High-performance Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics with the triple point composition

Ternary 0.552Pb(Ni_1/3Nb_2/3)O₃-xPbZrO₃-(0.448-x)PbTiO₃ (PNN-PZ-PT) ceramics near the triple point compositions were fabricated by an improved two-step sintering method. The triple point composition 0.552PNN-0.135PZ-0.313PT ceramic has outstanding piezoelectric performance with piezoelectric coefficient d₃₃ = 1200 pC/N. Its easy fabrication and low cost make this piezoelectric material an excellent candidate for high sensitivity sensors and ultrasonic transducers. The evolution of domain structures for ceramics with composition near the triple point provides deeper insight into the mechanism of ultrahigh piezoelectric properties of PNN-PZ-PT ceramics.     

Influence of SiC dispersion and Ba(Sr) substitution on the thermoelectric properties of Ca3Co4O9+δ

Ca₃Co₄O_9+δ is a typical p-type thermoelectric oxide material with a low thermal conductivity. In this study, double-layered oxide samples Ca(Ba,Sr)₃Co₄O_9+δ dispersed with different SiC contents were obtained via the traditional solid phase reaction method. The effects of different elemental substitutions and SiC dispersion contents on the microstructure and thermoelectric properties of the samples were studied. The double optimisation of partial substitution of Ca-site atoms and SiC dispersion considerably improved the thermoelectric properties of Ca₃Co₄O_9+δ. Through the elemental substitution, the resistivity of the Ca₃Co₄O_9+δ material was reduced. Conversely, introducing an appropriate amount of SiC nanoparticles enhanced phonon scattering and was crucial in reducing its thermal conductivity. After double optimisations, the dimensionless thermoelectric figure of merit (ZT) values of both Ca_2.93Sr_0.07Co₄O_9+δ + 0.1 wt% SiC and Ca_2.9Ba_0.1Co₄O_9+δ + 0.1 wt% SiC achieved an optimum value of 0.25 at 923 K.     

基于混合模式快速电荷平衡的神经刺激器

设计实现了一种可用于脊髓神经刺激器的多通道大电流神经刺激器。提出将电极短接和插入短电流脉冲相结合的混合模式,在大电流下,能更加快速地实现电荷平衡。电路设计上,将ADC动态比较器的回踢噪声消除技术应用于神经刺激器,使得动态比较器在输入压差较小时能够输出正确的比较结果,从而将电极上残留电压保持在更安全的范围内。基于CSMC 0.25 μm BCD工艺进行设计与仿真,结果表明,在单向且最大刺激电流为4 mA、刺激脉宽为60 μs、刺激周期为750 μs的条件下,该15 V、16路神经刺激器能实现±50 mV安全电压的有源电荷平衡。     

Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device

Recent device reliability studies on the metal/high-κ device observed the inter-convertible characteristics of the electron trap levels between the shallow and deep defect states under cyclic positive-bias temperature stressing. Although the oxygen vacancy and oxygen interstitial defect, being two typical types of defects in the high-κ oxide, have been criticized as the culprit for the device reliability issue and investigated in many simulations, all results have indicated that the defect levels induced by them were either too shallow or too deep and failed to explain the above experimental observation. Nevertheless, studies on the static characteristics of vacancy-interstitial (V_O-O_i) model showed scattering distributed electron trap levels within the bandgap, making it as a promising defect type that can account for the above experimental observation. In this work, we investigated the dynamic characteristics of the V_O-O_i defect pair under PBTI stress by tuning the relative position of V_O and O_i. Our simulation results show multiple energy barriers for the structure transformation along the O_i migration path, and the charge trap level of the specific defect pair during the O_i migration is shown to be adjustable within the HfO₂ band gap, depending on the O_i positions. These results depict an atomic picture to help us understand the defect electrical behavior under cyclic positive bias stress condition.     

命名实体识别技术综述

命名实体识别是自然语言处理中的热点研究方向之一,目的是识别文本中的命名实体并将其归纳到相应的实体类型中。首先阐述了命名实体识别任务的定义、目标和意义,分析提出了命名实体识别的主要难点在于领域命名实体识别局限性、命名实体表述多样性和歧义性、命名实体的复杂性和开放性;然后介绍了命名实体识别研究的发展进程,从最初的规则和字典方法到传统的统计学习方法再到现在的深度学习方法,不断地将新技术应用到命名实体识别研究中以提高性能;接着系统梳理了当下命名实体识别任务中的若干热门研究点,分别是匮乏资源下的命名实体识别、细粒度命名实体识别、嵌套命名实体识别以及命名实体链接;最后针对评判命名实体识别模型的好坏,总结了常用的若干数据集和实验测评指标,并给出了未来的研究建议。     

Heterobarrier Varactors with Nonuniformly Doped Modulation Layers

Technical Physics Letters - Optimum shape of the capacitance–voltage (C–V) characteristic is a critical parameter determining the efficiency of frequency multiplication in heterobarrier...     

Improving through-thickness conductivity of carbon fiber reinforced polymer using carbon nanotube/polyethylenimine at the interlaminar region

The through-thickness conductivity of carbon fiber reinforced polymer (CFRP) composite was increased by incorporating multiwalled carbon nanotubes in the interlaminar region. Carbon nanotubes (CNTs) were dispersed in a polyethylenimine (PEI) binder, which was then coated onto the carbon fiber fabric. Standard vacuum-assisted resin infusion process was applied to fabricate the composite laminates. This modification technique aims to enhance the electrical conductivity in through-thickness direction for the purpose of nondestructive testing, damage detection, and electromagnetic interference shielding. CNT concentrations ranging from 0 to 0.75 wt% were used and compared to pristine CFRP samples (reference). The through-thickness conductivity of the CFRP exhibited an improvement of up to 781% by adopting this technique. However, the dispersion of CNT in PEI led to a viscosity increase and poor wetting properties which resulted in the formation of voids/defects, poor adhesion (as shown in scanning electron micrographs) and the deterioration of the mechanical properties as manifested by interlaminar shear strength and dynamic mechanical analysis measurements.     

Effect of Electron–Phonon Interaction and γ-Ray Irradiation on the Reverse Currents of Silicon Photodiodes

Semiconductors - The current–voltage characteristics of silicon photodiodes before and after irradiation by γ-quanta with an energy of 1.25 MeV and an irradiation dose of 0.5 mrad are...     

Role of interface on irradiation damage of Cu−diamond composites using classical molecular dynamics simulations

Cu?diamond composites have been proposed as a candidate thermal management material for spacecraft electronics. Nevertheless, irradiation effects on the composites remain poorly understood at present. Here we focus on investigating the influence of Cu?diamond interfaces (CDIs) on energetic displacement cascades using atomistic simulations. Results show that a primary knock-on atom of Cu (PKA-Cu) can induce more significant damage than a PKA-C. Under almost all circumstances, the statistically averaged fraction of surviving interstitials is not only lower than that of vacancies but also no more than 1. Because of the unique nature in the mobility and interactions with CDIs, Cu interstitials exhibit the lowest concentration among all defects in most cases. The high residual rate of displaced defects in diamond makes it relatively difficult to heal. The structural damage is mainly manifested in a short-range disorder of diamond and a long-range disorder of Cu after irradiation. At elevated temperatures, the atomic displacement region may form compact chain-like defects to restrain lattice loosening. Despite the above, CDIs could act as effective sinks to facilitate the recombination and/or annihilation of irradiation-induced defects in all scenarios. This study provides an important insight into the understanding of the microscopic evolution of irradiation defects for the composites.     

Dielectric Properties of Ultrathin CaF2 Ionic Crystals

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF₂) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF₂ shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO₂, TiO₂, and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF₂ is continuous and free of defects over large regions, which prevents the formation of electrically weak spots.