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排序方式: 共有78条查询结果,搜索用时 31 毫秒
1.
A high-throughput approach based on magnetron co-sputtering of alloy libraries is employed to inves-tigate mechanical properties of crystalline and amorphous alloys in a ternary palladium(Pd)-tungsten(W)-silicon(Si)system with the aim to reveal the difference in plastic deformation response and extract the relevant structure-property relationships of the alloys in the system.It was found that in contrast to crystalline alloys,the amorphous ones,i.e.,metallic glasses,exhibited a much smaller fluctuation range in the plasticity parameters(Er2/H and Wp/Wt),indicating a significant difference in the plastic deformation mechanism controlling the mechanical properties for the respective alloys.We propose that the inho-mogeneous deformation of amorphous alloys localized in thin shear bands is responsible for the weaker compositional dependence of both plasticity parameters,while dislocation gliding in crystalline materials is significantly more dependent on the exact structure,thus resulting in a larger scattering range.Based on the representative efficient cluster packing model,a set of composition-dependent atomic structural models is proposed to figure out the structure-property relationships of amorphous alloys in Pd-W-Si alloy system.  相似文献   
2.
《Ceramics International》2022,48(7):9083-9089
Direct-methane solid oxide fuel cells (DMSOFCs) have recently attracted substantial attention due to their simplified system, reduced cost, and the direct availability of methane fuel obtained from natural gas. Among oxygen-ion conductive materials, doped-ceria such as gadolinium-doped ceria (GDC) or samarium-doped ceria can be incorporated into Ni-based anodes to reinforce their coking resistance, enlarge their electrochemical reaction area, and improve the kinetics of the internal reforming/electrochemical oxidation of methane. To reduce the range of operating temperatures of DMSOFCs while maintaining their performance, the thin film deposition technique of magnetron sputtering was adopted in this work. An Ni-GDC thin-film anode and a Pt thin-film cathode were deposited on scandia-stabilized zirconia (ScSZ) electrolyte supports. This fuel cell was tested with directly supplied methane fuel (3% H2O) at 500 °C. The results demonstrated the effects of the GDC volume fraction in the anode—which was controlled by co-sputtering power—on open circuit voltage and electrochemical performance. The co-sputtered Ni-GDC anode was able to survive through 36-h operation, although there was some performance degradation. Field-emission scanning electron microscopy results revealed no formation of filamentous carbon on the Ni catalysts, despite the fact that both X-ray photoelectron spectroscopy and Raman spectroscopy analyses detected carbon coking. The relatively high performance and resistance to carbon coking of co-sputtered thin-film anode were attributed to its intrinsic small grain size.  相似文献   
3.
目的 利用高功率脉冲磁控溅射技术离化率高、溅射离子能量高等优点,在Cr-Al-N涂层中添加Si元素研制a-Si3N4包裹nc-(Cr,Al)N的纳米复合涂层,通过改变反应沉积时的N2/Ar比来调控涂层成分与结构,实现纳米复合Cr-Al-Si-N涂层性能优化。方法 采用高功率脉冲与脉冲直流复合磁控溅射技术制备Cr-Al-Si-N涂层。利用扫描电镜、X射线衍射仪、能谱仪、应力仪、纳米压痕仪、划痕测试仪和摩擦试验机,研究N2/Ar比对涂层成分、结构、力学性能以及摩擦学行为的影响。结果 涂层主要由面心立方结构的CrN与AlN相组成,且沿(200)晶面择优生长。当N2/Ar流量比为3∶1时,涂层与基体结合最好,临界载荷约为36.5 N;摩擦系数和内应力较低,分别为0.5和-0.48 GPa。当N2/Ar流量比为4∶1时,H/E值和H3/E*2值升至最高,分别为0.11和0.24 GPa,磨损率最低,约为1.9×10-4 μm3/(N?μm)。结论 当N2/Ar流量比为4∶1时,三靶共溅射制备的Cr-Al-Si-N涂层硬度较高,耐磨性能最好。  相似文献   
4.
在同一次双靶共溅射过程中,通过改变基体相对于靶材的位置制备了不同化学成份TiAl系金属间化合物薄膜.采用EDS、XRD、SEM、AFM等手段对薄膜的成分、物相结构和表面形貌进行了表征,并对薄膜的高温摩擦行为进行了分析研究.实验结果表明:薄膜的化学成分、物相结构、表面形貌都随着溅射位置的改变而发生变化,500℃以下时位于双靶中间位置的薄膜具有体系中最佳的性能.  相似文献   
5.
Sheng-Chi Chen  Ta-Huang Sun 《Vacuum》2010,84(12):1430-1434
Granular (FePt)100−x-(NiO)x nanocomposite thin films with x = 0 − 42 vol% were fabricated on a natural-oxidized Si(100) substrate. It is found that both the coercivity and FePt domain size decrease with increasing NiO content for the (FePt)100−x-(NiO)x films. When the FePt-NiO composite film with NiO content of 10.4 vol% is post-annealed at 750 °C with a high heating ramp rate of 100 °C/s, the in-plane coercivity (Hc//) and perpendicular coercivity (Hc) of the FePt films are 513 and 430 kA/m, respectively. On the other hand, we used conductive atomic force microscope (CAFM) to confirm that the NiO compound is distributed at boundary of FePt particles that will constrain the domain size of FePt and decrease the exchange coupling interactions between FePt magnetic particles.  相似文献   
6.
采用磁控共溅射方法在n型Si(100)基片上制备了一系列具有不同Co含量(x,at%)的Co掺杂非晶C颗粒薄膜,溅射温度为室温.研究了Co-C颗粒薄膜的微结构,磁输运特性及磁性能.通过优化Co含量,在低温下发现了较大的负磁电阻(MR).温度为2K、磁场为90×79.6 kA.ml时,Co含量为6.4 at%的Co-C薄膜的负磁电阻值最大,达到27.6%.随着Co含量从6.4 at%增加至16.4 at%,MR 值从27.6%逐渐减小至2.2%.电阻率ρ随温度T的变化曲线显示了线性的lnρ-T1/2关系,说明样品中电子传导遵循隧穿输运机制.  相似文献   
7.
X. Zhang 《Thin solid films》2009,518(5):1522-1526
A series of zirconium silicon nitride (Zr1−xSixN) thin films were grown on r-plane sapphire substrates using reactive RF magnetron co-sputtering of Zr and Si targets in a N2/Ar plasma. X-ray diffraction pole figure analysis, X-ray reflectivity, X-ray photoelectron spectroscopy (XPS), optical microscopy, and optical absorption spectroscopy were used to characterize the film stoichiometries and structures after growth at 200 °C and post-deposition annealing up to 1000 °C in ultra-high vacuum. The atomically clean r-plane sapphire substrates induce high quality (100) heteroepitaxy of ZrN films rather than the (111) orientation observed on steel and silicon substrates, but the addition of Si yields amorphous films at the 200 °C growth temperature. After the annealing treatment, films with Si content x < 0.15 have compressive stress and crystallize into a polycrystalline structure with (100) fiber texture. For x > 0.15, the films are amorphous and remain so even after ultra-high vacuum annealing at 1000 °C. XPS spectra indicate that the bonding changes from covalent to more ionic in character as Si―N bonds form instead of Zr―N bonds. X-ray reflectivity, atomic force microscopy (AFM) and optical microscopy data reveal that after post-deposition annealing the 100 nm thick films have an average roughness < 2 nm, except for Si content near x = 0.15 corresponding to where the film becomes amorphous rather than being polycrystalline. At this stoichiometry, evidence was found for regions of film delamination and hillock formation, which is presumably driven by strain at the interface between the film and sapphire substrate. UV-visible absorption spectra also were found to depend on the film stoichiometry. For the amorphous Si-rich films (x > 0.15), the optical band gap increases with Si content, whereas for Zr-rich films (x < 0.15), there is no band gap and the films are highly conductive.  相似文献   
8.
作为微电子器件中最具发展前景的高介电薄膜材料,HfO2薄膜得到了学者们的广泛研究。低漏电流是HfO2薄膜使器件获得优良性能的前提,但易受晶粒尺寸、氧空位和粗糙度等因素影响。针对反应磁控溅射所得薄膜表面粗糙度高及漏电流密度大等缺点,本文在溅射过程中通过在衬底施加偏压的方法降低了HfO2薄膜的漏电流密度。结果表明:通过在衬底施加适当的偏压使得Y掺杂HfO2(Y∶HfO2)薄膜的漏电流密度降低到8×10-8 A/cm2。漏电流密度的变化与薄膜粗糙度和晶粒尺寸有关,而薄膜粗糙度和晶粒尺寸主要受衬底偏压的影响,但衬底偏压对薄膜物相的影响可以忽略。通过施加衬底偏压,利用反应磁控溅射方法制备了低漏电流和高k值Y∶HfO2薄膜,可为高性能器件的制备提供基础。  相似文献   
9.
BaTiO3–CoFe2O4 composite films were prepared on (100) SrTiO3 substrates by using a radio-frequency magnetron co-sputtering method at 750 °C. These films contained highly (001)-oriented crystalline phases of perovskite BaTiO3 and spinel CoFe2O4, which can form a self-assembled nanostructure with BaTiO3 well-dispersed into CoFe2O4 under optimized sputtering conditions. A prominent dielectric percolation behavior was observed in the self-assembled nanocomposite. Compared with pure BaTiO3 films sputtered under similar conditions, the nanocomposite film showed higher dielectric constants and lower dielectric losses together with a dramatically suppressed frequency dispersion. This dielectric percolation phenomenon can be explained by the ‘micro-capacitor’ model, which was supported by measurement results of the electric polarization and leakage current.  相似文献   
10.
M. Kormunda  J. Pavlik 《Vacuum》2011,85(9):871-874
The SnO2 gas sensors and catalytic surfaces are produced by different techniques with a wide range of dopants improving their selectivity and sensitivities. The surface topology is important because the active surface area can be enlarged dramatically by employing nanostructures. Many reported techniques for the tin oxide nanostructures preparation require fine powders or liquid precursors together with high temperatures above 500 °C. But the nanostructures can be formed by the RF off-axis magnetron sputtering technique at room temperature from a bulk target. The single target co-sputtering of SnO2 target with Fe inset was used to deposit SnO2 film doped by iron.The 400 nm diameter pillars were successfully deposited in controllable density on polished Si substrates at low pressure 0.3 Pa of argon and oxygen gas mixture. The pillars were not formatted at the beginning of deposition process but certain SnO2 film was required. The surface around the pillars was flat without any significant texture.The iron in form of the iron oxide was found to be the doping in deposited coatings when the stannic oxide was sub-stoichiometry with oxygen vacancies.  相似文献   
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