布喇格反射型宽带单晶薄膜体声波滤波器

该文研究了一种新型布喇格反射型薄膜体声波(BAW)滤波器的设计方法与制备技术。BAW器件选择机电耦合系数较大的Y43°-铌酸锂(Y43°-LN)单晶薄膜作为压电层材料,并以苯并环丁烯(BCB)作为晶圆键合层,采用离子注入剥离法将亚微米厚度的Y43°-LN单晶薄膜转移至具有布喇格反射层的衬底。BCB既作为键合层,也作为布喇格反射层的第一低声阻抗层,实现了单晶BAW滤波器的制备。设计并制备了三阶BAW滤波器,中心频率为2.93 GHz,绝对带宽和分数带宽分别为247 MHz和8.4%。结果表明,采用薄膜转移技术制备的高机电耦合系数LN单晶薄膜能够实现大带宽BAW滤波器的制备。     

A general procedure for the design of bulk acoustic wave filters

This article presents a procedure for the design of bulk acoustic wave (BAW) filters. The procedure consists of optimizing the modified Butterworth‐Van Dyke model of each resonator, considering appropriate technological parameters. The approach is demonstrated first to design a classical aluminum nitride‐based BAW filter but remains valid for other piezoelectric layers, considering either longitudinal or transverse acoustic wave coupling. The approach is finally applied to the design of a lithium niobate (LiNbO₃) BAW filter for wide‐band filtering applications. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Integrated approach to electrode and AlN depositions for bulk acoustic wave (BAW) devices

This paper investigates the (002) texture of AlN films deposited by reactive pulsed direct current sputtering on Al, Al–Cu, W and Mo metal electrodes. X-Ray diffraction and atomic force microscopy studies show that the AlN texture is dependent on the deposition conditions and nature of the underlayers. A smooth underlayer with a sharp texture represents the best combination of properties. AlN films with a full width at half maximum less than 1.5 have been deposited on the electrodes studied. It is also possible to deposit well-textured electrodes with a roughness less than 2.5 nm.     

Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long‐Term Evolution band‐7 duplexer should be designed to prevent the co‐existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice‐ and ladder‐type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance‐to‐unbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as 2.0 mm × 1.6 mm. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to ?16.9 ppm/°C.     

声体波延迟线在电子战中的应用

讨论了用声体波延迟线实现准相干诱饵的一种方式,阐述了其对声体波延迟线的参数要求。     

基于改进人工蜂群算法的体声波滤波器自动布局

针对体声波（BAW）滤波器布局中芯片面积利用率低、设计周期长、制造成本高等问题,提出了一种基于改进人工蜂群算法的BAW滤波器自动布局方法。首先构建了自动布局的评价模型,通过结合利用圆形容器的顺序布局和基于旋转角度编码的聚拢布局来简化自动布局的难度;同时采用了一种改进人工蜂群算法去搜寻BAW滤波器的最优顺序布局和聚拢布局方案;最后,结合多组BAW滤波器的设计案例验证自动布局算法的有效性,其布局有效面积占比提升约17%,整体布局呈方形,且完成滤波器的自动布局仅需30 min。结果表明在保证BAW滤波器性能的前提下,算法可有效提升芯片面积利用率、大幅缩减滤波器的设计周期。     

基片开槽抑制SAW滤波器体声波的工艺研究

当叉指换能器在基片上激励声表面波模式时，同时伴随着体声波的激励。文章根据叉指换能器的激励原理，采取对压电基片背面开槽抑制叉指换能器体声波进行了实验研究。分别在ST、LT、LN压电基片上背面开槽并制作了中心频率为28MHz、70MHz、71MHz、120MHz声表面波滤波器。实验观察了体声波的抑制情况，并得出了具体实验数据。     

微波体声波延迟线的电磁屏蔽

本文分析了微波体声波延迟线多层介质的电磁屏蔽效应，结果表明，全屏蔽方式可以有效地解决微波延迟线研制中的直通抑制问题。实验结果证实了理论分析。     

纳米晶PZT薄膜叠层型体声波滤波器的研究

设计了一个以纳米晶PZT为压电薄膜的叠层型体声波滤波器（SCFBAF）,并在ANSYS11．0中用3D有限元方法对其幅频特性进行仿真与研究,实验结果表明,该SCFBAF工作在682．64MHz时带宽约为280kHz,1781．36MHz时约为320kHz,能满足高工作频率、窄带宽的需要。相比传统滤波器,该种SCFBAF具有可集成和低功耗等优点,将在下一代无线通信射频前端系统中发挥重要作用。     

Porous silicon bulk acoustic wave resonator with integrated transducer

ABSTRACT: : We report that porous silicon acoustic Bragg reflectors and AlN-based transducers can be successfully combined and processed in a commercial solidly mounted resonator production line. The resulting device takes advantage of the unique acoustic properties of porous silicon in order to form a monolithically integrated bulk acoustic wave resonator.