Design of switchable band‐notched frequency selective absorber

An active band‐notched frequency selective absorber (BNFSA) with switchable notch band is proposed in this article. The BNFSA is a two‐layer structure composed of a lossy layer at the top and a ground plane at the bottom, separated by an air spacer. The element of the lossy layer is a lumped‐resistor‐loaded metallic dipole with a parallel LC resonance structure, which is realized by complementary n‐shaped resonator (CnR) inserted in the center, and PIN diode is welded at two arms of CnR. The bias circuit printed on the back of the substrate of the lossy layer connects to anode and cathode of the diode by via hole and isolates by the inductor. Simulation results show that the notch bands are located at 4.50 and 6.81 GHz when the diode sets to ON and OFF, respectively. To validate the performance of switchable BNFSA, the prototypes are fabricated and measured, reasonable agreement between simulated and measured results is obtained.     

An integrated method based on energy concentration for evaluating normally distributed spectra in the visible region

This work proposes a method to scientifically quantify the quality of normally distributed visible spectra from the viewpoint of energy concentration: high transmittance, narrow spectral width, and small deviation from the target wavelength in the target region. In the proposed method, the spectral width of the spectrum is compared with that of a reference spectrum before its deviation from the target wavelength is examined. After extracting the maximum transmittance, a performance index of the spectrum is obtained in a percentile value. The effectiveness of the proposed method was analytically proven by surface plasmon resonance-generated spectra with five design features and five variations in each feature. The results indicated that the proposed method not only substantially reflected the predictions made by intuitive visual inspections, but also avoided misleading and ambiguous results evaluated by existing full-width-at-half-maximum (FWHM) method, figure-of-merit (FOM) method, and coordinates on the chromaticity diagram. In addition to the numerical analysis, the experimentally obtained spectra of phosphors in white light emitting diodes were also evaluated. The results proved that the proposed method can successfully highlight the scaled performance difference among the spectra, which is not supported by existing FWHM and FOM methods by simultaneously considering the aforementioned three characteristics of a spectrum.     

Environmentally friendly CsPbBr3 QDs multicomponent glass with super-stability for optoelectronic devices and up-converted lasing

Ultra-stable CsPbBr₃ perovskite quantum dots (QDs) multicomponent glass with high transmittance was prepared by melt-quenching heat treatment. The average diameter of the CsPbBr₃ QDs was ∼1.96 nm. The resulting glass displayed a high exciton binding energy of 362 ± 18 meV. Notably, these glass-encapsulated materials exhibited excellent resistance to heat, light, and water, superior to that of previously reported perovskite-based materials, and underwent an extremely low rate of Pb leaching during water immersion. Based on the glass, a high-performance white light-emitting diode (WLED) device was fabricated with Commission Internationale de L’Eclairage (CIE) coordinates of (0.3156, 0.3326) and color gamut of ∼113 % National Television Standards Committee (NTSC). The CsPbBr₃ QDs glass without rare earth elements further acted as an optical gain medium, realizing up-conversion lasing with 980-nm laser excitation for the first time. The reversible linear fluorescence response indicates that the glass could be a potential candidate for temperature sensors.     

瞬态二极管损坏后短路而引起的设备损坏问题探讨

通过在信号防雷器的瞬态二极管前加装一种快速熔断型保险管的方法，使得当瞬态二极管因各种原因损坏至短路后，当短路电流增大至一定程度后，快速熔断型保险管断开从而使瞬态二极管从电路中脱离，保证信号防雷器不会因瞬态二极管短路而引发短路电流，保证后级设备的使用安全。并就瞬态二极管在应用中出现短路损坏时短接电流引起的设备损坏问题提出一种解决方案进行探讨。     

Using d-limonene as the non-aromatic and non-chlorinated solvent for the fabrications of high performance polymer light-emitting diodes and field-effect transistors

Aiming to environment protection, green solvents are crucial for commercialization of solution-processed optoelectronic devices. In this work, d-limonene, a natural product, was introduced as the non-aromatic and non-chlorinated solvent for processing of polymer light-emitting diodes (PLEDs) and organic field effect transistors (OFETs). It was found that d-limonene could be a good solvent for a blue-emitting polyfluorene-based random copolymer for PLEDs and an alternating copolymer FBT-Th₄(1,4) with high hole mobility (μ_h) for OFETs. In comparisons to routine solvent-casted films of the two conjugated polymers, the resulting d-limonene-deposited films could show comparable film qualities, based on UV–vis absorption spectra and observations by atomic force microscopy (AFM). With d-limonene as the processing solvent, efficient blue PLEDs with CIE coordinates of (0.16, 0.16), maximum external quantum efficiency of 3.57%, and luminous efficiency of 3.66 cd/A, and OFETs with outstanding μ_h of 1.06 cm² (V s)⁻¹ were demonstrated. Our results suggest that d-limonene would be a promising non-aromatic and non-chlorinated solvent for solution processing of conjugated polymers and molecules for optoelectronic device applications.     

Intense-pulsed-light irradiation of Ag nanowire-based transparent electrodes for use in flexible organic light emitting diodes

Silver nanowire (AgNW) based transparent electrodes are inherently coarse and therefore typically are only ever weakly bonded to a substrate. A remarkable improvement in the characteristics of a AgNW network film has, however, been achieved through a simple and short process of irradiating it with intense pulsed light (IPL). This not only avoids any severe deterioration in the optical characteristics of the AgNW film, but also significantly improves its electrical conductivity, adhesion to a polymeric substrate, and ability to endure bending stress. Most important of all, however, is the finding that the surface roughness of AgNW networks can also be improved by radiation. In a series of measurements made of organic light emitting diodes fabricated using these treated electrodes, it was revealed that the leakage current can be notably reduced by IPL treatment.     

半导体激光器辐照损伤效应实验研究进展

半导体激光器(LD)工作在空间辐射或核辐射环境中时,会受到辐照损伤的影响而导致器件性能退化。文章回顾了不同时期研制的LD(从早期的GaAs LD到量子阱LD和量子点LD)在辐照效应实验方面的研究进展,梳理了国际上开展不同辐射粒子或射线(质子、中子、电子、伽马射线)诱发LD辐射敏感参数退化的实验规律,分析总结了当前LD辐照效应实验方法研究中亟待解决的关键技术问题,为今后深入开展LD的辐照效应实验方法、退化规律、损伤机理及抗辐射加固技术研究提供理论指导和实验技术支持。     

Electroactive polymers containing 3-arylcarbazolyl units as hole transporting materials for OLEDs

Monomers and their polymers containing 3-arylcarbazolyl electrophores have been synthesized by the multi-step synthetic route. The materials were characterized by thermo-gravimetric analysis, differential scanning calorimetry and electron photoemission technique. The polymers represent materials of high thermal stability having initial thermal degradation temperatures in the range of 331–411 °C. The glass transition temperatures of the amorphous polymeric materials were in the rage of 148–175 °C. The electron photoemission spectra of thin layers of monomers showed ionization potentials in the range of 5.6–5.65 eV. Hole-transporting properties of the polymers were tested in the structures of organic light emitting diodes with Alq₃ as the green emitter. The device containing hole-transporting layers of polyether with 3-naphthylcarbazolyl groups exhibited the best overall performance with a maximum current efficiency of 3.3 cd/A and maximum brightness of about 1000 cd/m².     

Synthesis and characterization of poly (linoleic acid)-g-poly(methyl methacrylate) graft copolymer with applying in Au/PLiMMA/n-Si diode

Poly (linoleic acid)-g-poly(methyl methacrylate) (PLiMMA) graft copolymer was synthesized and characterized. PLiMMA graft copolymer was synthesized from polymeric linoleic acid peroxide (PLina) possessing peroxide groups in the main chain by free radical polymerization of methyl methacrylate. Later, PLiMMA was characterized by proton nuclear magnetic resonance (¹H NMR), gel permeation chromatography (GPC), thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Furthermore, Au/PLiMMA/n-Si diode was fabricated for the purpose of investigating PLiMMA׳s conformity in diodes. The main electrical characteristics of this diode were investigated using experimental current–voltage (I–V) measurements in dark and at room temperature. Obtained results, such as sufficiently high rectifying ratio of 4.5×10⁴, indicate that PLiMMA is a promising organic material for electronic device applications.