信息系统灾难恢复能力评估方法研究

论文提出了一种信息系统灾难恢复能力评估方法:信息资产分析方法、本地灾难恢复和远程灾难恢复等级的划分方法,并在此基础上,利用AHP层次分析法,构建了一套灾难恢复能力评估指标体系。该方法可以使评估结果具有更好的针对性和全面性。     

UC3875在超声电源功率控制系统中的应用

根据超声波发生器的功率控制系统原理 ,阐述了移相控制策略对超声波发生器输出电压波形的影响 ,介绍了移相控制专用芯片UC3875的电路结构和使用设计方法。     

服装湿冷机理分析

本文在明确冷暖感、湿冷感、接触湿冷感等概念的基础上,分析了在冬季着装状态下,人体热量、水汽 散失的途径和人体产生冷感的原因。     

Effect of Fog and Clouds on the Image Quality in Millimeter Communications

The effect of fog and clouds in millimeter communication is discussed, and the attenuation caused by fog and clouds is reviewed. Signal-to-noise ratio (SNR) of image is derived using relating models of fog and clouds attenuation. According to the relation of image quality and its signal-to-noise ratio, the system behavior is forecasted theoretically. It is shown that the signal-to-noise ratio of receiver at certain transmitter power is inverse with radio wave frequency, from about 70dB at 10GHz to 48dB for fog and 49dB for clouds. The image quality of received signal at certain transmitter power is inverse with radio wave frequency, from about 7 grade at 10GHz to 5.27 grade for fog and 5.37 grade for clouds. The above calculated results are consistent with experimental results.     

Windows系统中两种动态交换数据的方法

本文介绍了Ｗｉｎｄｏｗｓ环境下基于消息的ＤＤＥ和基于动态链接库的ＤＤＥＭＬ的区别，并详细叙述了如何使用ＤＤＥＭＬ编制Ｗｉｎｄｏｗｓ应用程序。     

激光冶炼太阳级硅材料的实验研究

通过实验研究表明，大功率ＣＯ２激光器在廉价硅材料制备中应用的可能性。     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

Cif2000平台下的核磁共振测井解谱方法研究

介绍了在Cif2000多井解释平台下的核磁共振解谱方法与编程实现。解谱采用加入平滑因子后在特征矩阵的奇异值分解中截去小的非零奇异值的方法，可以在低信噪比时得到稳定的弛豫谱，在油田实际应用中证明了该方法的有效性。根据该方法在Cif2000平台上编制了完整的解谱处理程序，可以直接用于油田的生产实际。     

第三代短波自动链路建立系统特性分析及仿真实现

分析了第三代短波自动链路建立系统的工作特性及技术特点，并对系统仿真实现的原则及一些细节问题进行了较深入的探讨，同时对仿真实现中涉及的链路质量分析（LQA）算法进行了研究。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively