO_2?δ abrasives were also discussed.     

单晶SiC的电助光催化抛光及去除机理

为满足电子半导体等领域对SiC超光滑、无损伤和材料高效去除的要求，提出了电助光催化抛光SiC的新方法。研究了光催化剂种类及其pH值对抛光液氧化性和抛光效果的影响，讨论了材料的去除机理。结果表明：以p25型TiO2为光催化剂配制抛光液所获得的最大氧化还原电位为633.11 mV，材料去除率为1.18 μm/h，表面粗糙度Ra=0.218 nm；抛光后SiC表面氧化产物中，Si-C-O、Si-O和Si4C4O4的含量明显增加，SiC表面被氧化并被机械去除是主要的材料去除方式。     

Highly efficient chemical mechanical polishing method for SiC substrates using enhanced slurry containing bubbles of ozone gas

In this study, a highly efficient method for chemical mechanical polishing (CMP) of silicon carbide (SiC) substrates using enhanced slurry was proposed and developed. The enhanced slurry contains bubbles of ozone gas generated by ozone gas generator in pure water mixed with a conventional commercially available slurry. Therefore, the enhanced slurry has an oxidizing effect on the Si-face of SiC substrates. To confirm the effectiveness of bubbles enclosing ozone gas, both nano-indentation test and X-ray photoelectron spectroscopy (XPS) analysis were conducted. As a result, the hardness decrease of the Si-face of the SiC substrate was confirmed through the nano-indentation test, and the generation of reaction products was confirmed on Si-face of SiC substrate in the XPS analysis. According to a series of experimental results of our proposed highly efficient CMP method for SiC substrates, the removal rate can be increased when the enhanced slurry was applied, comparing with that for the not only conventional commercially available slurry but also commercially available dedicated slurry.     

Effect of interfacial friction force on material removal in full aperture continuous polishing process

Full aperture continuous polishing using pitch lap is a key process of finishing large flat optical workpiece. The friction force of the workpiece and pitch lap interface significantly affects material removal. In this work, the friction force was determined by a measurement system that uses force transducers to support the workpiece. Experimental and theoretical analyses have been carried out to investigate the evolution of friction force with polishing time and its effect on material removal. Our results show that the friction coefficient of the workpiece/lap interface decreases during polishing, which is due to surface smoothing of the viscoelastic pitch lap by loading conditioner. In addition, the spatial average and uniformity of material removal rate (removal coefficient) increases with the increase of friction coefficient, which is due to rough lap surface, provides more sharp asperities to charge the polishing particles.     

圆柱滚子外圆精密加工技术综述

圆柱滚子外圆精密加工技术作为圆柱滚子制造流程的终加工手段，对保证圆柱滚子的形状精度、尺寸精度、表面质量及其一致性起到关键作用。目前，依据加工原理不同，圆柱滚子加工方法主要分为无心磨削和无心超精研的工业主流传统加工方法，以及定心往复超精研、电化学机械光整、磁流体研磨、双平面方式超精研抛等非传统加工方法。介绍了上述不同加工方法的基本加工原理和研究现状，在加工精度、表面质量、生产效率等方面讨论了各加工方法的优缺点；展望了圆柱滚子外圆精密加工技术未来的发展方向，包括超精密工件和设备、高效自动化生产、高柔性生产、微小型零件、复合工艺、智能装备等。     

环烷基NiFe2O4磁流体的制备及有磁场沉降稳定性

目前，磁流体的制备方法多为化学共沉淀法，关于磁流体微乳化制备工艺及有磁场沉降稳定性的研究较少。采用单因素和均匀实验设计方法，判定分散剂及其质量分数对环烷基NiFe₂O₄磁流体沉降稳定性的影响。本文采用微乳化法制备环烷基NiFe₂O₄磁流体，通过样品沉降系数和黏度特性，研究分散剂种类与其质量分数、NiFe₂O₄纳米磁性颗粒质量分数、乳化剂种类及温度对磁流体有磁场沉降稳定性的影响，得到制备环烷基NiFe₂O₄磁流体的较佳参数值。研究结果表明：当十二烷基苯磺酸钠（SDBS）、十二烷基硫酸钠（SDS）与油酸（OA）的质量分数在1%～6%范围内，环烷基NiFe₂O₄磁流体的沉降稳定性较好，并且SDBS与OA的含量对其稳定性的影响大于SDS；当分散剂定量时，随着NiFe₂O₄纳米磁性颗粒质量分数的增加，磁流体先表现出较好的稳定性，后逐渐出现团聚；在一定温度时，乳化剂Surf CA20有利于磁流体内部形成液晶相，减小液珠间吸引势能并且降低磁性颗粒的聚结速度，提高磁流体的有磁场沉降稳定性。     

镍钛合金心血管支架电解抛光流场仿真及试验研究

针对不同转速对电解抛光镍钛合金心血管支架流场分布的影响特点,利用ANSYS软件对电解抛光心血管支架过程中电解液的流速分布进行了仿真,分析了电解液速度场及涡流场对电解抛光心血管支架去除机理的影响规律,并通过试验验证了其仿真结果的正确性。结果表明：随着转速的增加,速度场分布均匀,涡流变化小,电解液更新及时,电解产物可及时排出,加工精度提高,抛光后的心血管支架表面完整性好；但当转速过高时,涡流分布区域明显增大,较多气体析出,导致速度场分布不均匀且不连续,加工精度低,抛光后的心血管支架表面完整性差。     

光学球罩数控抛光工艺关键技术研究

光学球罩被广泛应用于各类光电系统中,其面形精度制约着光电系统的成像质量。随着数控技术的发展,数控加工技术逐渐成为目前光学加工行业的主流发展方向。基于高质量的铣磨表面,为了能够在准球心高速抛光工艺中实现等去除量加工,本文对同步抛光技术进行了理论分析及数学模型推导,并通过实验证明,同步抛光技术可以有效地提升加工效率,获得高质量的光学表面。     

Process parameter dependencies of continuous and pulsed laser modes on surface polishing of additive manufactured aluminium AlSi10Mg parts

Laser powder bed fusion is a well-established 3D printing technique for metal alloys, but exhibits a poor surface quality. Laser polishing provides the possibility of a fast contact-free and fully-automatable surface treatment. This paper deals with the experimental investigation of laser polishing of laser powder bed fusion parts made of aluminium AlSi10Mg. Laser polishing is done with a 4 kW solid state disc laser in combination with a multi-axis system and a one dimensional scanner optic. The laser is operated at continuous and pulsed operation mode. The parameter study reveals a high dependency of the achievable roughness on the laser beam intensity, the track and pulse overlap, the energy density and the number of polishing passes and polishing directions. Pulsed laser polishing mode with up to four passes from different directions revealed the lowest surface roughness of 0.14 μm Ra. With respect to the initial average surface roughness of Ra = 8.03 μm a reduction of the surface roughness of greater than 98 % could be achieved. Polishing with continuous laser radiation at one polishing pass resulted in Ra = 0.23 μm at an area rate of 20 cm²/min. Laser polishing using four passes achieved a further improvement up to Ra = 0.14 μm.