InAs/GaSb超晶格中波焦平面材料的分子束外延技术

报道了InAs/GaSb超晶格中波材料的分子束外廷生长技术研究.通过改变GaSb衬底上分子束外延InAs/GaSb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配△a/a=1.5×10-4,原子级平整表面的InAs/GaSb超晶格材料,材料77 K截止波长为4.87 μm.     

不同晶向GaSb晶片表面化学组分及形貌分析

对相同条件下制备的不同晶向的锑化镓抛光晶片表面化学组分进行了XPS测试比较,结果表明(110)GaSb晶片表面的氧化程度最为严重,表面极为粗糙;有极性的(111)GaSb晶面由于Ga-Sb价键存在于衬底内部,反而氧化程度较低,表面较光滑.分析比较了GaSb晶面表面化学组分与形貌的关系.     

不同Zn含量的GaSb热电半导体及其性能

采用放电等离子烧结法(SPS)制备了四种不同Zn含量的GaSb热电半导体(分别是GaSb,Zn0.9Ga2.1Sb2,ZnGa2Sb2和Zn1.1Ga1.9Sb2),并分析研究其热电性能。结果表明:加Zn后虽然GaSb的Seebeck系数大幅度降低,但电导率提高了约两个数量级,热导率也得以降低,最终热电性能明显提高。在713K时Zn1.1Ga1.9Sb2的最大ZT值达到0.11,比本征GaSb的ZT值提高了近6倍。     

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode. Unlike the traditional tetragonal distortion approach, strain due to the lattice mismatch is spontaneously relieved at the heterointerface in this growth. The complete and instantaneous strain relief at the GaSb/GaAs interface is achieved by the formation of a two-dimensional Lomer dislocation network comprising of pure-edge (90°) dislocations along both [110] and [1-10]. In the present analysis, structural properties of GaSb deposited using both IMF and non-IMF growths are compared. Moiré fringe patterns along with X-ray diffraction measure the long-range uniformity and strain relaxation of the IMF samples. The proof for the existence of the IMF array and low threading dislocation density is provided with the help of transmission electron micrographs for the GaSb epitaxial layer. Our results indicate that the IMF-grown GaSb is completely (98.5%) relaxed with very low density of threading dislocations (10⁵ cm⁻²), while GaSb deposited using non-IMF growth is compressively strained and has a higher average density of threading dislocations (>10⁹ cm⁻²).     

InAs/GaSb超晶格红外探测器台面湿法腐蚀研究

研究了不同腐蚀体系对InAs/GaSb超晶格材料台面的刻蚀,并从中选择了由氢氟酸、酒石酸和双氧水构成的酒石酸腐蚀体系。该体系较适合InAs/GaSb超晶格材料的刻蚀,刻蚀速率稳定,下切效应小。进一步研究发现当HF达到一定浓度后不再影响刻蚀速度;在较低的酒石酸和双氧水浓度下,刻蚀速度是由氧化过程控制,且反应速度和双氧水的浓度成正比。腐蚀液配比为酒石酸(3.5g)∶H2O2(4mL)∶HF(1mL)∶H2O(400mL),刻蚀速度约为0.5μm/min。     

Performance of a mesoscale liquid fuel‐film combustion‐driven TPV power system

Combustion‐driven thermophotovoltaic (TPV) systems have obtained increasing attention in recent decades, but most studies have focused on developing narrowband photovoltaic cells and selective emitters. In terms of the heat source, conventional combustion configurations and light gaseous fuels are extensively utilized in macro‐ or meso‐scale TPV power systems to simplify thermal management and mechanical fabrication. As far as miniaturization is concerned, however, fuelling these systems with liquid hydrocarbons would provide inherent advantages of high energy density and low volatility. Liquid fuels also promise easy and safe fuel recharging for small‐scale power systems. In this paper, a central porous‐medium combustor was employed in a small scale TPV power system. The combustor incorporated an emitting chamber wall and a heat recuperator. The radiant efficiency and overall efficiency were compared using different liquid hydrocarbon fuels in the system. The electric output characteristics of the combustion driven TPV system have been investigated to demonstrate the feasibility of a GaSb cell‐based TPV power system and to provide design guidance for mesoscale liquid‐burning TPV systems. Copyright © 2008 John Wiley & Sons, Ltd.     

Al_xGa_(1-x)As_ySb_(1-y)/GaSb的LPE生长与性质研究

在GaSb衬底上用LPE法生长了晶格匹配的AlGaAsSb外延层。用室温光致发光和X射线双晶衍射分别测量了材料的禁带宽度和晶格常数,并与用内插法计算的结果进行了比较。用C-V和van der Pauw法测量了样品的电学参数。用激光喇曼散射和低温光致发光研究了材料的光学性质,观察到了类GaSb的LO模和类AlSb的LO模以及LO声子与等离子激元的耦合模L_-;对x=0.2,y=0.025的样品,由低温到室温的变温光致发光测量确定的禁带宽度的温度系数为-3.2×10~(-4)eV/K。此外对于晶格失配,P型的原因以及PL谱峰的展宽等问题进行了讨论。     

nBn型InAs/GaSb Ⅱ类超晶格红外探测器光电特性研究

设计了nBn结构的InAs/GaSb II类超晶格红外探测器,从理论和实验两方面对nBn器件的暗电流特性进行了研究,研究结果表明:理论计算的暗电流和实际测试结果趋势一致。另外,研制了p-i-n结构器件并与nBn器件进行了比较,测试结果显示:在77 K温度下,nBn器件的暗电流要比p-i-n器件暗电流小2个量级。温度升高到150 K时,nBn器件暗电流变大2个量级,而p-i-n器件暗电流变大4个量级;nBn器件峰值探测率下降到1/5,p-i-n器件峰值探测率下降2个量级。可见nBn器件适合高温工作,适合高性能红外焦平面探测器的研制。     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from theC-V characteristics. Layers grown from antimony rich melts always exhibitp-type conductivity. In contrast, a type conversion fromp- ton- was observed in layers grown from gallium rich melts below 400 C. The electron mobility of undopedn-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated. Paper presented at the poster session of MRSI AGM VI. Kharagpur. 1995