Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

Healing Effect of Controlled Anti‐Electromigration on Conventional and High‐Tc Superconducting Nanowires

The electromigration process has the potential capability to move atoms one by one when properly controlled. It is therefore an appealing tool to tune the cross section of monoatomic compounds with ultimate resolution or, in the case of polyatomic compounds, to change the stoichiometry with the same atomic precision. As demonstrated here, a combination of electromigration and anti‐electromigration can be used to reversibly displace atoms with a high degree of control. This enables a fine adjustment of the superconducting properties of Al weak links, whereas in Nb the diffusion of atoms leads to a more irreversible process. In a superconductor with a complex unit cell (La_2?x Ce_x CuO₄), the electromigration process acts selectively on the oxygen atoms with no apparent modification of the structure. This allows to adjust the doping of this compound and switch from a superconducting to an insulating state in a nearly reversible fashion. In addition, the conditions needed to replace feedback controlled electromigration by a simpler technique of electropulsing are discussed. These findings have a direct practical application as a method to explore the dependence of the characteristic parameters on the exact oxygen content and pave the way for a reversible control of local properties of nanowires.     

电化学修复后钢筋疲劳性能试验研究

为了探明电化学修复对钢筋疲劳性能的影响,开展电化学除氯和双向电迁处理后钢筋的轴向拉伸疲劳试验. 基于断裂力学原理及断口微观形貌分析,揭示电化学修复技术引起钢筋疲劳性能变化的机理. 结果表明,电化学除氯会引起钢筋疲劳裂纹门槛值的减小及疲劳弹性模量的退化,宏观表现为钢筋疲劳寿命减小;电化学除氯后钢筋疲劳裂纹起源于钢中白点,裂纹扩展区疲劳辉纹间距增大,瞬断区韧窝变小变浅. 掺入阻锈剂的双向电迁方法对钢筋疲劳性能的负面影响较小,双向电迁修复后钢筋的疲劳断口微观形貌相对于普通钢筋未见明显变化.     

一种智能型熔断器寿命试验与评估系统

根据老化机理建立的基于金属电迁移理论的熔断器寿命预测模型,开发了一套熔断器寿命评估系统。该系统能够采集精确的、全面的寿命试验数据,经过数据分析与处理,能得到组熔断器的预测寿命。最后,以TDP44-1A型熔断器为例,对所述寿命评估方法进行了验证,说明了方法的有效性。     

Oxygen stoichiometry and surface treatment effect on electromigration stability of high-T c Tl2Ba2CuO6+x superconductor

Electromigration stability of Tl₂Ba₂CuO_6+x ceramics is shown to decrease significantly when the material is treated in water vapor atmosphere. TheT _c decrease in these samples is accompanied by a resistance increase, while the Seebeck coefficient,S, remains unchanged. The authors conclude that the main effect comes from grain-boundary degradation under the water vapor treatment. For initial samples, electromigration stability strongly depends on the sample oxygen doping level and increases for materials with higher oxygen content. The effect is assumed to be due to the filling of interstitials in Tl-O layers by oxygen atoms.     

Electromigration effects in aluminum alloy metallization

An investigation of electromigration-induced failure in aluminum alloy films, with the major emphasis on aluminum-copper-silicon, was conducted. Flash evaporation was utilized for alloy deposition and yielded aluminum-copper films having electromigration resistance comparable to that of such films prepared by other techniques. Results for aluminum-copper-silicon and aluminum-copper were similar indicating the passive role of silicon in the presence of copper. Additions of four weight percent copper resulted in near-optimum electromigration resistance. In addition, hot-substrate deposition was beneficial in attaining greater lifetime. For films deposited on unheated substrates, or having lower copper contents, heat treatment seriously degraded electromigration resistance. Heat treatment effects were considered to be a consequence of copper redistribution. Lifetime decrease at large copper contents and possible saturation at large thicknesses were interpreted in terms of clustering of CuAl₂ precipitates. The superior reliability of copper-alloyed metallization when compared with aluminum or aluminum-silicon was clearly demonstrated. Lifetime improvement could be accounted for by the increased activation energy for the failure process in the aluminum-copper alloys.     

深亚微米SoC中的电源/地网络设计

随着芯片集成度的不断提高,其上所消耗的功率也在不断增加,因此,电源/地网络设计的可靠性与有效性就成为了SoC设计中一个关键性的问题.以往的设计中,通常都是由设计师根据经验进行电源/地网络的设计,因而可能导致设计效率的降低,延长了芯片的上市时间.针对这个问题,本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素.其次,提出了一种方法,在芯片物理设计的初始阶段,就对其电源/地网络进行可靠的估算,并在估算的基础上进行电源/地网络的设计,从而在设计的早期确保了电源分配的可靠性,提高了设计效率.最后,本文通过一个DSP＆CPU芯片的设计实例,介绍了该方法的使用,并获得了良好的效果.     

铝硅合金互连线电迁移失效试验

随着微电子技术的发展,作为超大规模集成电路互连线的金属薄膜的截面积越来越小,其承受的电流密度急剧增加,电迁移引起的互连失效变得尤为突出.针对集成电路中金属互连线的电迁移现象,以Black方程为基础,对其进行了修正.并以铝硅合金互连线为研究对象,对其电迁移过程进行了详细的加速寿命试验研究,获取了修正后的Black方程中的相关参数,分析了不同环境温度、不同电流密度、不同初始电阻等因素对铝互连线电迁移的影响规律.结果表明,铝硅合金互连线的电迁移寿命与上述参数均成反比关系.     

杂散电流环境下保护层内氯盐传输特性研究

采用电迁移锈蚀法对杂散电流环境下混凝土保护层中氯盐传输特性进行了研究。通过对四组试件在不同电流强度,不同通电时间情况下混凝土保护层内氯离子浓度的变化特征,重点分析了电场作用对保护层内氯离子传输进程和试件表面氯离子浓度的影响规律。结果表明,电场作用下保护层内氯离子浓度在数十小时内便从非稳态传输演变为稳态传输,传输效率较自由扩散高900多倍,但在稳态传输阶段氯离子浓度并非稳定不变,而是随通电时间增加整体呈下降趋势;保护层内氯离子达稳态传输前,混凝土表面氯离子浓度增长规律与一般氯盐环境中明显不同,其随通电时间增长以幂函数形式降低,随电流强度增加呈幂函数形式增长,且受通电时间的影响更为显著。