手机面板用蓝宝石玻璃性质与制备

蓝宝石具有硬度高、耐磨性、化学稳定性和耐热性好等特点,手机制造企业将蓝宝石用于代替玻璃作手机面板的覆盖材料。本文阐述了蓝宝石的结构、性质和大尺寸蓝宝石的制造方法,指出热交換法可以制备Φ380 mm的蓝宝石,冷心放肩微量提拉法(SAPMAC)也是一种有特色的制备方法。最后提出由蓝宝石和玻璃组成叠层材料,上层用耐磨的蓝宝石,下层为玻璃,可以节约成本,这将是手机面板发展的方向。     

冲击压缩载荷下蓝宝石的动态力学性能试验方法（下）

文章对目前氧化铝陶瓷动态力学性能的研究现状进行了相关的介绍,同时采用霍普金森压杆技术对单晶α氧化铝（蓝宝石）的动态力学性能进行了简单的试验,得到其应力-应变曲线,蓝宝石是一种硬脆材料,受到冲击压缩载荷的作用,会有一定的塑性;进而对试验数据进行相关处理,得到蓝宝石的弹性模量以及高应变率下蓝宝石的抗压强度和失效应变。     

石墨烯纳米片对AgCuTi钎料熔点与润湿性的影响

采用球磨法在AgCuTi钎料中添加不同质量分数的石墨烯纳米片(GNSs)制备出复合钎料,利用差示扫描量热仪(DSC),SEM以及XRD等方法研究了微量的石墨烯纳米片对AgCuTi钎料微观形貌、熔点以及在蓝宝石表面润湿性的影响. 结果表明,球磨法对GNSs-AgCuTi复合钎料的物相没有影响,石墨烯均匀地分散在AgCuTi颗粒周围;复合钎料熔点随着石墨烯含量的增加而降低,当石墨烯含量为0.5%,熔点降低了3.2 ℃;微量的石墨烯,改善钎料在蓝宝石表面的润湿性,0.3%GNSs-AgCuTi复合钎料的润湿角减小了4.4°,铺展面积增加了10 mm2,而过多的石墨烯也使得复合钎料的润湿性变差;石墨烯与元素Ti反应生成TiC,复合钎料与蓝宝石界面反应产物为Ti₃Cu₃O相.     

LED蓝宝石衬底研磨工艺研究

为改善蓝宝石加工工艺,通过金刚石研磨液研磨LED蓝宝石衬底试验,研究了此过程中的工艺参数(研磨盘材质、研磨压力、研磨盘转速等)对材料去除速率和表面粗糙度值Ra的影响。试验结果显示:研磨盘材质以铜质为佳,其最优工艺参数组合为研磨压力20.68kPa、研磨盘转速80r/min。     

金刚石覆镍量对固着磨料研磨蓝宝石性能的影响

金刚石磨粒表面镀镍可以增强其与树脂的结合力。通过化学镀的方法在金刚石磨粒表面镀覆一层不同包覆率的Ni-P合金层,并制成了固结磨料研磨垫。采用CP-4型CMP抛光和测试系统,分别对蓝宝石进行粗研和精研加工,探索不同覆镍量对固着磨料研磨蓝宝石性能的影响。结果表明:金刚石磨粒表面镀镍可以改变其微观形貌:在实验范围内,随着金刚石包覆率的增加,摩擦因数、材料去除率和表面粗糙度呈现先增大后减小的趋势,其中粗研在包覆率为50%、精研在包覆率30%达到峰值;声发射信号呈现先减小后增大的趋势,其中粗研在包覆率50%、精研在包覆率30%达到谷值;粗研过程对包覆率的要求高于精研过程。     

Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

GaN-based blue light-emitting diodes (LEDs) on various patterned sapphire substrates (PSSs) are investigated in detail. Hemispherical and triangular pyramidal PSSs have been applied to improve the performance of LEDs compared with conventional LEDs grown on planar sapphire substrate. The structural, electrical, and optical properties of these LEDs are investigated. The leakage current is related to the crystalline quality of epitaxial GaN films, and it is improved by using the PSS technique. The light output power and emission efficiency of the LED grown on triangular pyramidal PSS with optimized fill factor show the best performance in all the samples, which indicates that the pattern structure and fill factor of the PSS are related to the capability of light extraction.     

Large Ti-doped sapphire single crystals grown by the kyropoulos technique for petawatt power laser application

Large diameter Ti-doped sapphire single crystals were grown by the Kyropoulos technique. The optical characterizations (luminescence, transmittance, evaluation of the FOM) of these bulk crystals are presented. The presented results are promising for the growth of large Ti-doped sapphire crystals by Kyroupolos technology for petawatt scale amplifier.     

Qualitative and quantitative bubbles defects analysis in undoped and Ti-doped sapphire crystals grown by Czochralski technique

Small bubbles can be observed in both sapphire and Ti-sapphire bulk crystals grown by Czochralski technique (Cz). Various thickness of wafers cut from the grown ingots were studied by optical microscopy. Bubbles distribution has different regulation in sapphire and Ti-sapphire crystals. All bubbles are spherical and have a diameter range from 2 μm to 5 μm in sapphire crystals while 10–45 μm in Ti-doped sapphire crystals. Some adjacent bubbles congregated into defects present various sizes and shape. The bubbles density increases as a function of pulling rate and rotation rate. The effect of bubbles on optical characterizations of Ti-sapphire crystals has been studied.     

利用光电反馈抑制钛宝石激光器低频段的强度噪声

对前置光电负反馈抑制钛宝石激光器强度噪声方法的特性进行了理论分析,表明注入噪声不同时对应的最佳反馈增益不同。利用前置光电负反馈方法,在实验上实现了全固态连续单频可调谐钛宝石激光器低频段的强度噪声抑制,通过调节反馈增益,使激光器的强度噪声抑制程度最大。在分析频率为1.125 MHz处,强度噪声由原来的8.7 dB降低到了1.4 dB,抑制程度达7.3 dB。调节反馈增益和相位延时,可以获得不同分析频率的强度噪声的降低。     

蓝宝石图形衬底上GaN低温缓冲层的研究

低温下,在蓝宝石图形衬底上使用金属有机化学气相沉积(MOCVD)生长低温GaN(LT-GaN)缓冲层,并对其表面形貌进行了细致的观察,发现了不同于已报道的GaN选择性成核生长现象。基于不同厚度的低温GaN缓冲层生长了n型GaN(n-GaN),发现过厚或者过薄的缓冲层都会对n-GaN晶体质量产生负面影响,并结合初始成核阶段进行了原因分析。制备了基于不同厚度的n-GaN的发光二极管(LED)样品,分析了GaN晶体质量对LED输出功率的影响。同时发现,晶体质量较差的时候,光提取效率可能主导着对LED器件性能的影响。