Effect of nickel addition on the physicochemical properties of SrTiO3-based materials

Synthesis of materials in Ni/SrTiO₃ system was undertaken. Perovskite structure material with nominal composition SrTi_0.98O₃ was synthesised by the sol-gel method. Nickel was introduced into the system by the wet impregnation method followed by proper thermal treatment. Two research paths were carried out: the evaluation of sintering conditions on material properties (sintering temperature: 1100, 1200, 1300 and 1400 °C; sintering time: 1, 3 and 5 h for sintering at 1300 °C) and the effect of nickel addition on the material properties - 1, 2, and 5 mol% of Ni compared to the amount of Ti was introduced into the analysed system. The microstructures of the materials, together with their structural (XRD analysis) and electrical (total conductivity and Seebeck coefficient) properties, were determined. Furthermore, temperature-programmed reduction (TPR) and temperature-programmed oxidation (TPOx) measurements were performed to evaluate the materials’ redox properties. It was shown that less than 1 mol% of Ni could be incorporated into the strontium titanate structure when a wet impregnation was chosen as the method for the introduction of Ni into the SrTiO₃-based system. NiO and, for the highest amount of introduced nickel, also NiTiO₃ were the main additional nickel-containing phases. For all materials synthesised in the Ni/SrTiO₃ system, the positive value of the Seebeck coefficient was observed, suggesting that nickel is an acceptor-type dopant while incorporated into the perovskite structure. However, the TPR measurements clearly imply that nickel can be incorporated into the strontium titanate structure in various oxidation states.     

Concentration dependence of physical properties of low temperature processed ZnO quantum dots thin films on polyethylene terephthalate as potential electron transport material for perovskite solar cell

Colloidal Zinc oxide quantum dots (ZnO QDs) prepared with varying concentrations through precipitation method were deposited on flexible ITO/PET substrates using spin-coating technique. Various characterization tools were utilized to investigate the morphological, structural, electrical and optical properties of the films. The crystallinity of the films was found to improve with increasing ZnO QD concentration (ZQ_C) as evident from the X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies. Crystallographic and optical parameters were evaluated and explained in depth. The average nanograin size and bandgap were increased and decreased respectively, from ～5 nm to ～8 nm and 3.29 eV–3.24 eV with an increase in ZQ_C from 10 mg/mL to 70 mg/mL. Columnar structure growth of the films is revealed by AFM results. The films showed decent optical transparency up to 81%. All the ZnO films exhibited n-type semiconducting property as indicated by the electrical measurements with carrier mobility and low resistivity of 12.21–26.63 cm²/Vs and 11.84 × 10^?3 to 13.16 × 10^?3 Ω cm respectively. Based on the experimental findings, ZnO QD nanostructure film grown at 50 mg/mL is envisaged to be a potential candidate for flexible perovskite photovoltaic application.     

Influence of Se and Te substitutions at Tl-site of Tl(Ba,Sr)CaCu2O7 superconductor on the AC susceptibility and electrical properties

The Sr and Ba bearing Tl-1212 phase, Tl(Ba,Sr)CaCu₂O₇ is an interesting superconductor. The Sr only bearing TlSr₂CaCu₂O₇ is not easily prepared in the superconducting form. The Ba only bearing TlBa₂CaCu₂O₇ on the other hand does not show improvement in the transition temperature with elemental substitution. In this work the influence of multivalent Se (non-metal) and Te (metalloid) substitutions at the Tl-site of Tl_1-xM_x(Ba,Sr)CaCu₂O₇ (M = Se or Te) superconductors for x = 0–0.6 was studied. The samples were prepared via the conventional solid-state reaction method. XRD patterns showed a single Tl-1212 phase for x = 0 and 0.1 Se substituted samples. The critical current density at the peak temperature, T_p of the imaginary (χ”) part of the AC susceptibility (χ = χ’ +χ”), J_c-inter(T_p) for all samples was between 15 and 21 A cm⁻². The highest superconducting transition temperature was shown by the x = 0.3 Se-substituted sample (T_c-onset = 104 K, T_c-zero = 89 K, T_cχ’ = 104 K and T_p = 80 K). Te suppressed the superconductivity of Tl-1212 phase. The order of highest transition temperatures are as follows: Tl_1-xTe_x(Ba,Sr)CaCu₂O₇<Tl(Ba,Sr)CaCu₂O₇<Tl_1-xSe_x(Ba,Sr)CaCu₂O₇. This work showed that Se was better than Te in improving the transition temperature and flux pinning of the Tl-1212 phase. The roles of ionic radius of Se and Te on the superconductivity of Tl(Ba,Sr)CaCu₂O₇ are discussed in this paper.     

人工智能赋能在线实验教学行为分析

教学行为分析作是教学质量分析的重要组成部分，也是教学引导与反馈机制的重要依据。文章阐述了人工智能（AI）的含义及发展历程，重点分析总结了教学行为分析方法及AI在教学行为分析上的应用。文章以东南大学电工电子在线实验为研究平台，探索分析了AI技术在实验教学行为分析上的可行性，梳理了基于专家系统的在线实验分析系统的设计思路，充分探讨了“智能”教育在实验教学中的深刻内涵。     

Effect of lattice structure evolution and stacking fault energy on the properties of Cu–ZrO2/GNP nanocomposites

A hybrid nanocomposite comprising nanosized ZrO₂ and graphene nanoplatelet (GNP)-reinforced Cu matrix was synthesised via powder metallurgy. The influence of sintering temperature and GNP content on the electrical and mechanical behaviour of the Cu–ZrO₂/GNP nanocomposite was investigated. The ZrO₂ concentration was fixed at 10% for all the composites. Upon increasing the GNP concentration up to 0.5%, a significant improvement was observed in the compressive strength, microhardness, and electrical conductivity of the composite. Furthermore, the properties were significantly improved by increasing the sintering temperature from 900 to 1000 °C. The compressive strength, hardness, and electrical conductivity of Cu–10%ZrO₂/0.5%GNP were higher than those of the Cu–ZrO₂ nanocomposite by 60, 21, and 23.8%, respectively. This improvement in the mechanical properties is because of the decrease in the crystallite size and dislocation spacing, which increases the dislocation density, thereby increasing the impedance towards dislocation movement. The lower stacking fault energy of the hybrid nanocomposites enables easier electron transfer within and between the Cu grains, resulting in an improved electrical conductivity. The enhancement in strength and electrical conductivity were aided by the GNPs and ZrO₂ nanoparticles that were dispersed widely in the Cu matrix.     

Optimizing the stability and electrical transport properties of CeNbO4+δ-based oxide ceramics by regulating oxygen ion content

CeNbO_4+δ ceramics have attracted extensive research interest because of their unique mixed ion-electron transport characteristics and interesting structure-functional characteristics caused by the difference in oxygen ion content. Although the change of oxygen ion content brings rich redox properties, it also causes serious crystal transformation and abnormal electrical transport properties. In order to obtain stable structure and excellent electrical transport properties, the directional regulation of the oxygen ion content has been realized through introducing Al₂O₃ and high temperature aging. After 600 h of aging at 1073 K, the prepared composite ceramics not only obtain a stable structure without crystal transformation, but also show good negative temperature coefficient (NTC) thermistor characteristics in the temperature range of 473 K–1273 K, in which the linear fitting maximum Pearson's r of the relationship between lnρ and 1000/T can reach 99.97%. The proposed method provides a new thought for the design and application of high-temperature electronic ceramics.     

High-temperature electrical properties of polymer-derived ceramic SiBCN thin films fabricated by direct writing

The in situ temperature monitoring of hot components in harsh environments remains a challenging task. In this study, SiBCN thin-film resistance grids with thicknesses of 1.8 μm were fabricated on alumina substrates via direct writing. Owing to their dense microscopic morphology and extremely high graphitisation level, the produced SiBCN films exhibited large high-temperature oxidation resistance and electrical conductivity. The resistance–temperature, stability, and repeatability characteristics of these films were examined in an aerobic environment at temperatures up to 800 °C. The obtained results revealed that the thermistor resistance decreased monotonously with increasing temperature from room temperature to 800 °C. The SiBCN film resistance variations observed during repeated temperature cycling in the regions of 505–620 °C and 610–720 °C were 0.09% and 1.7%, respectively. The high cyclability and stability of the SiBCN thin film thermistor suggested its potential applicability for the in situ temperature monitoring of hot components in harsh environments.     

Electrical polarization and ionic conduction properties of β-tricalcium phosphate bioceramics with controlled vacancies by sodium ion substitution

With the aim to understand electric polarization mechanisms of β-tricalcium phosphate as an advanced biomaterial, Na ion-substituted β-Ca₃(PO₄)₂ (Na-β-TCPs) ceramics with controlled lattice vacancies were synthesized and structural refinement was performed by the Rietveld method. The Rietveld analysis revealed that Ca and vacancies at Ca(4) sites in the β-TCP structure decreased with an increase in Na substitution. Electrical measurements by the complex impedance method revealed that the conductivity and the activation energy calculated from Cole-Cole plots rapidly decreased to a constant value with an increase in Na substitution and decrease in vacancies. The thermally stimulated depolarization current (TSDC) curve of the electrically polarized Na-β-TCP showed one large peak at 530–610 °C. However, the accumulated charge decreased with an increase in Na ions and decrease in vacancies up to 2.37 mol%, after which it became constant. These results are consistent with the presumed formation of a dipole moment between aligned Ca²⁺ ions and their vacancies along the direction of the external polarization field applied at high temperature. We conclude that the large amount of stored charge in β-TCP caused by electrical polarization is due to the low site occupancy of calcium ions and vacancies at Ca(4) sites in the β-TCP structure, which is not the case for hydroxyapatite (HAp), as previously reported.     

Preparation and properties of AZO/PS/AZO tri-layer transparent conductive film with a light-trapping structure

The light-trapping structure is an effective method to increase solar light capture efficiency in the solar cells. In this study, Al-doped ZnO (AZO)/polystyrene (PS)/AZO tri-layer transparent conductive film with light-trapping structure was fabricated by magnetron sputtering and liquid phase methods. The structural, optical and electrical properties of the AZO films could be controlled by different growth conditions. When the sputtering pressure of the under-layer AZO film was 0.2 Pa, the discharge voltage was around 80 V, which was within the optimal process window for obtaining AZO film with high crystallinity. The optimal under-layer AZO film had a large surface roughness and a very low static water contact angle of 75.71°, promoting the relatively uniform distribution of PS spheres. Under this sputtering condition, the prepared AZO/PS/AZO tri-layer film had the highest crystallinity and least point defects. The highest carrier concentration and Hall mobility are 3.0 × 10²¹ cm^-3and 5.39 cm² V^-1 s^-1, respectively. Additionally, a transparent conductive film with the lowest resistivity value (3.88 × 10^-4 Ω cm) and the highest average haze value (26.5%) was obtained by optimizing the process parameters. These properties were comparable to or exceed the reported values of surface-textured SnO₂-based as well as ZnO-based TCOs films, making our films suitable for transparent electrode applications, especially in thin-film solar cells.