复合泡沫塑料的性能改进研究

为改善复合泡沫塑料的介电性能,采用金属氧化物粒子填充改性双马来酰亚胺空芯玻璃微球复合泡沫塑料得到了高介电常数、低介质损耗因数、低密度、力学性能良好的电介质材料。     

Computing the Maximum Degree of Minors in Matrix Pencils via Combinatorial Relaxation

   Abstract. This paper presents a new algorithm for computing the maximum degree δ _k (A) of a minor of order k in a matrix pencil A(s) . The problem is of practical significance in the field of numerical analysis and systems control. The algorithm adopts a general framework of ``combinatorial relaxation' due to Murota. It first solves the weighted bipartite matching problem to obtain an estimate

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of d...     

宽频介电谱仪热激励去极化电流功能研究

利用宽频介电谱仪拓展热激励去极化电流模块测量介质材料的TSDC操作简单实用,它不仅容易把材料中的各种不同活化能或弛豫时间的荷电粒子区分开,并且能从TSDC谱中直接得出被测材料的介电性能以及相关微观参数,这为研究材料内部机理提供了一条捷径。     

钴钇掺杂（Ba,Sr）TiO_3基介电陶瓷的制备与性能研究

采用二次固相反应法制备Ba0.7Sr0.3TiO3介电陶瓷,研究了掺杂钴、钇离子对钛酸锶钡介电性能的影响。结果表明,陶瓷样品Y3＋、Co3＋的最佳掺杂浓度分别为0.04mol%和0.05mol%,最佳烧结温度为1340℃,样品的相对介电常数为4200,介电损耗（tanδ）为0.005。样品的结构为四方晶系,P4mm空间群。获得了高介电常数、低损耗的Ba0.7Sr0.3TiO3介电陶瓷。     

Reduction of electromagnetic field coupling to microwave microstrip circuits

The signals induced by an external electromagnetic field along a microstrip line on a multilayered dielectric substrate were studied. The main target of the work is not to introduce a new technique of study but to search for suitable combinations of the structural and geometrical characteristics of the printed geometry whereby the electromagnetic interference of the external field to the circuit would be reduced. This reduction is desirable in all modern applications. The results derived prove that this object can be achieved at high frequencies and when the substrate is multilayered.     

Quenching of self-excited vibrations

Stable normal-mode vibrations in engineering can be undesirable and one of the possibilities for quenching these is by embedding the oscillator in an autoparametric system by coupling to a damped oscillator. There exists the possibility of destabilizing the undesirable vibrations by a suitable tuning and choice of nonlinear coupling parameters. An additional feature is that, to make the quenching effective in the case of relaxation oscillations, one also has to deform the slow manifold by choosing appropriate coupling; this is illustrated for Rayleigh and van der Pol relaxation.     

The Metal-Dielectric Resonator Method of Measuring the Parameters of Radio Materials

The use of symmetrical H- and E-modes and asymmetrical E-modes in a longitudinally anisotropic dielectric cylinder with metal mirrors at the ends to measure its permittivity and dielectric loss tangent is considered. It is shown that the method has wider possibilities compared with the IEC-61338 recommendations. The results of a measurement of the dielectric parameters of a number of materials in the 2–78 GHz frequency band, including the permittivity tensor of sapphire, are presented. __________ Translated from Izmeritel'naya Tekhnika, No. 9, pp. 65–70, September, 2005.     

Nanoluminograph — A New Generation of Measuring Instruments

A nanoluminescent device, or nanoluminograph, has been developed, created, and patented. By means of the device, unique information about the physicochemical properties of surface and near-surface layers of solids and ultrathin coatings of thickness less than 0.4 μm may be obtained. There is also the hope of decreasing the thickness of the subject layer with further development of the detecting component of the device. __________ Translated from Izmeritel'naya Tekhnika, No. 8, pp. 28–31, August, 2005.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.