Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

不同压力下气层岩样m、n值变化的实验研究

胶结指数m和饱和度指数n变化规律的研究一直是岩石物理学家和测井解释分析家关注的问题。压力是影响m、n的重要因素,但迄今为止,仍未取得可使多数人接受的一般性结论。实验开展了低孔隙度低渗透率气层岩样在不同压力条件下的电阻率测量,在考虑孔隙度随压力变化的基础上建立了m、n参数随压力变化的关系,得出结论:某些地区的气层岩样在压力增大时即使考虑孔隙度变化,m值增大,n值减小。     

Origin of the negative wake behind a bubble rising in non-Newtonian fluids

The present work aims at understanding the behavior of individual bubbles in non-Newtonian fluids. By means of a Particle Image Velocimetry (PIV) device, the complete flow field around either a single non-spherical bubble rising in polyacrylamide (PAAm) solutions or a solid sphere settling down in the same fluids shows for the first time the similar coexistence of three distinct zones: a central downward flow behind the bubble or the sphere (negative wake), a conical upward flow surrounding the negative wake zone, and an upward flow zone in front of the bubble or the sphere. This excludes then the possible influence of the interface deformation on the negative wake. A theoretical lattice Boltzmann scheme coupled to a sixth-order Maxwell model was developed for computing the complex flow field around a solid sphere. The good agreement with the experimental measurements provides evidence that the physical mechanism responsible for the negative wake in such fluids could be related to the fluid's viscoelastic properties.     

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al₂O₃ layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al₂O₃ are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers.     

Electrocopolymerization of aniline and ortho-phenylenediamine via facile negative shift of polyaniline redox peaks

Oxidative electropolymerization of aniline (Ani) in phosphoric acid (H₃PO₄) on composite 2B pencil graphite was accomplished using selected inorganic salts as supporting electrolytes. These salts determined the degree of conductivity of polyaniline (PAni) formed. The conductivity was in the order of CaCl₂ > KCl > ZnCl₂ > ZnSO₄ > Ca₃(PO₄)₂. The three pairs of redox peaks in the voltammogram of PAni formed in the presence of 0.06 M Ca₃(PO₄)₂ and 0.2 M ZnSO₄ have shifted 300 mV to the negative potential. The shifting of peaks is strongly influenced by type of anions' presence in the salts. However, the nature of the available cations had no significant effect. The negative shifts of redox peaks were exploited to facilitate the electrocopolymerization of Ani and ortho-phenylenediamine (oPD). The formation of the poly(Ani-co-oPD) was confirmed by the FTIR spectra.     

Brief Overview of Recent Developments on Negative Phase–Velocity Mediums (alias Left–Handed Materials)

This brief overview covers a rapidly occurring development in the area of microwave composite materials: isotropic dielectric–magnetic mediums wherein the phase velocity vector and the time–averaged Poynting vector are oppositely directed. Such materials have also been inappropriately designated as left–handed materials. Ramifications for aberration–free lenses, homogenization approaches, and complex mediums are also presented.     

用测井资料预测储层的润湿性

岩心电性及润湿性实验测量结果表明，润湿性对阿尔奇饱和度指数n有很大影响。通过引入相对润湿指数，发现阿尔奇饱和度指数n的对数与相润湿指数之间存在很好的线性关系，为利用饱和度指数预测储层的润湿性提供了依据。同时使用电磁波传播测井和微球形聚焦电阻率测井求出饱和度指数随地层深度的变化曲线，预测储层的润湿性。现场井资料处理结果表明，该方法能快速直观显示不同深度处储层润湿性的变化。     

一种新型硅三端负阻器件

提出并研制成一种新型硅三端负阻器件。该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有“双负阻”特性和正阻区阻值易于控制等特点。由理论计算出的器件I_c—V_(CB)特性和负阻参数与实验结果符合良好。     

一类负模量Kirchhoff - Carrier方程的解

利用变分方法和反证法研究了一类含有非线性项的Kirchhoff - Carrier方程,证明了当0<λ1时,该方程至少存在一对非平凡解,且当λ≥a λ₁时该方程不存在同号解.     

Environmental and climate justice and technological carbon removal

Environmental justice (EJ) and climate justice are becoming central foci of climate policy. Awareness is also growing on the need for some amount of carbon dioxide removal (CDR) to curb warming to 1.5 °C. In this paper we map dimensions of environmental and climate justice that stakeholders and communities will need to consider -- from local to global scales. Mapping issues is a step towards developing frameworks to undertake CDR in an environmentally just way.