A Web-based flood forecasting system for Shuangpai region

Traditional flood forecasting and operation of reservoirs in China are based on manual calculations by hydrologists or through standalone computer programs. The main drawbacks of these methods are long forecasting time due to time-consuming nature, individual knowledge, lack of communication, absence of experts, etc. A Web-based flood forecasting system (WFFS), which includes five main modules: real-time rainfall data conversion, model-driven hydrologic forecasting, model calibration, precipitation forecasting, and flood analysis, is presented in this paper. The WFFS brings significant convenience to personnel engaged in flood forecasting and control and allows real-time contribution of a wide range of experts at other spatial locations in times of emergency. The conceptual framework and detailed components of the proposed WFFS, which employs a multi-tiered architecture, are illustrated. Multi-tiered architecture offers great flexibility, portability, reusability and reliability. The prototype WFFS has been developed in Java programming language and applied in Shuangpai region with a satisfactory result.     

Effects of gate dielectric surface modification on phototransistors with polymer-blended benzothieno[2,3-b]benzothiophene semiconductor thin films

In the present work, we investigated effects of the dielectric/semiconductor interface modification on the photoelectrical properties of phototransistors comprising a UV responsive semiconductor blend 2,7-dipentyl-[1]benzothieno[2,3-b][1]benzothiophene (C5-BTBT) and a linear unsaturated polyester (L-upe). Using various self-assembly monolayers with different end-groups at the dielectric/semiconductor interface we modulated the drain photocurrent and response times under the UV light illumination of phototransistors. Treatment of the SiO₂ dielectric surface with organosilanes led to the variation of the max mobility in the dark 0.10–0.18 cm² V⁻¹ s⁻¹ and under UV light 0.08–0.50 cm² V⁻¹ s⁻¹. Interestingly, detailed crystal structure analysis using 2D X-ray diffraction and photoelectrical characterization revealed that mobility in the dark predominantly depends on the alignment of C5-BTBT crystallites at the interface. Under UV light, the mobility increased with the electron withdrawing/donating nature of the SAM end-functional group. Additionally, chemical modification of the SiO₂ dielectric surface increased photocurrent relaxation/decay times upon UV light removal while retaining fast response times when exposed to UV light, which enhanced memory properties of fabricated phototransistors (fast UV response = writing and long relaxation = long data storage).     

Study of Ka-band TM01 to TE11 Mode Converters with Parallel Input and Output Waveguides

Based on the bent waveguide mode coupling theory, a combined TM₀₁-TE₁₁ mode converter with parallel input and output ports is designed by numerical calculation with the phase rematch technology employed. A numerical calculation comparison between the converter and another double-arc TM₀₁-TE₁₁ mode converter with nonparallel input and output ports shows that the former has obvious advantages over the latter in conversion, bandwidth and compact. Good agreement between tests and calculations shows the converter meets the application well.     

Low-temperature processing of antimony-implanted silicon

It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square) following low-temperature processing. Thus, annealing at 650°C produces the best results for antimony, whereas for arsenic, it is necessary to anneal at temperatures above 1000°C to get optimum results. Silicon was implanted with antimony at 12 keV and 40 keV and doses of 8.5×10¹⁴ cm⁻² and 4×10¹⁴ cm⁻², respectively, and arsenic at equivalent energies and doses. The electrical data from both implants are compared in order to identify the process conditions require to obtain optimum results. It is demonstrated that annealing below 800°C produces electrical profiles with no measurable diffusion of the antimony, but higher temperature anneals produce significant diffusional broadening.     

Spatially resolved extrinsic photoresponse under additional intrinsic bias photoexcitation of two terminal pentacene devices

Spatially resolved extrinsic photoresponse experiments in pentacene two terminal devices without or under additional intrinsic bias-light excitation are employed. These experiments are used to investigate the microscopic mechanism of the recently observed phenomenon of the photoresponse enhancement under additional bias-light intrinsic excitation and to preclude that this phenomenon arises from contact-related artifacts. It is found that the extrinsic photogeneration near the contacts via electric field-assisted exciton splitting and/or light-induced depletion width-reduction have a negligible contribution to the extrinsic photoresponse. Under additional bias-light intrinsic excitation, a uniform increase of the photogenerated hole density is found to take place across the whole conduction channel, without changes in the electric field distribution and in the interfacial properties of the contacts. The photoresponse enhancement by the blue bias-light becomes stronger upon increasing the red-light intensity. A nearly square root dependence of the photoresponse enhancement on the blue bias-light intensity is found. It is shown that the observed dependence of the photoresponse enhancement on the light intensities of the extrinsic and intrinsic excitation can be explained with the extrinsic photogeneration mechanism based on hole detrapping by triplet exciton dissociation.     

Effect of highly dispersed sputtered silver nanoparticles on structural properties of multiwalled carbon nanotubes

A simple method to decorate mutliwalled carbon nanotubes (MWCNTs) with silver nanoparticles (Ag NPs) to enhance the structural properties is reported in the present study. The Ag NPs of average size 9 nm were deposited uniformly on MWCNTs network by RF sputtering technique. X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM) are used to compare the structural properties of Ag NPs sputtered nanotubes with those containing functionalized tubes. In addition, effect of these Ag NPs on the surface of nanotubes and optimization of the experimental parameter for uniform deposition of Ag NPs are also discussed.     

基于矢量有限元的任意介质加载波导通用软件设计

本文旨在实现波导问题的通用软件设计,文章完善了各向异性介质填充波导问题的矢量有限元理论,并计算了有耗、各向异性介质加载的任意结构波导模式传输系数、色散曲线和模式电场分布。在计算色散曲线时,本文结合了模式场图以消除HFSS在色散计算过程中对传输模式的误判。对于开放结构波导,采用各项异性介质的完全匹配层（PML）理论实现无限的问题截断。通过与商业电磁仿真软件的计算结果作比较,验证了算法的精确性。     

Aqueous solution-processed InCl3 as an effective buffer layer to improve hole injection in simplified phosphorescent organic light emitting diodes

An effective anode buffer layer is demonstrated by aqueous solution-processed indium trichloride (sInCl₃) in simplified phosphorescent organic light emitting diodes (PhOLEDs). The hole injection is improved in sInCl₃ based PhOLEDs exhibiting better performance with decreased driving voltage, increased power efficiency compared to the traditional ultraviolet-ozone (UV-Ozone) treated ones. Then, the mechanism for the enhanced hole injection is investigated. Better electrode contact is found in sInCl₃ based hole dominated devices. Higher work function (∼0.60 eV) is detected on the sInCl₃-ITO anode and stable InCl bonds are formed on its surface compared to the UV-Ozone treated one according to the photoelectron spectroscopy.     

Collagen network as the scaffold for spontaneously distributed optical resonators

The idea behind this work was to acquire one dimensional lasing in the Rhodamine 6G dye doped collagen fibers with the control of random lasing phenomenon properties by changing the dye molecular arrangement. We show that a simple manipulation of the dye concentration in biopolymeric fibril matrix bulk and an additional use of α-cyclodextrin (α-CD) molecules determine formation of specific dye aggregates and as a consequence the shift of the random lasing emission wavelength in the desired direction. The analysis of the light transport mean free path in function of the dye and (α-CD) concentration was done with the use of coherent back scattering technique.     

Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Here, we report on the effects of channel (or active) layer thickness on the bias stress instability of InGaZnO (IGZO) thin-film transistors (TFTs). The investigation on variations of TFT characteristics under the electrical bias stress is very crucial for commercial applications. In this work, the initial electrical characteristics of the tested TFTs with different channel layer thicknesses (40, 50, and 60 nm) are performed. Various gate bias (V_GS) stresses (10, 20, and 30 V) are then applied to the tested TFTs. For all V_GS stresses with different channel layer thickness, the experimentally measured threshold voltage shift (ΔV_th) as a function of stress time is precisely modeled with stretched-exponential function. It is indicated that the ΔV_th is generated by carrier trapping but not defect creation. It is also observed that the ΔV_th shows incremental behavior as the channel layer thickness increases. Thus, it is verified that the increase of total trap states (N_T) and free carriers resulted in the increase of ΔV_th as the channel layer thickness increases.