Review of pulsed thermal NDT: Physical principles,theory and data processing

This paper summarizes the basics of pulsed thermal nondestructive testing (TNDT) including theoretical solutions, data processing algorithms and practical implementation. Typical defects are discussed along with 1D analytical and multi-dimensional numerical solutions. Special emphasis is focused on defect characterization by the use of inverse solutions. A list of TNDT terms is provided. Applications of active TNDT, mainly in the aerospace industry, are discussed briefly, and some trends in the further development of this technique are described.     

小波变换在光谱特征提取方面的应用

人们在处理高光谱图像时一般要对一些典型地物进行光谱分析、特征波段的提取,以便提取出最大量的有效信息,剔除无用或冗余的信息,然后再进行分类识别.采用小波变换的分析方法,选用合适的小波进行分解,根据分解后的高频分量中包含的重要信息,利用局部相邻的正负极值点找出对应于原始光谱曲线上每个吸收带的左右边界;利用局部过零点,即可比较精确的提取出各个吸收带的中心波长.该方法比传统的光谱特征提取方法更简洁、有效,实验证明为一种比较理想的光谱特征提取方法.     

Time-resolved spectroscopy of infrared active vibrations in 2,5-dioctyloxy poly(phenylene vinylene) films

We report on picosecond time resolved spectroscopy of photogenerated infrared active vibrations in thin films of 2,5-dioctyloxy poly(phenylene vinylene). We excited the films by ?4 ps long pulses of 565 nm laser light with 2×10¹³ photons/cm² per pulse and repetition rate of 76 MHz. We then followed the temporal evolution of the infrared active vibrational (IRAV) spectrum using a subsequent, variably delayed, weak tunable IR probe pulses of similar temporal duration. Under these conditions, we show clear spectroscopic evidence for photogenerated infrared active vibrations at times which are shorter than our temporal resolution (<4 ps). We suggest that the transient IRAV absorption is due to secondary polarons formation following exciton dissociation.     

几种新型的光电器件

描述用ＳＯＩ技术制造的光耦合ＭＯＳ继电器和多量子阱长波和红外探测器，以及集成异质结晶体管和激光二管于一体的高增益，高灵敏的光电子开关器件，文中着重介绍这些器件的结构，制造工和器件特性，并对其进行了讨论。     

无线局域网技术及应用

无线局域网技术是目前发展迅速的技术，相对于有线局域网有许多优点。随着无线网络产品性能的提高和价格的不断下降，无线局域网技术有着广泛的应用前景。据此对无线局域网的基本概念、特点及其技术作了简单的介绍，提出了无线局域网面向应用的几种解决方案，并对发展前景作了预测。     

新型涂料增稠剂的化学成分鉴定

本文用红外光谱法对一种新型涂料增稠剂进行了化学成分鉴定,其主要成分为羟丙基甲基纤维素与蒙脱土。     

THE USE OF TRANSMISSION AND TRANSFLECTANCE NEAR INFRARED SPECTROSCOPY FOR THE ANALYSIS OF BEER

Both transmission and transflectance near infrared spectroscopy have been evaluated for the rapid analysis of beer components. Results of sufficient accuracy have been obtained for ethanol content and Original Gravity. Application of a first derivative mathematical treatment on the spectral data improved calibration equations. Better accuracy was achieved using the transmission mode compared to that using the transflectance mode.     

Drying of Uncoated Paper with Gas-Fired Infrared Emitters—Optimum Emitters' Location Within a Paper Machine Drying Section

This article theoretically investigates the drying of uncoated paper with gas-fired infrared (IR) emitters installed within the drying section of a given commercial paper machine. Specifically, it presents the ideal location of two opposing IR emitters within the drying section. The ideal location of the two opposing IR emitters corresponds to the highest machine speed with specified average moisture content of paper sheet at the end of the drying section. This article also presents the average evaporation rate, temperature, and moisture content of the paper sheet as it travels through the drying section with the two opposing IR emitters operating at the optimum location. In addition, the temperature and moisture profiles in the sheet thickness direction, before and after the IR emitters, are provided. This article is not concerned with the potential effects of drying with IR emitters on paper sheet properties and machine runnability issues.     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.