Synergistic regulation of hydrogen adsorption/desorption via dual interfaces of Cu/Ni/Ni(OH)2 toward efficient hydrogen evolution reaction

Nickel-based catalysts have attracted tremendous attention as alternatives to precious metal-based catalysts for electrocatalytic hydrogen evolution reaction (HER) in virtue of their conspicuous advantages such as abundant reserves and high electrochemical activity. Nevertheless, a great challenge for Ni-based electrocatalyst is that nickel sites possess too strong adsorption for key intermediates H1, which severely suppresses the hydrogen-production activities. Herein, we report a hierarchical architecture Cu/Ni/Ni(OH)₂ consisting of dual interfaces as a high-efficient electrocatalyst for HER. The Cu nanowire backbone could provide geometric spaces for loading plenty of Ni sites and the formed Ni/Cu interface could effectively weakened the adsorption intensity of H1 intermediates on the catalyst surface. Moreover, the H1 adsorption could be further controlled to appropriate states by in-situ formed Ni(OH)₂/Ni interface, which simultaneously promotes water adsorption and activation, thus both Heyrovsky and Volmer steps in HER could be obviously accelerated. Experimental and theoretical results confirm that this interface structure can promote water dissociation and optimize H1 adsorption. Consequently, the Cu/Ni/Ni(OH)₂ electrocatalyst exhibits a low overpotential of 20 mV at 10 mA cm^?2 and an ultralow Tafel slope of 30 mV dec^?1 in 1.0 M KOH, surpassing those of reported transition-metal-based electrocatalysts and even the prevailing commercial Pt/C.     

High-performance Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics with the triple point composition

Ternary 0.552Pb(Ni_1/3Nb_2/3)O₃-xPbZrO₃-(0.448-x)PbTiO₃ (PNN-PZ-PT) ceramics near the triple point compositions were fabricated by an improved two-step sintering method. The triple point composition 0.552PNN-0.135PZ-0.313PT ceramic has outstanding piezoelectric performance with piezoelectric coefficient d₃₃ = 1200 pC/N. Its easy fabrication and low cost make this piezoelectric material an excellent candidate for high sensitivity sensors and ultrasonic transducers. The evolution of domain structures for ceramics with composition near the triple point provides deeper insight into the mechanism of ultrahigh piezoelectric properties of PNN-PZ-PT ceramics.     

Influence of SiC dispersion and Ba(Sr) substitution on the thermoelectric properties of Ca3Co4O9+δ

Ca₃Co₄O_9+δ is a typical p-type thermoelectric oxide material with a low thermal conductivity. In this study, double-layered oxide samples Ca(Ba,Sr)₃Co₄O_9+δ dispersed with different SiC contents were obtained via the traditional solid phase reaction method. The effects of different elemental substitutions and SiC dispersion contents on the microstructure and thermoelectric properties of the samples were studied. The double optimisation of partial substitution of Ca-site atoms and SiC dispersion considerably improved the thermoelectric properties of Ca₃Co₄O_9+δ. Through the elemental substitution, the resistivity of the Ca₃Co₄O_9+δ material was reduced. Conversely, introducing an appropriate amount of SiC nanoparticles enhanced phonon scattering and was crucial in reducing its thermal conductivity. After double optimisations, the dimensionless thermoelectric figure of merit (ZT) values of both Ca_2.93Sr_0.07Co₄O_9+δ + 0.1 wt% SiC and Ca_2.9Ba_0.1Co₄O_9+δ + 0.1 wt% SiC achieved an optimum value of 0.25 at 923 K.     

Residual attention-based tracking-by-detection network with attention-driven data augmentation

Tracking-by-detection (TBD) is a significant framework for visual object tracking. However, current trackers are usually updated online based on random sampling with a probability distribution. The performance of the learning-based TBD trackers is limited by the lack of discriminative features, especially when the background is full of semantic distractors. We propose an attention-driven data augmentation method, in which a residual attention mechanism is integrated into the TBD tracking network as supplementary references to identify discriminative image features. A mask generating network is used to simulate changes in target appearances to obtain positive samples, where attention information and image features are combined to identify discriminative features. In addition, we propose a method for mining hard negative samples, which searches for semantic distractors with the response of the attention module. The experiments on the OTB2015, UAV123, and LaSOT benchmarks show that this method achieves competitive performance in terms of accuracy and robustness.     

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity

Silicon - In this fast-growing technological world biosensors become more substantial in human life and the extensive use of biosensors creates enormous research interest among researchers to...     

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights

It is believed that promoting the fraction of ferroelectric orthorhombic phase (o-phase) through O-poor growth conditions can increase the spontaneous polarization of HfO₂ and (Hf,Zr)O₂ thin films. However, the first-principles calculations show that the growth may be limited by the easy formation of point defects in the orthorhombic and tetragonal phases of HfO₂, ZrO₂, and (Hf,Zr)O₂. Their dominant defects, O interstitial (O_i) under O-rich conditions and O vacancy (V_O) under O-poor condition, have low formation energies and quite high density (10¹⁶–10¹⁹ cm⁻³ for 800–1400 K growth temperature). Especially, O_i has negative formation energy in tetragonal HfO₂ under O-rich condition, causing non-stoichiometry and limiting the crystalline-seed formation during o-phase growth. High-density defects can cause disordering of dipole moments and increase leakage current, both diminishing the polarization. These results explain the experimental puzzle that the measured polarization is much lower than the ideal value even in O-poor thin films and highlight that controlling defects is as important as promoting the o-phase fraction for enhancing ferroelectricity. The O-intermediate condition (average of O-rich and O-poor conditions) and low growth temperature are proposed for fabricating HfO₂ and (Hf,Zr)O₂ with fewer defects, lower leakage current, and stronger ferroelectricity, which challenges the belief that O-poor condition is optimal.     

Graphene-Based Heterostructure Composite Sensing Materials for Detection of Nitrogen-Containing Harmful Gases

Graphene-based heterostructure composite is a new type of advanced sensing material that includes composites of graphene with noble metals/metal oxides/metal sulfides/polymers and organic ligands. Exerting the synergistic effect of graphene and noble metals/metal oxides/metal sulfides/polymers and organic ligands is a new way to design advanced gas sensors for nitrogen-containing gas species including NH₃ and NO₂ to solve the problems such as poor stability, high working temperature, poor recovery, and poor selectivity. Different fabrication methods of graphene-based heterostructure composite are extensively studied, enabling massive progress in developing chemiresistive-type sensors for detecting the nitrogen-containing gas species. With the components of noble metals/metal oxides/metal sulfides/polymers and organic ligands which are composited with graphene, each material has its attractive and unique electrical properties. Consequently, the corresponding composite formed with graphene has different sensing characteristics. Furthermore, working ambient gas and response type can affect gas-sensitive characteristic parameters of graphene-based heterostructure composite sensing materials. Moreover, it requires particular attention in studying gas sensing mechanism of graphene-based heterostructure composite sensing materials for nitrogen-containing gas species. This review focuses on related scientific issues such as material synthesis methods, sensing performance, and gas sensing mechanism to discuss the technical challenges and several perspectives.     

The suppression of dark current for achieving high-performance Ga2O3 nanorod array ultraviolet photodetector

Gallium oxide (Ga₂O₃) is a promising candidate for next-generation solar-blind photodetectors (PDs) because of its large bandgap of 4.9 eV. Its single-crystal nanorod structure improves its photoelectric performance, which promotes carrier transformation and separation. However, Ga₂O₃ nanorods fabricated by the hydrothermal method have many oxygen vacancies, which largely enhance the dark current and reduce the on/off ratio of PDs, restricting application of such devices. Therefore, in this paper, dual strategies are applied to reduce the dark current of a metal–semiconductor–metal-structured Ga₂O₃ nanorod PD fabricated by the hydrothermal method. Through these dual strategies, which include annealing treatment and the application of a polymethyl methacrylate (PMMA) coating, the dark current of the PD is reduced from 1.34 × 10^?7 to 2.04 × 10^?9 A at 1 V, resulting in the on/off ratio of the PD reaching as high as 3.24 × 10⁴. Besides, the responsivity and detectivity of the device reach 1.73 A/W and 2.53 × 10¹² Jones respectively, which represents better performance than those of other reported Ga₂O₃ nanorod array PDs. Results have shown that the new strategy adopted can greatly improve the performance of Ga₂O₃-based ultraviolet photodetectors.     

Thermodynamic Properties of Superionic Phase Ag<Subscript>4</Subscript>HgSe<Subscript>2</Subscript>I<Subscript>2</Subscript> Determined by the EMF Method

Triangulation of the Ag-Hg-Se-I system in the vicinity of quaternary phase Ag₄HgSe₂I₂ was performed by differential thermal analysis, X-ray diffraction and electromotive force (EMF) methods. The spatial position of the phase region Ag₄HgSe₂I₂-Se-HgI₂ regarding the figurative point of silver was used to write the chemical reaction of formation of Ag₄HgSe₂I₂. The EMF measurements were carried out by applying an electrochemical cell: (–) C|Ag|Ag₂GeS₃ glass|Ag₄HgSe₂I₂, HgI₂, Se|C (+), where C is graphite and Ag₂GeS₃ glass is the fast purely Ag⁺ ions conducting electrolyte. The linear dependence of the EMF of the electrochemical cell on temperature was used to determine the standard thermodynamic values of Ag₄HgSe₂I₂ for the first time.