As,Sb,Sn对30CrMnSiA钢力学性能的影响

在３０ＣｒＭｎＳｉＡ钢中加入不同量的Ａｓ，Ｓｂ，Ｓｎ元素，研究了这些元素单独存在及复合存在时对钢的强度，塑性，冲击韧度及韧脆转变温度的影响规律，并用扫描电镜及俄歇能谱分析了Ａｓ，Ｓｂ，Ｓｎ导致晶界脆化的机理。     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

Intermetallic phase formation in directionally solidified Al−Si−Fe alloy

The present study has been undertaken to better understand the solidification behavior of Al−Si−Fe alloys containing 7wt.% Si and 0.9wt.% Fe, with particular regard to the formation of phase during controlled solidification and influence of growth rates on intermetallic phase selection. The alloys studied were Al-7Si-0.9Fe alloys, which were produced by a modified Bridgman solidification arrangement. These alloys were solidified unidirectionally with different growth rates (1–30mm/min). The solidified microstructure of these alloys consists of the growth of primary aluminum and multiple second phase reactions.     

Effects of Solid-State Reaction Synthesis Processing Parameters on Thermoelectric Properties of MgaSi

The Mg2 Si-matrix thermoelectric material was stnthesized by low temperature solid-state renc-tion.This paper studies the effects of holding time and reaction temperatare on the particle size and the properties of the material, and also studies effects of doping elemental Sb, Te and their doping seqence on the properties of the materiol. The result shows that excessirely high temperature and elongated holding time of solid-state reaction are harmful, there is a range of partiele size to ensure optimum properties and the doping sequence of Sb or Te without influencing the properties.     

Annealing process of fine grained co-stabilised (Y,Mg)-PSZ/MgAl2O4 ceramics

Abstract

Co-stabilised (Y,Mg) partially stabilised zirconia (PSZ) ceramics with MgAl₂O₄ spinel additions were produced, with industrial zirconia as the main starting material. Powders were prepared using a mechanical milling–mixing process. The effect of the annealing process on the mechanical properties, phase compositions, and microstructure of fine grained PSZ ceramics was investigated.     

Quantitative measurement of oxygen content in Si targets

Enriched self-supporting targets of ^28,29,30Si are often used in the field of high resolution nuclear physics experiments. The Si targets were prepared by the thermal evaporation deposition or reduction-deposition methods. The targets, however, are always contaminated by oxygen as Si-material is easily oxidised. These contaminated targets lead to poor data with low S/N ratio. Thus it is very useful if one can estimate the amount of oxygen in the target quantitatively before experiments.In this work we have developed a method to estimate the amount of oxygen in the Si target. We used α-ray and β-ray thickness gauges, which have different sensitivity to oxygen atoms. Namely, the α-ray gauge is more sensitive to light elements such as oxygen compared to the β-ray gauge. Thus one can deduce the amount of oxygen by comparing the oxygen thickness measured by α-ray gauge with that of the β-ray gauge.Accuracy of a few percents can be obtained for the oxygen content in Si targets with a thickness of 1 mg/cm². The present method can also be applied to heavy elements such as Ta₂O₅.     

Luminescence hydrogenated nanoamorphous Si films fabricated by reactive pulsed laser ablation

Hydrogenated nanoamorphous Si (na-Si:H) films have been fabricated by reactive pulsed laser ablation technique with hydrogen as reactive gas. It is found that the hydrogen pressure has a great effect on both the structure and photoluminescence (PL) properties of the films. Increasing the hydrogen pressure leads to a structural transition of the films from amphorous Si to na-Si:H, and the PL center wavelength of the na-Si:H films is varied with the hydrogen pressure. The PL decay times of the na-Si:H films are in the nanosecond scale and are shorter on the high energy side of their PL spectrum. The results demonstrate that the na-Si:H films are promising candidates for visible, tunable and high-performance light-emitting devices.     

Effect of Film Thickness on Properties of a—Si：H Films

The a -Si:H film with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition contitions.The effect of diferent thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity ,photoconductivity and threshold voltage increase,the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ration of on/off state first maximize and then reduce.     

纳米晶体管研究进展

纳米晶体管是尺寸小于100nm的晶体管。纳米晶体管大大提高了晶体管、集成电路、计算机以及其他电子器件的性能。Intel公司正在进行50nm以下Si晶体管的研制,他们研制的THzCMOS平面晶体管克服了小尺度给纳米晶体管制作所带来的诸如栅极漏电流、关闭状态下的漏电流、电阻增加以及开通电压升高等一系列困难。目前,Si纳米晶体管的小型化并没有停止的趋势,除此以外,碳纳米管晶体管、Mott转变纳米晶体管以及有机纳米晶体管都在受到大力关注和正在研制之中。