Effect of sodium doping on graded Cu(In1−xGax)Se2 thin films prepared by chemical spray pyrolysis

In the present work we have studied the effect of Na on the properties of graded Cu(In_1−xGa_x)Se₂ (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×10¹⁸–2.5×10¹⁹ cm⁻³) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Fully solution-processed and multilayer blue organic light-emitting diodes based on efficient small molecule emissive layer and intergrated interlayer optimization

Efficient and fully solution-processed blue organic light-emitting diodes (OLEDs) based on fluorescent small-molecule and methanol/water soluble conjugated polymer as electron-injection material are reported. The emitting layer is 3,6-bis(9,9,9′,9′-tetrakis (6-(9H-carbazol-9-yl)hexyl)-9H,9′H-[2,2′-bifluoren]-7-yl)dib-nzo[b, d]thiophene 5, 5-dioxide (OCSoC) with a blue-fluorescent small-molecule, and a methanol/water soluble polymer poly[(9,9-bis(30-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl-fluorene)] (PFN) acted as electron-injection layer (EIL). All the organic layers are spin-coated from solution. The multilayer device structure with emitting layer/electron-injection layer is achieved by solution-processed method without the dissolution problem between layers. The performances of the devices show that the maximum luminous efficiency of the multilayer device is increased about 43%, compared to the single-layer device. PFN acting as the EIL material plays a key role in the improvement of the device performance when used in solution-processed small-molecule OLEDs.     

测井资料在优选压裂层位中的应用

压裂是低孔、低渗油层改造的主要增产措施。根据常规测井资料、岩石物理实验分析数据及试油成果。研究储层四性关系，确定区块的低孔、低渗储层评价标准。进一步对油层进行分类，有针对性地为油层压裂提供施工层位和准确的储层参数。通过商543区块实例，阐述了选择压裂层位的方法。     

湘中海相浅层湘冷1井酸压工艺研究及应用

湘冷1井具有气层埋藏浅（400m-500m）、纵向上裂隙发育的特点，属低孔、低渗的含泥质灰岩致密储层。大量室内实验和研究采用“前置液酸压＋闭合酸化”工艺技术，并优选了相应降阻酸和闭合酸配方。通过酸压实现了该井工业油气流的突破，取得了明显的增产效果，为新区海相浅层气的开发探索出了一套成熟的改造增产措施。     

高抗挤厚壁套管的性能及应用效果评价

中原油田套管损坏的主要原因是现有套管强度不够,无法抵抗盐膏层段的巨大外挤力。开发了TP130TT型高抗挤厚壁套管,其强度能很好地抵抗盐膏层巨大外挤力。实验室试验表明,各项性能指标达到了设计要求,现场使用取得了很好的效果,解决了中原油田盐膏层段套管强度不足的难题。     

宝浪油田宝北区块低渗透油藏层系优化研究

针对宝浪油田宝北区块低孔低渗油藏地质特征以及油层层数多、分布井段长、部分零散层动用难度大等问题 ,研究了宝北区有效厚度、油层层数、单井产能及单井控制地质储量等层系划分与组合的技术经济界限 ,并在此基础上进行了宝北区层系划分与组合优化论证 ,最终优选出宝北区开发层系     

Corrosion behaviour of low-Si alloyed steels in neutral reducing conditions at 90 °C

Electrochemical investigations on low-Si alloyed steels with Si content ranging from 0.25 to 3.2 wt.% were carried out in a 0.1 M NaCl borate-buffered solution (pH 8.4) in reducing conditions at 90 °C. Silicon as an alloying element was proved to degrade at first the steel ability to passivate. For longer immersion times, protective effects developed more efficiently on the steel containing 3.2 wt.% silicon. Passive layers electrochemically formed in the transpassive domain on the steel containing 3.2% Si were shown to be significantly different from those grown at rest potential.     

深穿透复合射孔技术在中原油田的应用

深穿透复合射孔是一项把射孔与高能气体压裂两种技术有机地结合在一起的综合改造油气层的新技术。重点对它的技术原理，包括设计原理、枪身内火药燃烧气体对射孔孔眼的冲刷作用原理、火药燃烧气体射流的高能气体压裂作用原理等进行了研究与探讨，同时对它的施工工艺、现场应用等方面进行了阐述，经中原油田189口井现场应用证明，其工艺简便，成本低廉，可实现多层跨隔层使用，处理后增产效果显著，投入产出比高，可代替传统的聚能射孔技术，具有广阔的推广和应用价值。