Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology

Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut~ technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most defects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.     

考虑固体变形与表面扩散的页岩气藏数值模拟

页岩气在页岩纳米孔隙中的运移对气藏的产能预测具有重要的意义。利用多物理场耦合软件COMSOL研究了单轴应变条件下,同时考虑岩层变形、气体流动及其相互作用时的页岩气运移。基于经典的Biot孔隙弹性理论考虑固体变形,并引入考虑多种流动机制的视渗透率模型修正传统的Darcy渗流模型,重点讨论表面吸附扩散、气藏初始孔隙率和固有渗透率对基质渗透率和流动机制的影响。结果表明:(1)页岩中的表面吸附扩散对页岩视渗透率有着重大的影响,尤其随着压力的降低,该影响更加明显,忽略表面吸附扩散将给出更低的视渗透率;(2)随着页岩气藏初始孔隙率的升高,Knudsen数和视渗透率升高,而随着初始渗透率的升高,Knudsen数和视渗透率降低;(3)Knudsen数、视渗透率和固有渗透率的变化取决于孔隙压力、解吸附、Knudsen扩散和表面吸附扩散等因素相互竞争的结果。