Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

The distributions of Ti³⁺ and Ti⁴⁺ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti⁴⁺ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.     

掺铥氟化钇钡晶体的生长和光谱性能

采用提拉法生长了掺铥氟化钇钡（Tm3＋：BaY2F8,Tm：BYF）激光晶体。通过X射线衍射和光谱测试研究了晶体的相组成和光谱特征。结果表明：晶体属于单斜晶系,空间群C2/m,计算的晶胞参数：a=0.699 28 nm,b=1.052 93 nm,c=0.427 51 nm,β=99.69°。在吸收光谱中,室温下791...     

Polarized spectroscopic properties of Ho-doped LuLiF4 single crystal for 2 μm and 2.9 μm lasers

Polarized spectroscopic properties of a Ho³⁺-doped LuLiF₄ (Ho:LuLF) single crystal grown by the Czochralski method have been investigated as a promising material for 2 μm and 2.9 μm lasers. The Judd-Ofelt (J-O) model has been applied to the analysis of the polarized room temperature absorption spectra to establish the so-called J-O intensity parameters. Based on the calculated parameters, we determined the emission probabilities, branching ratio and radiative lifetime for the Ho³⁺ transitions from the excited state manifolds to the lower-lying manifolds. Ho:LuLF crystal shows long fluorescence lifetime of ⁵I₇ manifold (16 ms) and broad absorption and emission spectra, which exhibit strong polarization characteristics. Stimulated emission cross-sections spectra of the ⁵I₆ → ⁵I₇ and ⁵I₇ → ⁵I₈ transitions were derived and compared with those of the other well-known Ho³⁺-doped laser crystals.     

Nd: Bi4Ge3O12 crystal growth by czochralski method

Nd-doped Bi₄Ge₃O₁₂ (Nd:BGO) crystals were successfully grown in the auto-diameter control system equipped with a frequency weighing sensor with the Czochralski method. The Nd³⁺ ion doping level was varied from 0.25 to 2.5 at.%. The crystals were transparent and of light purple color, with a typical size of about 20 mm in diameter and 50 mm in length. The effective distribution coefficient (k_eff) of Nd³⁺ ion was about 0.957 irrespective of concentration, and the Nd³⁺ ions were distributed homogeneously throughout the crystal. The doping concentration (p_i) of active ion in Nd:BGO crystal was 2.54x10²⁰ ions/cm³, which is higher than that in the Nd:YAG crystal. Therefore, the Nd:BGO crystal was judged to be more suitable for the laser diode pumping microchip laser material where size reduction was desirable.     

不同Li/Nb摩尔比In:Fe:LiNbO3晶体的生长及其光学性能

在LiNbO3(LN)中掺摩尔分数为1%的In和掺质量分数为0.03%的Fe,用提拉法技术生长具有不同n(Li)/n(Nb)[n(Li)/n(Nb)=0.94,1.05,1.20,1.38]的In:Fe:LN晶体.测试不同n(Li)/n(Nb)的In:Fe:LN晶体的吸收光谱、抗光致散射能力和指数增益系数,并计算晶体的有效载流子浓度.结果表明:晶体样品随着n(Li)/n(Nb)增加,吸收光谱的吸收边发生紫移,抗光致散射能力增加,指数增益系数和有效载流子浓度增大.采用n(Li)/n(Nb)=1.38的In:Fe:LN晶体作记录介质,n(Li)/n(Nb)=1.05的In:Fe:LN晶体作位相共轭镜进行全息关联存储实验.实验表明:存储系统具有实时处理,成像质量好,信噪比高和能反复使用等优点.     

不同Li/Nb摩尔比In∶Fe∶LiNbO_3晶体的生长及其光学性能

在Li NbO3(LN)中掺摩尔分数为1%的In和掺质量分数为0.03%的Fe,用提拉法技术生长具有不同n(Li)/n(Nb)[n(Li)/n(Nb)=0.94,1.05,1.20,1.38]的In∶Fe∶LN晶体。测试不同n(Li)/n(Nb)的In∶Fe∶LN晶体的吸收光谱、抗光致散射能力和指数增益系数,并计算晶体的有效载流子浓度。结果表明晶体样品随着n(Li)/n(Nb)增加,吸收光谱的吸收边发生紫移,抗光致散射能力增加,指数增益系数和有效载流子浓度增大。采用n(Li)/n(Nb)=1.38的In∶Fe∶LN晶体作记录介质,n(Li)/n(Nb)=1.05的In∶Fe∶LN晶体作位相共轭镜进行全息关联存储实验。实验表明存储系统具有实时处理,成像质量好,信噪比高和能反复使用等优点。     

Recent progress of crystal growth modeling and growth control

With the rapid growth of electronic and optoelectronic industry, the demand for crystal materials increased dramatically for the past two decades. The requirement for better, cheaper, and larger single crystals has driven extensive research and development in crystal growth. To understand the interplay of associated transport processes and phase transformation, as well as to provide a design basis, crystal growth modeling is becoming more important in both fundamentals and practice. In this article, we review some recent progress of numerical modeling in crystal growth through three subjects: (1) hot-zone design, (2) active growth control, and (3) morphological simulation. Examples are given through our research results in recent years. For better illustration and process understanding some visualization results using transparent materials are given. The needs and the challenges ahead for crystal growth modeling are also discussed.     

Ce:LuAlO3晶体的热稳定性研究

铈掺杂铝酸镥(Ce:LuAlO3)晶体是一种具有钙钛矿结构的新型无机闪烁体.用提拉法试图从n(Lu2O3):n(Al2O3)=1:1的熔体中生长Ce:LuAlO3晶体.实验表明:在缓慢结晶条件下得到的不是Ce:LuAlO3晶体,而是镥铝石榴石[Lu3Al2(AlO4)3].只有急速降温才能够获得Ce:LuAlO3晶体.退火和差热分析表明:Ce:LuAlO3晶体只存在于高温条件下,当温度下降时,它会分解成Lu3Al2(AlO4)3,Lu4Al 2O9和Lu2O3.造成LuAlO3晶体在低温下结构不稳定的原因是Lu离子的半径太小,它只适应于配位数是8的石榴石结构,只有在高温下才能适应配位数是12的钙钛矿结构.     

Mg:Ce:Fe:LiNbO3晶体生长及其全息存储性能

在同成分LiNbO3(LN)中,掺入MgO的摩尔分数分别为0,2%,4%,6%,掺入(质量分数)0.1?O2和0.08?2O3,采用提拉法生长了优质的Mg:Ce:Fe:LN晶体.检测了Mg:Ce:Fe:LN晶体的红外透射光谱和光损伤阈值.结果表明:6%Mg:0.1?:0.08?:LN晶体的OH-振动吸收峰紫移到3 532cm-1,其光损伤阈值比Ce:Fe:LN晶体提高2个数量级以上.用二波耦合光路测试晶体的衍射效率,写入时间和擦除时间.计算了光折变灵敏度和动态范围.结果表明:Mg:Ce:Fe:LN晶体全息存储性能优于Fe:LN晶体和Ce:Fe:LN晶体.以4%Mg:0.1?:0.08?:LN晶体作为全息记录材料,实现了总存储页面为3 200幅图像的存储,再现图像清晰完整.     

In:Fe:LiNbO_3晶体波导基片光折变性能的研究

采用Czochralski技术生长了掺In摩尔分数分别为1%,2%和3%的In∶Fe∶LiNbO3晶体。测试In∶Fe∶LiNbO3晶体的红外光谱发现:3%In∶Fe∶LiNbO3晶体的OH-吸收峰由Fe∶LiNbO3晶体的3484cm-1位移到3507cm-1。首次以全息法研究了In∶Fe∶LiNbO3晶体波导基片光折变灵敏度。研究表明:晶体波导基片的光折变灵敏度大小顺序为Fe∶LiNbO3>1%In∶Fe∶LiNbO3>2%In∶Fe∶LiNbO3>3%In∶Fe∶LiNbO3。采用锂空位模型讨论了3%In∶Fe∶LiNbO3晶体OH-吸收峰位移的机理。讨论了In∶Fe∶LiNbO3晶体波导基片光折变灵敏度减弱和抗光折变能力增强的机理。