排序方式: 共有24条查询结果,搜索用时 15 毫秒
1.
空间遥感用近红外InGaAs焦平面组件 总被引:4,自引:1,他引:3
介绍了InGaAs PIN探测器的结构和主要性能指标,综述了InGaAs探测器的研究进展,特别是我国空间遥感用高均匀性长线列InGaAs焦平面组件的关键技术和主要性能结果.近年来,我国空间遥感用InGaAs得到了较快发展,研制出光谱响应为0.9~1.7μm的正照射和背照射256×1元InGaAs线列焦平面组件,室温下其峰值响应率分别为7.8×1011cm·Hz1/2/W和4.5×1011 cm·Hz1/2/W,而且利用正照射256×1元InGaAs线列焦平面组件实现了扫描成像,图像清晰.此外,研制了光谱响应延展至2.4μm的256×1元InGaAs线列平面组件,其室温下峰值探测率为2.5×1010cm·Hz1/2/W.这些研究结果为下一步更长线列焦平面组件的研制提供了坚实的基础,同时器件的性能需要进一步提高,以满足空间遥感应用的要求. 相似文献
2.
A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays 总被引:2,自引:0,他引:2
S. Terterian M. Chu S. Mesropian H. K. Gurgenian M. Ngo C. C. Wang 《Journal of Electronic Materials》2002,31(7):720-725
Short-wave infrared (SWIR) HgCdTe focal-plane arrays (FPAs) with a cutoff wavelength of 2.5 μm have been produced using both
planar ion-implanted and heterojunction-mesa device structures. The two-dimesnional FPAs are comprised of a 320×256 format
with 30-μm pixel pitch and are cooled by a multistage thermo-electric (TE) cooler. Measured R0A values of the two types of device structures show similar results below about 130 K because of the performance-limiting
effect of the surface passivation of the heterojunction. However, a substantial difference is seen above 130 K and up to 300
K between the two structures types, with the heterojunction-mesa p-on-n device having an order of magnitude higher R0A value than the planar ion-implanted n-on-p configuration. The difference in the R0A values is reflected in the FPA images of the two different device types, where at 200 K, both FPAs display a clear picture
with the n-on-p implanted device having a somewhat lesser resolution. However, no image can be seen from the planar-implanted
FPA at 300 K, whereas the heterojunction-mesa FPA still exhibits a notable image at this temperature. These differences are
examined and are attributed largely to higher diffusion and generation-recombination (g-r) currents that are thought to be
prevalent in the ion-implanted n-on-p device structure. Yet, baking studies carried out show the ion-implanted diodes to be
slightly more robust, as experiments reveal that they tend to survive a 120°C heat treatment longer than the mesa devices,
which tend to degrade after a certain period of time. The nature of n-type donors in ion-implanted diodes is discussed, and
a new theory based on Te antisites is proposed to explain recent experimental findings. 相似文献
3.
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications 总被引:1,自引:0,他引:1
T. J. de Lyon R. D. Rajavel J. A. Vigil J. E. Jensen O. K. Wu C. A. Cockrum S. M. Johnson G. M. Venzor S. L. Bailey I. Kasai W. L. Ahlgren M. S. Smith 《Journal of Electronic Materials》1998,27(6):550-555
Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance
at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si via
CdTe(112)B buffer layers, whose structural properties include x-ray rocking curve full width at half maximum of 63 arc-sec
and near-surface etch pit density of 3–5 × 105 cm−2 for 9 μm thick CdTe films. HgCdTe p+-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths
ranging from 3.5 to 5 μm. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum
interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors on CdZnTe and
Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the
I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited
current model for temperatures down to 110K. The performance of MBE-grown diodes on Si is also equivalent to that of typical
liquid phase epitaxy-grown devices on CdZnTe with R0A products in the 106–107 Θ-cm2 range for 3.6 μm cutoff at 125K and R0A products in the 104–105 Θ-cm2 range for 4.7 μm cutoff at 125K. 相似文献
4.
Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays 总被引:2,自引:0,他引:2
P. Ferret J. P. Zanatta R. Hamelin S. Cremer A. Million M. Wolny G. Destefanis 《Journal of Electronic Materials》2000,29(6):641-647
This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy
(MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques
that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on
runs of more than 15 consecutively grown layers. Etch pit density in the low 105 cm−2 and void density lower than 103 cm−2 are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 1014 to 1015 cm−3 range and mobility in excess of 105 cm2/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present
dynamic resistance area products which reach values of 8 103 Ωcm2 for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating
at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value
of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition
of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent
and can be independently addressed. Current voltage curves of 60 × 60 μm2 photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1
and 5 μm for the MWIR-2. 相似文献
5.
M. F. Vilela A. A. Buell M. D. Newton G. M. Venzor A. C. Childs J. M. Peterson J. J. Franklin R. E. Bornfreund W. A. Radford S. M. Johnson 《Journal of Electronic Materials》2005,34(6):898-904
Middle wave infrared (MWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been
grown on 100-mm Si (112) substrates by molecular beam epitaxy (MBE) for large format 2,560×512 focal plane arrays (FPAs).
In order to meet the performance requirements needed for these FPAs, cutoff and doping uniformity across the 100-mm wafer
are crucial. Reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS), Fourier transform
infrared spectrometry (FTIR), x-ray, and etch pit density (EPD) were monitored to assess the reproducibility, uniformity,
and quality of detector material grown. Material properties demonstrated include x-ray full width half maximum (FWHM) as low
as 64 arc-sec, typical etch pit densities in mid-106 cm−2, cutoff uniformity below 5% across the full wafer, and typical density of macrodefects <1000 cm−2. The detector quality was established by using test structure arrays (TSAs), which include miniarray diodes with the similar
pitch as the detector array for easy measurement of critical parameters such as diode I-V characteristics and detector quantum
efficiency. Typical I-V curves show excellent R0A products and strong reverse breakdown characteristics. Detector quantum efficiency was measured to be in the 60–70% range
without an antireflection coating. 相似文献
6.
文中讨论了红外成像寻的器用红外焦平面探测器的工作波段、阵列结构、规模、相对孔径等问题,提出双色凝视红外焦平面探测器设计的基本要求: (1)波长组合以相邻波段为宜;(2)双色FPA以叠层结构的凝视型为宜; ( 3)通过限制红外成像传感器的视场,将双色凝视FPA的规模控制在320 ×256以下为宜; (4)在探测元尺寸50μm ×50μm时,中波/长波双色凝视FPA的F数以1~2. 44为宜。 相似文献
7.
红外焦平面器件的研制与展望 总被引:3,自引:2,他引:1
从焦平面器件研制的角度出发,分析了焦平面技术的现状和发展趋势,认为红外焦平面的难点在于大规模,高均匀性,高性能的红外探测器阵列的制造,同时强调了材料,杜瓦瓶,致冷器,读出电路等关键技术在加速焦平面器件研制中所起的重要作用。 相似文献
8.
报道了用 MBE方法生长掺 In N型 Hg Cd Te材料的研究结果。发现 In作为 N型施主在 Hg Cd Te中的电学激活率接近 1 0 0 % ,其施主电离激活能至少小于 0 .6me V。确认了在制备红外焦平面探测器时有必要将掺杂浓度控制在约 3× 1 0 1 5cm- 3水平。比较了高温退火前后 In在 Hg Cd Te中的扩散行为 ,得出在 40 0°C温度下 In的扩散系数约为 1 0 - 1 4cm2 / sec,确认了 In原子作为 Hg Cd Te材料的 N型掺杂剂的可用性和有效性 相似文献
9.
本文基于长波InAs/GaSb Ⅱ类超晶格红外焦平面阵列(Focal Plane Array,FPA)设计和生长了由ZnS和Ge组成的多层薄膜结构。与没有多层薄膜的FPA相比,多层薄膜使其响应峰位置从8.7μm和10.3μm分别移动到9.8μm和11.7μm,50%响应截止波长从11.6μm移动至12.3μm,并且在波长为12μm处的响应强度增加了69%。总之,优化的多层薄膜可以调控FPA的响应波长,这为实现更高灵敏度和更高成像能力的长波红外探测提供了更好的平台。 相似文献
10.
64×64元GaAs/AlGaAs多量子阱长波红外焦平面研制 总被引:9,自引:2,他引:7
报道了64×64 元GaAs/AlGaAs 多量子阱凝视型红外焦平面的研制,器件的平均响应率为RP= 7.24×105V/W,器件的平均黑体探测率为Db = 5.40×108cm ·Hz1/2/W ,峰值波长为λP= 8.2μm ,不均匀性小于20% ,并应用研制成的器件获得了室温物体的热像图 相似文献