Waveguide external cavity narrow linewidth semiconductor lasers

Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.     

Weighted regularized extreme learning machine to model the discharge coefficient of side slots

In the current research, a modern learning machine algorithm named “Weighted Regularized Extreme Learning Machine (WRELM)" is implemented for the first time for the simulation of the coefficient of discharge of side slots. For this purpose, an effective variable on the coefficient of discharge of side slots is firstly introduced, then five distinctive WRELM models are produced by it for the estimation of the coefficient. In the next stage, a database is created for verification of WRELM results. it should be mentioned that 70% of the data are utilized for training the WRELM models, while the rest (i.e. 30%) for testing them. After that, the optimal number of hidden layer neurons as well as the best activation function of the WRELM algorithm are chosen. In addition, the best regularization parameter and also the weight function of the WRELM are achieved. By conducting a sensitivity analysis, the most effective variable for the simulation of the coefficient of discharge along with the WRELM superior model is introduced. The WRELM superior model estimates values of the coefficient of discharge with the maximum exactness and the highest correlation. For instance, the estimations of the correlation coefficient and scatter index for this model are computed to be 0.930 and 0.051, respectively. The sensitivity analysis shows that the ratio of the side slot crest height to its length and the Froude number should be considered as the most important input variables. A comparison between the WRELM with the ELM displays that the former works much better. Furthermore, an uncertainty analysis is executed for both models. Eventually, an equation is suggested for the estimation of the coefficient of discharge and a partial derivative sensitivity analysis is performed on it.     

硼中子俘获治疗加速器ECR质子源电磁场仿真设计

电子回旋共振(ECR)质子源具有可给流强高、亮度高、可靠性高、使用频率高、易维护、小型化等优点，因而被硼中子俘获治疗(BNCT)装置的直线加速器所采用。本文利用CST软件对2.45 GHz ECR质子源进行优化设计。优化后ECR质子源的等离子体发生器腔体的尺寸为101.12 mm×45.00 mm，给出了脊波导耦合器的最优尺寸参数，使等离子体发生器腔体内电场强度提高为普通波导的4.5倍。通过Opera-3D对ECR质子源的引出电极结构进行了仿真计算，并给出了优化参数。另外，初步设计了质子源的线圈磁铁系统，优化了磁场分布。本文结果为质子源的研制提供了数据。     

Flower‐shaped ultra‐wideband fractal antenna

A flower‐shaped ultra‐wideband fractal antenna is presented. It comprises a fourth iterative flower‐shaped radiator, asymmetrical stub‐loaded feeding line, and coplanar quarter elliptical ground planes. A wide operating band of 12.12 GHz (4.58‐16.7 GHz) for S ₁₁ ≤ ? 10 dB is achieved along with an overall antenna footprint of 15.7 × 11.4 mm². In addition, other desirable characteristics, that is, omnidirectional radiation patterns, peak gain upto 5 dB, and fidelity factor more than 75% are achieved. A good agreement exists between the simulation and measured results. The obtained results illustrate that this antenna has wide operating range and compact dimensions than available structures.     

基于端面耦合的InP基激光器/硅光波导混合集成技术研究

针对硅光子集成回路缺少实用化光源的问题,提出了一种1.55μm波段InP基FP激光器芯片、InP基PIN光电探测器芯片与硅光波导芯片集成模块的设计与制备方法。使用CMOS工艺兼容的硅光无源器件制备工艺,设计并制备了倒拉锥型端面耦合器,与锥形透镜光纤耦合效率为36.7%。采用微组装对准技术将激光器芯片与硅波导芯片耦合、UV固化胶固化后耦合效率为35.8%,1 dB耦合对准容差横向为1.2μm,纵向为0.95μm。     

Numerical modeling of effect of slot on bubble motion in aluminum electrolytic process

A transient three-dimensional (3D) model was established to understand the bubble motion in an industrial electrolytic process. An anode with a new design was tested. It incorporates two slots that allow an efficient removal of gas bubbles. The electromagnetic fields were described by solving Maxwell's equations. The bubble movement was studied with two-way coupling Euler–Lagrange approach. The interplay of current density and bubble nucleation rate was included. The collision and coalescence of bubbles were considered. Random walk module was invoked for involving the chaotic effect of the turbulence. The numerical results were validated by experimental measurements. The results indicate that the current distribution and the bubble nucleation periodically change. Due to the slot, the bubble elimination heavily increases. The contribution of the slot to the bubble removal exceeds 50% in the case of three currents, and the promotion of the slot decays with increasing the current.     

槽波透射勘探技术在寺河矿的精准应用

在井下综采工作面一侧巷道内激发槽波,另一侧巷道中接收通过采面透射的槽波。利用煤层与岩层的物理力学差异,分析在煤层中激发和接收到的槽波,以此来探查综采工作面中地质构造、煤体破碎区、应力集中区的位置,从而为后期探测地质构造参数、煤体破碎区注浆、应力集中区消突等工作的顺利进行提供基础数据,提高后期工程实施的针对性。     

基于拓扑单向波导的电磁诱导透明效应研究

为了研究电磁诱导透明效应在拓扑单向波导中的表现，设计了一种基于磁性光子晶体的耦合谐振腔波导。通过对谐振腔位置的调控实现了具有单向性质的电磁诱导透明效应，并利用有限时域差分仿真证明了电磁诱导透明效应在单向拓扑波导中的相关特性。该研究可为拓扑波导中实现光延迟、光开关等提供参考。     

狭缝节流空气静压轴承局部气膜流场的直接数值模拟

采用3阶精度的迎风格式及2阶精度的中心差分格式,直接求解二维非定常N-S方程组,研究狭缝节流空气静压轴承压降恢复之后区域的流场特性。使用雷诺方程计算相同位置气膜中心处的流场状态,并与直接数值模拟方法的计算结果进行对比。结果表明:雷诺方程与N-S方程在计算域内计算结果基本一致,两者压力偏差为0.173%,速度偏差为1.217%;流场压力、密度沿气流方向逐渐减小,但在气膜方向几乎不变;流场速度、压力梯度沿气流方向逐渐增加,速度在流场出口处达到最大值;直接数值模拟方法得到了流场的温度变化,即整个流场的温度变化很小,温度整体呈上下高、中心低的分布,而雷诺方程无法计算得出整个流场的温度变化情况;采用雷诺方程计算轴承压降恢复之后区域的流场是合理的。     

Effects of deep etching methods on the microstructure of the etched vias of the silicon-based SIWF

The microstructure and the array accuracy of the etched vias of the silicon-basedsubstrate integrated waveguide filter (SIWF) are crucial to the electromagnetic performance and the reliability of the silicon-based SIWF. In this paper, three different etching methods, including potassiumhydroxide etching, picosecond UV laser etching, and inductively coupled plasma (ICP) etching are utilized to etch via arrays onhigh resistivity ［100］-siliconsubstrates. The profiles and the array accuracy of the vias are measured by optical critical dimension and the micromorphology of the vias is characterized byscanning electron microscopy (SEM), on the basis of which the effects of different deep etching methods on the microstructure of the viasidewall of the silicon-based SIWF are studied. The results indicate that the microstructure of the vias etched by the inductively coupled plasma etching method is the best. Meanwhile, this kind of vias has the highest array accuracy and the lowest roughness. So, under the current condition of process equipment and technical level, ICP etching is the optimal method for manufacturing deep via arrays of the silicon-based SIWF.