Characterization of CdTe and HgCdTe by Photo-Thermal Excitation Spectroscopy

We report an infrared photo-thermal excitation imaging and spectroscopy study of CdTe and CdZnTe substrates as well as HgCdTe/CdZnTe and HgCdTe/Si epilayers. The applicability, advantages, and limitations of the technique as a tool for both ex situ and in situ monitoring of bandgap, thickness, and growth temperature are discussed. We show that photo-thermal imaging allows for direct visual imaging of the bandgap region of CdTe and CdZnTe substrates. We also show that photo-thermal spectroscopy can provide epilayer thickness information independent of the dielectric function. The method is orthogonal to existing optical characterization techniques and could be combined with them for improved accuracy.     

Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors

CdZnTe (CZT) capacitive Frisch grid detectors can achieve a higher detecting resolution.The anode structure might have an important role in improving the weighting potential distribution of the detectors.In this paper,four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation,based on a 3-dimensional weighting potential analysis.The weighting potential distributions in modified anode devices (Model B,C and D) are optimized compared with a square device (Model A).In model C and D,the abrupt weighting potential can be well modified.However,with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D,the weighting potential does not vary too much.     

溅射功率对Au与CdZnTe晶体接触结构和性能的影响

采用直流磁控溅射工艺,以Au为靶材在高阻半导体CdZnTe上制备导电薄膜.系统地研究了溅射功率对沉积速率、薄膜结构、组织形貌及接触性能的影响.结果表明,随溅射功率的增加沉积速率增大.I-V测试表明在高阻CdZnTe上溅射Au薄膜后不经热处理已具有良好的欧姆接触性能,溅射功率为100 W时的接触性能好于功率为40 W和70 W时的接触性能.     

碲锌镉晶体定向研究

碲锌镉材料是制备高性能碲镉汞红外焦平面探测器不可或缺的衬底材料.液相外延工艺和分子束外延工艺分别需要使用(111)晶面和(211)晶面碲锌镉衬底制备碲镉汞薄膜材料.低偏角、高精度衬底的选取有利于高质量碲镉汞外延层的获得.介绍了孪晶线快速定向法、使用X射线衍射仪(X-Ray Diffractome-ter,XRD)定向法...     

(111)晶向碲锌镉晶片双面腐蚀的对比

通过对材料减薄，并采用红外透射显微镜观察的手段，实现了对A面和B面腐蚀坑的同时观察.结果发现采用标准腐蚀剂在同一晶片的（111) A和（111) B面上形成的腐蚀坑大都不存在对应关系，深度腐蚀的实验也发现，表面腐蚀坑所对应的缺陷只局限于10μm的表层内，这表明大部分腐蚀坑所对应的不是通常认为的穿越位错. 进一步分析的结果表明，不同腐蚀剂形成的腐蚀坑所对应的缺陷有可能是不同类型的位错，甚至也可能起源于微沉淀物，通常将碲锌镉材料的腐蚀坑所对应的缺陷简单地归结为材料的位错是缺乏实验依据的.     

降温速率对CdZnTe晶体内Te夹杂相的影响

采用改进的垂直布里奇曼生长法生长CdZnTe(CZT)单晶。生长完成后,选取了10~60 K/h不同速率降温处理。采用红外透射显微镜和多道能谱仪分别测试不同降温速率的晶片内部Te夹杂相分布和能谱响应。结果表明,10~30K/h之间的慢速降温会导致晶体内部出现较大尺寸的Te夹杂(>10μm),40 K/h以上的快速降温所得到的晶体内部主要以小尺寸(<10μm)为主。同时快速降温会导致晶体内部的Te夹杂浓度大量增加,并且降温速率越快,Te夹杂浓度越大。此外,降温速率过慢所得到晶片的能谱分辨率较差,但是降温速率过快也会影响到晶片的性能。40 K/h的降温速率所得到的晶片能谱性能较好,实验结果表明:大尺寸或者高浓度的Te夹杂都不利于能谱响应,保留一定浓度的小尺寸Te夹杂的晶体能谱性能较佳。     

Photoluminescence measurements on undoped CdZnTe grown by the high-pressure bridgman method

The low temperature photoluminescence of Cd_0.91Zn_0.09Te grown by the high-pressure Bridgman (HPB) method exhibits a neutral donor bound exciton emission (D⁰X) at 1.65603 eV with its excited state (D⁰X^*) at 1.65798 eV and neutral acceptor bound exciton emissions (A⁰X) at 1.64566 eV and 1.65201 eV. Assuming a direct generation and subsequent relaxation of excitons at the D⁰X^* state, we demonstrate that the temporal evolution of the above emission bands is well reproduced by a set of rate equations. The resultant radiative-lifetime of 1.4 ns for the D⁰X and 1.5 and 2.0 ns for the A⁰Xs are compared with various CdZnTe's (CZTs) grown by the other methods to demonstrate the particular nature of the HPB CZT.     

Improved morphology and crystalline quality of MBE CdZnTe/Si

We report on continuing efforts to develop a reproducible process for molecular beam epitaxy of CdZnTe on three-inch, (211) Si wafers. Through a systematic study of growth parameters, we have significantly improved the crystalline quality and have reduced the density of typical surface defects. Lower substrate growth temperatures (∼250–280°C) and higher CdZnTe growth rates improved the surface morphology of the epilayers by reducing the density of triangular surface defects. Cyclic thermal annealing was found to reduce the dislocation density. Epilayers were characterized using Nomarski microscopy, scanning electron microscopy, x-ray diffraction, defect-decoration etching, and by their use as substrates for HgCdTe epitaxy.     

用于医学成像的碲锌镉单极型探测器的研究进展

碲锌镉(CdZnTe)半导体材料具有探测效率高、能量分辨率高和体积小重量轻的特点,是公认的最有希望成为下一代伽马射线探测装置的材料。然而,空穴俘获导致的电荷收集不完全限制了碲锌镉半导体探测器的性能。解决空穴俘获最有效的方法是单极型探测器技术。文章首先简要介绍半导体探测器中电荷收集的相关理论,然后重点阐述单极型探测器技术的实现方法,包括各种电极的结构设计原理、典型的探测器原型机介绍、性能特点及其结构设计的优缺点。最后简要展望了碲锌镉半导体探测器未来的发展方向。     

Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

In this paper, we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength infrared (MWIR) band. High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on CdZnTe and CdTe/Ge substrates. Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results and dislocation density measurements are exposed in detail. These characterizations show some striking differences between structures grown on the two kinds of substrates. Device processing and readout circuit for 128×128 focal-plane array (FPA) fabrication are described. The electro-optical characteristics of the devices show that devices grown on Ge match those grown on CdZnTe substrates in terms of responsivity, noise measurements, and operability.