Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

电感耦合等离子体质谱法测定铅锌矿中镓铟锗铊

稀散元素是铅锌矿石中重要的伴生元素,为了综合利用铅锌矿资源,在地质、选矿上经常要考查稀散元素镓、锗、铟、铊的含量。研究了利用电感耦合等离子体质谱法测定铅锌矿中镓、铟、锗、铊4种稀散元素,选取了最佳仪器分析条件,通过在线加入内标校正基体效应和接口效应,检出限分别为0.02μg·g-1、0.01μg·g-1、0.03μg·g-1和0.05μg·g-1,相对标准偏差(RSD)为0.85%~2.84%,回收率在93.3%~102.3%之间,明显优于其他分析方法。该方法样品前处理简便、快捷,测定结果准确,令人满意。     

改进的“三图法”在煤矿顶板水害评价中的应用——以东胜煤田台格庙勘查区为例

通过建立台格庙勘查区首采煤层冒裂安全性分区图和煤层顶板含水层富水性分区图,来对煤层顶板的含水层涌(突)水条件进行评价。针对勘查区煤层厚度变化大、顶板无稳定隔水层,顶板含水层富水性较弱的特点,在传统的“三图法”基础上,充分考虑了含水层的富水性和导水裂缝带发育高度这两个因素,选用导水裂缝带高度与含水层厚度的百分比来表示导水裂缝带发育高度对含水层涌(突)水的影响,在此基础上对首采煤层顶板含水层涌(突)水条件进行综合分区评价。四井田中部及二井田北部地区涌(突)水危险性为较危险区,三井田北部、五井田南部及勘查区南部局部地区涌(突)水危险性为过渡区,其他地段为安全区、较安全区。针对顶板充水含水层涌(突)水条件综合分区,提出了疏放水、注浆、监测等防治水措施建议。     

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.     

退火温度对CuGa_(0.8)Ge_(0.2)Se_2薄膜结构及光学特性的影响

采用脉冲激光沉积法在SiO2衬底上制备了CuGa0.8Ge0.2Se2薄膜。采用X射线衍射和X射线能谱仪研究了退火温度对薄膜晶体结构和成分的影响,利用扫描电子显微镜表征了薄膜的表面形貌,采用紫外—可见分光光度计分析了薄膜的光学特性。结果表明,在CuGaSe2中掺杂Ⅳ族元素Ge,光子吸收能量分别为0.65和0.92 e V,禁带宽度为1.57 e V,能够形成中间带。并随着退火温度的升高,CuGa0.8Ge0.2Se2薄膜的光学带隙逐渐减小。     

电子辐照GaInP/GaAs/Ge三结太阳电池少子寿命的变化

为研究电子辐照空间太阳电池的损伤机制，对电子辐照GaInP/GaAs/Ge三结太阳电池进行了光致发光谱测量，分析了GaInP顶电池及GaAs中间电池发光强度随电子注量的变化规律。利用辐射效率关系对归一化发光强度随电子辐照注量的变化进行了拟合，分别得到了GaInP顶电池及GaAs中间电池在不同辐照条件下的少子非辐射复合寿命τ_nr，通过对比辐照前后少子非辐射复合寿命的衰降变化，发现GaInP顶电池的抗辐照性能优于GaAs中间电池。     

Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

In this work we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates using Ar and H₂ gas mixture. The absolute value of atomic content of the H was determined by Elastic Recoil Detection Analysis (ERDA) with 1.6 MeV 4He⁺ beam. The dynamics of the out diffusion was investigated by annealing in high purity (99.999%) argon atmosphere at 350 °C for several hours. It was clearly shown that hydrogen can diffuse out faster from Ge film than from the Si one during annealing of the samples.     

Measurements of Photon Mass Attenuation Coefficients for Ge and BGO Crystals at 10 Me V

The photon mass attenuation coefficients of the important materials for γ-ray detection, Ge and BGO (Bi₄Ge₃O₁₂) crystals, have been measured for 10.0 MeV γ-rays. The measurement system using the laser-Compton backscattering γ-rays and the high-resolution high-energy photon spectrometer has been developed and utilized. The effectiveness of the system achieving the total systematic uncertainties of 0.5% for the measurements of the photon mass attenuation coefficients was demonstrated. It was shown that the measured photon mass attenuation coefficients, 318.1 ± 1.7 [cm²/g] for the Ge crystal and 425.2 ± 2.4 [cm²/g] for the BGO crystal, agree within the achieved experimental uncertainties with the evaluated values including atomic and nuclear processes at 10.0 MeV.     

Fast,Scalable Synthesis of Micronized Ge3N4@C with a High Tap Density for Excellent Lithium Storage

Nanostructuring has significantly contributed to alleviating the huge volume expansion problem of the Ge anodes. However, the practical use of nanostructured Ge anodes has been hindered due to several problems including a low tap density, poor scalability, and severe side reactions. Therefore, micrometer-sized Ge is desirable for practical use of Ge-based anode materials. Here, micronized Ge₃N₄ with a high tap density of 1.1 mg cm⁻² has been successfully developed via a scalable wet oxidation and a subsequent nitridation process of commercially available micrometer-sized Ge as the starting material. The micronized Ge₃N₄ shows much-suppressed volume expansion compared to micrometer-sized Ge. After the carbon coating process, a thin carbon layer (≈3 nm) is uniformly coated on the micronized Ge₃N₄, which significantly improves electrical conductivity. As a result, micronized Ge₃N₄@C shows high reversible capacity of 924 mAh g⁻¹ (2.1 mAh cm⁻²) with high mass loading of 3.5 mg cm⁻² and retains 91% of initial capacity after 300 cycles at a rate of 0.5 C. Additionally, the effectiveness of Ge₃N₄@C as practical anodes is comprehensively demonstrated for the full cell, showing stable cycle retention and especially excellent rate capability, retaining 47% of its initial capacity at 0.2 C for 12 min discharge/charge condition.