CIMS装配和拆卸生产线的可靠性分析

本文对ＣＩＭＳ装配线和拆卸线的可靠性问题进行研究。文中分析了它们的运行状况，求出了两种生产线的稳态可用度，并用一个例子加以说明。     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

~~Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor     

PARASITIC TOLERANT DIFFERENTIAL SC TRANSCONDUCTANCE USING UNITY GAIN BUFFERS

The unity gain buffer will be good to design high frequency SCF if its resistiveeffects can be eliminated,and therefore the whole parasitic sensitivities will greatly be reduced.On the basis of this concept,a novel parasitic tolerant SC DTE(differential transconductanceelement)is proposed.SC floating inductor and integrator fit for high frequency applications areformed by the DTE.The computer simulation and experiment on a third order elliptic LP filterverify its validity.     

Germanium islands embedded in strained silicon quantum wells grown on patterned substrates

Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature.     

Efficient Reflectance and Visibility Approximations for Environment Map Rendering

We present a technique for approximating isotropic BRDFs and precomputed self-occlusion that enables accurate and efficient prefiltered environment map rendering. Our approach uses a nonlinear approximation of the BRDF as a weighted sum of isotropic Gaussian functions. Our representation requires a minimal amount of storage, can accurately represent BRDFs of arbitrary sharpness, and is above all, efficient to render. We precompute visibility due to self-occlusion and store a low-frequency approximation suitable for glossy reflections. We demonstrate our method by fitting our representation to measured BRDF data, yielding high visual quality at real-time frame rates.     

高速连续数据记录系统中双页缓存的设计和实现

在高速连续数据记录系统中，存储设备需要速度匹配单元来实现高速连续数据记录，文章讨论了双页缓存在高速连续记录系统中的作用，并以实际开发的记录系统为例，详细介绍了双页缓存的设计和实现。     

Accurate Depth of Field Simulation in Real Time

We present a new post processing method of simulating depth of field based on accurate calculations of circles of confusion. Compared to previous work, our method derives actual scene depth information directly from the existing depth buffer, requires no specialized rendering passes, and allows easy integration into existing rendering applications. Our implementation uses an adaptive, two‐pass filter, producing a high quality depth of field effect that can be executed entirely on the GPU, taking advantage of the parallelism of modern graphics cards and permitting real time performance when applied to large numbers of pixels.     

Binary rewriting and call interception for efficient runtime protection against buffer overflows

Buffer overflow vulnerabilities are one of the most commonly and widely exploited security vulnerabilities in programs. Most existing solutions for avoiding buffer overflows are either inadequate, inefficient or incompatible with existing code. In this paper, we present a novel approach for transparent and efficient runtime protection against buffer overflows. The approach is implemented by two tools: Type Information Extractor and Depositor (TIED) and LibsafePlus. TIED is first used on a binary executable or shared library file to extract type information from the debugging information inserted in the file by the compiler and reinsert it in the file as a data structure available at runtime. LibsafePlus is a shared library that is preloaded when the program is run. LibsafePlus intercepts unsafe C library calls such as strcpy and uses the type information made available by TIED at runtime to determine whether it would be ‘safe’ to carry out the operation. With our simple design we are able to protect most applications with a performance overhead of less than 10%. Copyright © 2006 John Wiley & Sons, Ltd.