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1.
通过对地杂波O.94μm激光后向反射率的测试,获取不同入射角的多背景后向反射率测试数据。通过对测试数据的分析处理提供特征信息,为激光探浏器设计提供依据。 相似文献
2.
Dario Pasini Luigi Garlaschelli Elza Bontempi Laura E. Depero 《Fullerenes, Nanotubes and Carbon Nanostructures》2007,15(5):367-378
The synthesis of a series of polymers and cyclopolymers bearing crown ethers of differing structure and affinities towards primary ammonium ions is discussed. These polymers have been tested in their efficiency to form structurally homogeneous thin films when blended with an amphiphilic C60 compound containing a primary ammonium ion functional group. The X-ray reflectivity characterization of the films revealed that the polymer bearing the crown ether with the least affinity for primary ammonium ions, but having the highest degree of polymerization, is the most effective in forming structurally homogeneous thin films. 相似文献
3.
A. P. Litvinchuk C. Thomsen M. Cardona L. Börjesson M. Käll P. Berastegui L. -G. Johansson 《Journal of Superconductivity》1994,7(1):113-116
We report a reflectivity study of thez-polarized TO-phonons of Pr
x
Y1–x
Ba2Cu4O8 and YBa2–y
Sr
y
Cu4O8 alloys in the temperature range 10–300 K. Anomalies of the frequency and linewidth of the plane-oxygen vibration at300 cm–1 due to the opening of the superconducting gap are found to occur upon crossing the superconducting transition temperatureT
c
. Phonon self-energy effects are strongly dependent onT
c
, providing evidence for a relative shift of the gap with respect to the energy of phonon.On leave from the Institute for Semiconductor Physics, Ukrainian Academy of Sciences, 252650 Kiev-28, Ukraine. 相似文献
4.
本文基于光束传播法(beam propagation method, BPM)和时域有限差分法(finite difference time domain method, FDTD)建立了分析模型,模拟并分析了弯曲脊形波导超辐射发光二极管(superluminescent light emitting diode, SLD)不同结构参数(刻蚀深度、曲率半径、脊形宽度)对波导损耗的影响和倾斜脊形波导不同结构参数(刻蚀深度、脊形宽度、倾斜角度、发射波长)对模式反射率的影响。计算表明,弯曲脊形波导的刻蚀深度和曲率半径是影响波导损耗的重要因素。刻蚀深度较浅使波导对光场的限制作用较弱,过小的曲率半径会使模式传输泄露严重,损耗大大增加。脊形宽度越大,波导损耗越小,其对波导损耗影响较小。脊形波导的端面倾斜角度是抑制模式反射率的重要因素,脊形宽度增加,模式反射率逐渐减小,并在特定的几个角度形成的奇点达到最小值。刻蚀深度对于模式反射率的影响作用较小,但随着刻蚀深度的增加,奇点发生的角度产生了向小角度偏移。在特定的倾斜角度范围内,随着波长减小,奇点的数目会逐渐增加。研究结果可对设计具有优越性能的SLD器件... 相似文献
5.
Zheng Zeng Yunhe Liu Guangyou Liu Jinlan Yang Mingyang Yang Guowei Zou Zong Qin Xidu Wang Shaozhi Deng Bo-Ru Yang 《Journal of the Society for Information Display》2023,31(10):587-598
Electronic paper (e-paper) is a reflective display technology with unique advantages, such as bistability, low-power consumption, and high ambient contrast ratio. These features make e-paper a promising candidate for future Internet of Things applications. Among different technologies of e-paper, electrophoretic display (EPD) is the most successful one for commercialization. However, the edge ghosting (also known as the fringing effect) still limits the performance of EPD. Herein, we established a model of particle dynamics of electrophoresis, simulated the edge ghosting of microcapsule EPD, analyzed the edge ghosting effect, and revealed the relationship between thicknesses, dielectric constants of the back binder layer, and the edge ghosting. Two EPD panels with different thicknesses of back binder layer were demonstrated, which verifies the accuracy of this simulation model. With the proposed model, many device mechanisms and product issues can be analyzed and illustrated, which is supposed to guide the researchers in optimizing the device structure design of EPD. 相似文献
6.
7.
利用Na2CO3/NaHCO3的混合溶液,以Na2SiO3作为添加剂,对单晶硅表面进行了各向异性腐蚀,研究了溶液中NaHCO3的含量、腐蚀时间和温度以及加入Na2SiO3量对绒面的影响.结果表明,硅片在含有10%Na2CO3/5%NaHCO3/5%Na2SiO3的腐蚀液中于90℃恒温腐蚀25min可制备出均匀的具有金字塔结构的减反射绒面;通过将织构液置于密封的环境下,可以增强小尺寸金字塔的均匀分布;腐蚀液中加入硅酸钠可以减小金字塔尺寸,降低表面反射率. 相似文献
8.
采用溶胶—凝胶(sol—gel)法制备掺钛SnO2薄膜,通过制备过程中变化不同质量分数的钛掺杂来制备3种不同质量分数(5%,10%,15%)的掺钛SnO2薄膜。在常温下对膜片在丙酮、甲烷气氛中进行气敏光学特性测试。结果表明:掺钛SnO2薄膜在常温下对不同的测试气体具有不同的反应,并且薄膜的灵敏度与掺杂量有关;质量分数为5%钛掺杂SnO2薄膜在丙酮气氛下的灵敏度在1300~2500 nm波长范围保持在13%左右,而质量分数为15%钛掺杂SnO2薄膜在甲烷气氛下的灵敏度在1700~2300 nm范围内保持在7%左右。 相似文献
9.
This article describes a systematic study of the nature of interfaces involved in a Nb layer deposited on Si (Nb-on-Si) and Si layer deposited on Nb (Si-on-Nb) bilayer films by using a UHV electron beam evaporation technique, having individual layer thickness of 35 and 100 Å each. By using Grazing angle X-ray reflectivity and adopting a proper modelling technique the electron density profile (EDP) as a function of depth has been determined in the samples. EDP determined in as-deposited 35 Å Nb and 35 Å Si bilayer films show that the width of Si-on-Nb and Nb-on-Si interfaces are 20 Å and 40 Å, respectively. The difference observed in the width of two interfaces is attributed to the different growth morphology of 35 Å Nb and 35 Å Si single-layer films as revealed by atomic force microscopy (AFM) investigations. EDP determined from measured XRR data for 100 Å Nb and 100 Å Si deposited bilayer film shows that the width of Si-on-Nb interface is 10 Å. This observed width is smaller than the similar interface in the case of samples having an individual layer thickness of 35 Å. The corresponding interface width of Nb-on-Si is found to be 45 Å and marginally more than the similar interface in the case of the 35 Å Nb/35 Å Si bilayer samples. AFM studies carried out on 100 Å Nb and Si layers deposited separately on float glass substrate indicate similar gross as well as subtle morphological features and cannot be attributed to the observed asymmetry in this case. The observed asymmetry in EDP of two interfaces in this case is due to the enhanced diffusion of Si into the formed metal layer relative to the diffusion into the already deposited metal layer. 相似文献
10.