VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.     

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

柔性砷化镓太阳电池

介绍了柔性砷化镓太阳电池的基本结构;分析了柔性砷化镓太阳电池的制备工艺,即在Ga As衬底上生长一层牺牲层,再在牺牲层上生长Ⅲ-Ⅴ族太阳电池,最后使用选择性高的腐蚀液将牺牲层腐蚀掉,得到薄膜太阳电池以及可重复使用的衬底,以期达到提高太阳电池功率质量比和降低生产成本的目的;对电池有待于进一步研究的问题进行了展望。     

一种基于基板缺陷的共面波导电磁带隙结构

提出了一种通过湿法腐蚀实现的基板缺陷共面波导电磁带隙结构,并进行了建模仿真、加工和测试.重点研究了基板缺陷结构与传统金属缺陷结构的差异,以及采用湿法腐蚀工艺的优势.实验结果显示:新结构具有明显的电磁带隙特性;与干法刻蚀工艺相比,采用湿法腐蚀工艺加工可以获得更宽的阻带范围和更强的阻带抑制.该结构完整保留了50 Ω共面波导的信号线和接地板金属,可以与传统的金属缺陷结构结合,以获得性能更好的器件.     

基于倒扣技术的190~225 GHz肖特基二极管高效率二倍频器

基于分立式GaAs肖特基势垒二极管,研制出了190～225 GHz高效率二倍频器.50 μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6％,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190～225 GHz,测得倍频效率典型值为7.5％;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平.     

Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector

We present a numerical characterization of a high‐speed high‐responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metal–semiconductor–metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high‐speed optoelectronic applications. Copyright © 2015 John Wiley & Sons, Ltd.     

用于毫米波段行波管的可调预失真器

提出了满足行波管功率放大器(TWTA)要求的毫米波段的可调预失真线性化器,该预失真器基于90°定向耦合器、GaAs肖特基二极管、微带线和负载电阻,产生预失真信号。通过调节GaAs肖特基二极管的偏置电压、微带线电长度及负载电阻可以得到不同的增益扩展和相位扩张效应,在频率为29 GHz~31 GHz和额定输入功率范围内,增益扩展范围为5 dB~11.5 dB,相位扩张范围为35°~65°。仿真及实测结果表明:该预失真电路可调性强,满足通信工程TWTA的补偿需求。     

基于压缩传感和加权主色的镜头边界检测算法

针对现有算法存在计算量大、对摄像机和物体运动 敏感等缺点,提出一种基于压缩传感(CS)和加权主色(WMC)的镜头边界检测(SBD)算法(CSWMC )。首先通过直方图特征得到粗略的镜头 边界集合;然后利用CS将该集合中的帧及其前后帧的高维特征投影到低维空间,采用调节余 弦相似度得到基 于夹角的第一判定指标;继而定义一种新的图像主色权值和基于该权值的类Bhattacharyya 相似度,得到基于颜色 相似度的第二判定指标;以两种判定指标的乘积作为最终判定指标,并设计一种朴素但有效 的策略进行SBD。 实验结果表明,与常用方法相比,所提算法具有更高的查全率和精确率,能够更加有效进行 SBD。