CoSb_3系热电材料的研究进展

介绍了CoSb3合金的基本特性、制备方法和成分掺杂.评述了目前通过不同的元素掺杂在热电性能方面取得的重大进展.指出通过结构优化、组分调整,可进一步提高CoSb3基合金的热电性能.     

镁掺杂磷铝分子筛可见光光催化性能的初步研究

采用水热反应的方法合成了金属镁掺杂的磷铝分子筛MgAPO-5,通过XRD、DR UV-Vis、FT-IR等手段对其结构性能进行表征,并以亚甲基蓝溶液为目标降解物,在可见光下考察了MgAPO-5的光催化性能.结果表明,MgAPO-5具有与AlPO4-5相同的分子筛结构,掺杂的镁可能存在于磷铝分子筛的骨架中,在可见光下对亚甲基蓝溶液具有优良的光催化性能,反应5 h,脱色率可达92.5%.     

Ca掺杂钨镁酸铅陶瓷材料的制备及其介电性能

研究了Ca掺杂钨镁酸铅(PMW)陶瓷材料的合成、结构、烧结以及介电性能。结果发现：在Ca^2 摩尔分数小于15％时，能形成单相的PCMW钙铁矿相，结构由原来的斜方相向立方相转变。用二步合成法制备的样品容易致密烧结，气孔率比一步法制备的样品小。Ca的加入降低了材料的介电损耗，在频率为1MHz时，介质损耗达到了10^-4。当Ca^2 摩尔分数大于10％时，材料的Curie峰宽化显著，介电常数温度系数降低。     

区熔硅近表面洁净区和体内微缺陷的形成

中子辐照区熔(氢)硅片经退火后在近表面形成洁净区,在硅片内部形成体内微缺陷.微缺陷的形成与中子辐照造成的损伤及单晶硅内氢杂质的催化加速有关,还与后续退火条件有关.第一步退火的温度对微缺陷的尺度有很大的影响,中低温要比高温所形成的微缺陷小.在退火过程中微缺陷有一个生长过程,1100℃退火2h微缺陷已达最大.硅片表面的粗糙度影响表面洁净区的形成,洁净区出现在未抛光面,双面抛光硅片不会形成表面洁净区.     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

Study on Luminescence Properties of High-Density Phosphors BiTaO4：Pr^3＋ and BiTaO4

The photoluminescence properties of BiTaO4:Pr^3 and BiTaO4 at room temperature were studied, and the infrared transmission and diffusion reflection spectra of BiTaO4 were measured. The photoluminescence spectrum of BiTaO4 peaks at about 420, 440 and 465nm. There has an obvious excitation band from 330 to 370nm. The photoluminescence spectrum of BiTaO4:Pr^3 consists of the characteristic emission of Pr^3 , and its main peak is at 606 nm from ^3P0→^3H6 transition of Pr^3 . Its excitation spectrum consists of the wide band with maximum at 325nm, the wide band in the range of 375-430nm, and the characteristic excitation of Pr^3 .The bands at 325nm and 375-430nm may be from the absorption of the charge transfer transition of the tantalate group and defect energy levels in its forbidden band, respectively.There is energy transfer from host to Pr^3 . Because both the host density and photoluminescence peak intensity of BiTaO4:Pr^3 are superior to PbWO4, BiTaO4:Pr^3 may be a potential heavy scintillator.     

Preparation and Properties of Sintering Additives Coated Si3N4 from Heterogeneous Nucleation Processing

The sintering additives such as Al2O3 and /or Y2O3 were coated on the surfaces of Si3N4 particles via heterogeneous nucleation processing using a buffered pH solution as the precipitation reagent .They nucleated and grew only on the surfaces of Si3N4 and did not form sol particles in solution by TEM observation .The isoelectric point(IEP) of coated Si3N4 was different from that of as-received Si3N4.The IEP of Al(OH)3-coated Si3N4 occurred at pH8.4, which is close to that of alumina .When Al(OH)3-coated Si3N4 particles were coated with Y(OH)3,the IEP of coated Si3N4 powder shifted from pH8.4 to pH9.2 ,similar to that of yttria.In addition ,the rheological data showed that Al2O3 and /or Y2O3 coated Si3N4 suspension is nearly Newtonian and that added Si3N4 suspension shows a shear rate thinning behavior.     

Mg-Si基热电化合物的研究现状

重点综述了Mg-Si基热电化合物的基本特性，该体系热电材料的制备方法与掺杂改性的研究进展，并提出了要重点解决的问题。