Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells

Numerical simulations are conducted to study the current-matching effect and operation mechanisms in and to design the optimized device structure of InGaN/Si tandem cells. The characteristics of short circuit current density (J_sc), open circuit voltage (V_oc), fill factor (FF), and conversion efficiency (η) of InGaN/Si tandem cells are determined by the current-matching effect. The similar trend of η to that of J_sc shows that J_sc is a dominant factor in determining the performance of InGaN/Si tandem cells. In addition, the combined effects of the J_sc, V_oc, and FF lead to an optimized η in the medium-indium, xpn-InGaNInGaN‒to‒Si, InGaN/Si tandem cell. At xpn-InGaNInGaN‒to‒Si, the J_sc of the InGaN subcell is equal to that of the Si subcell such that an InGaN/Si tandem cell reaches the current matching condition to operate at the maximum power point. Similar to the J_sc and FF, the η for low- xpn-InGaN<xpn‒InGaNInGaN‒to‒Si and high-In xpn-InGaN>xpn-InGaNInGaN‒to‒Si InGaN/Si tandem cells are InGaN- and Si subcell-limited, respectively. Furthermore, the p- and n-layer thicknesses, indium content, and position of depletion region of InGaN subcell should be adjusted to reapportion the light between the two subcells and to achieve the maximum conversion efficiency. With appropriate thicknesses of p- and n-InGaN, In_0.5–0.6Ga_0.5–0.4 N/Si tandem cells can exhibit as high as approximately 34% to 36.5% conversion efficiency, demonstrating that a medium-indium InGaN/Si tandem cell results in a high-efficiency solar cell. Simulation results determine that the current-matching effect and operation mechanisms of InGaN/Si tandem cells can be utilized for efficiency enhancement through the optimized device structures.     

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.     

Effects of VLS and VS mechanisms during shell growth in GaAs-AlGaAs core-shell nanowires investigated by transmission electron microscopy

We investigated by means of transmission electron microscopy (TEM) the final growth stage of GaAs/AlGaAs core-shell nanowires (NWs) self-assembled by Au-catalyst assisted metalorganic vapor phase epitaxy (MOVPE). TEM observations and energy dispersive x-ray spectroscopy revealed the presence of an AlGaAs tapered region of varying chemical composition nearby the NW extreme end (i.e. between the core-shell NW trunk and the Au nanoparticle catalyst). Our findings evidence that this region exhibits an unintentional Al_yGa_1−yAs/Al_xGa_1−xAs core-shell structure, a result of the combined axial (vapor-liquid-solid, VLS) self-assembly and conventional (vapor-solid, VS) overgrowth of the material. While the VS-grown Al_xGa_1−xAs alloy retains the Al composition (x=0.3) of the AlGaAs shell along the NW trunk, the central Al_yGa_1−yAs section is made of an Al-rich (y≈0.8–0.9) alloy segment formed during AlGaAs shell overgrowth, followed by a graded-alloy segment formed upon deposition of the terminating GaAs cap layer, the latter segment due to the effect of the Al reservoir left in the Au catalyst nanoparticle (NP).     

Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1−XSb quantum wells

In_XGa_1−XSb has the highest hole mobility amongst all III-V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in In_XGa_1−XSb quantum wells lifts the degeneracy between the light and heavy hole bands which leads to reduction in the hole effective mass in the lowest occupied band and an increase in the mobility. We present magnetotransport measurements on compressively strained In_XGa_1−XSb and GaSb quantum wells. Hall-bar and Van de Pauw structures were fabricated and Shubnikov-de Haas oscillations in the temperature range of T = 2-10 K for magnetic fields of B = 0-9 T were measured. The reduction of effective hole mass with strain was quantified. These results are in excellent agreement with modeling results from band structure calculations of the effective hole mass in the presence of strain and confinement.     

InGaAs and Ge MOSFETs with high κ dielectrics

InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al₂O₃/Ga₂O₃(Gd₂O₃) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (D_it’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage V_th with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm²/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al₂O₃/GGO gate dielectrics and ALD-Al₂O₃. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length.     

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Electrical and physical characteristics of the Al₂O₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.     

Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric

This paper reports on an investigation of interface state densities, low frequency noise and electron mobility in surface channel In_0.53Ga_0.47As n-MOSFETs with a ZrO₂ gate dielectric. Interface state density values of D_it ∼ 5 × 10¹² cm⁻² eV⁻¹ were extracted using sub-threshold slope analysis and charge pumping technique. The same order of magnitude of trap density was found from low frequency noise measurements. A peak effective electron mobility of 1200 cm²/Vs has been achieved. For these surface channel In_0.53Ga_0.47As n-MOSFETs, it was found that η parameter, an empirical parameter used to calculate the effective electric field, was ∼0.55, and is to be comparable to the standard value found in Si device.     

Characteristics of GdGaO grown by MBE

Ga₂O₃/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga₂O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS).     

Synthesis of InSb nanocrystals in an air atmosphere and their photocatalytic activity from near-infrared to ultra-violet

We report a new facile route to prepare indium antimonide (InSb) nanocrystals (NCs) in air and at ambient pressure. Spherical cubic zinc blende InSb NCs with an average size of 5 nm were synthesized and spontaneously separated through a rapid microwave-assisted one-pot reaction. The photocatalytic activity of obtained product was investigated by the decolorization of methyl orange dye under near-IR, visible light, and UV irradiation. This novel synthetic pathway may improve existing applications and suggest new opportunities for studying III-V semiconductor nanomaterials.     

Innovative advances in LED technology

An overview of the rapid progress in the developments of the inorganic light emitting diode (LED) technology is presented. Innovative structures and designs of the device have led to dramatic improvements of the performance in LED technology, groundbreaking performance records are being reported constantly. This article summaries the recent progress of the high brightness LEDs, and describes the LED structures from the basic pn homojunction, to heterojunction, and eventually the use of nano-scale low-dimensional structures in the device fabrication. Some of the novel structures and designs of the most recent developed high brightness LEDs, as well as the conventional and innovative ways of producing white LEDs are briefly discussed.