High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

适用于啤酒行业能源管理的智能冷量积算仪

介绍了智能冷量积算仪的测量原理以及软硬件设计，该仪表适用于啤酒行业中冰水和乙二醇水溶液冷量计量，并得到成功应用，具有广阔的应用前景。     

Impact of microstructure on stability of permanent magnet biasedmagnetoresistive heads

This work pertains to output voltage stability of soft adjacent layer biased magnetoresistive heads with abutted permanent magnetic films for domain stabilization. A micromagnetic model has been developed to study the effect of the permanent magnet film microstructure and the micromagnetic properties of the abutted junction interface on head stability. The impact on head stability is analyzed with respect to interfacial ferromagnetic coupling across the junction interface and intergranular exchange coupling in the permanent magnet films among other film properties     

镨掺杂分布对1.3μm光纤放大器特性影响

对掺氟化镨玻璃光纤放大器的小信号增益，用广义的高斯近似公式可获得精确的分析表达。文中研究了限制光纤芯层中央部分的镨掺杂对光纤放大器特性的影响，结果发现限制镨掺杂分布能改进光纤放大器的工作效率，且截止波长比芯层全部均匀掺镨的光纤更长。     

Continuously chirped DFB gratings by specially bent waveguides fortunable lasers

We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision. The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 nm without wavelength gaps and high side mode suppression ratio     

In-chain functionalization by alternating anionic copolymerization of styrene and 1-(4-dimethylaminophenyl)-1-phenylethylene

Anionic copolymerizations of styrene (M₁) with excess 1-(4-dimethyl-aminophenyl)-1-phenylethylene (M₂) were conducted in benzene at 25°C for 24h, using sec-butyllithium as initiator. Narrow molecular weight distribution copolymers with M?;_n = 16.1 × 10³ g/mol (M?_w/M?_n = 1.04) and 38.2 × 10³g/mol (M?_w/M?_n = 1.05), and 24 and 38 moles of M₂ per macromolecule, respectively, were characterized by size exclusion chromatography, ¹H NMR spectroscopy and DSC. The monomer reactivity ratio, r₁ = 5.6, was obtained from the copolymer composition at complete consumption of M₁, assuming that the rate constant k₂₂ =0,i.e. r₂ =0. The polymers exhibited T_g values of 128 and 119°C, respectively, which correspond to an estimated T_g = 217°C for the hypothetical homopolymer of M₂.     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

Access-mode predictions for low-power cache design

An access-mode prediction technique based on cache hit and miss speculation for cache design-achieves minimal energy consumption. Using this method, cache accesses can be adaptively switched between the way-prediction and the phased accessing modes.     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device