Domain reversal and current transport property in BiFeO3 films

The electrical properties and domain reversal in BiFeO₃ ferroelectric films were studied using sandwiched heterostructures and piezoresponse force microscopy. A robust polarization state was observed, combined with a switchable domain pattern and a remanent polarization of approximately 100 μC cm^?2. In addition, domain reversal was explored using scanning probe microscopy. The results show that dipoles could be reversed along the direction of the electric field under a negative tip bias, leading to carrier gathering near the domain walls. The enhanced conductivity near the domain walls was owing to the discontinuous polarization boundary conditions. In addition, typical diode-like current transport properties are sensitive to various temperature conditions, which is attributed to the Schottky barriers at the contact interface. These findings extend the current understanding of domain texture reversal in ferroelectric films and shed light on their potential applications for future ferroelectric random-access memory operations over a wide temperature range.     

Data erasure in Fabry–Perot Diode Lasers: effects of facet reflectivity

ABSTRACT

In this study, the effects of facet reflectivity on the data erasure ability of injection-locked Fabry Perot Laser Diode (FPLD), based on a remodulation method in wavelength division multiplexed passive optical network (WDM PON), were investigated. For this purpose, the feasible front facet reflectivity of FPLD was determined as between 0.2% and 7%, depending on the specified injected power interval. Firstly, the system carried out analysis without applying data at the user end to comprehensively demonstrate how much downstream data was completely erased in FPLD. Then, 2.5 Gb/s of non-return-to-zero (NRZ) data was applied and the results compared with the erased downstream signal without data. The results show that upstream transmission improved with an increase in facet reflectivity between 0.2% and 7%.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

OLED微显示器的原子扫描策略

为了实现2K及以上超高清微型显示器的高效率高性能扫描,建立了微型显示器的原子扫描模型。对该模型采用的数学矩阵、基于分形延伸的植入运算进行研究,提出了原子扫描策略并推导了原子扫描序列。首先,对现有的PWM(脉冲宽度调制)扫描策略进行扫描性能分析。然后,在分析比较几种扫描策略性能的基础上,说明原子扫描是实现较优性能的最佳选择。实验结果表明:对于256级灰度,采用32位子空间,8位权值比为128∶64∶32∶16∶9∶4∶2∶1的原子扫描策略具有较好的线性度和较高的传输效率。在分辨率为1 600×1 600的原子扫描方案中,时钟频率为50MHz,帧频可达90Hz,线性度接近99.8%,传输效率高达100%,基本满足超高分辨率扫描系统中高帧频、较低时钟、高线性度的要求。     

Electrospun composite poly(lactic acid)/polyaniline nanofibers from low concentrations in CHCl3: Making a biocompatible polyester electro-active

Nanofibers of poly(lactic acid) (PLA) blended with polyaniline (PANi) were fabricated via electrospinning at much lower PLA concentrations (∼1wt%) in CHCl₃ than reported before using a more efficient technique of preparing the solutions. The polymer nanofibers had diameters in the range 10 nm–300 nm. Nanofibers prepared with a 3 wt% PLA/PANi solution were conducting and were used to fabricate a diode which was electrically characterized and exhibited a low turn-on voltage and a rectification ratio of 500. The device characteristics were analyzed using the standard thermionic emission model of a Schottky junction and yielded an ideality factor of 1.6 and a barrier height of 0.49 eV. Using a simple circuit, the diode was able to rectify a low frequency alternating current signal with an efficiency of 10%. The ability to engineer insulating PLA into nanofibers that are electro-active extends the range of applications of this biocompatible and biodegradable polyester to include electronic devices that have reduced toxicity.     

A review of digital twin in product design and development

In the era of digitalization, there are many emerging technologies, such as the Internet of Things (IoT), Digital Twin (DT), Cloud Computing and Artificial Intelligence (AI), which are quickly developped and used in product design and development. Among those technologies, DT is one promising technology which has been widely used in different industries, especially manufacturing, to monitor the performance, optimize the progresses, simulate the results and predict the potential errors. DT also plays various roles within the whole product lifecycle from design, manufacturing, delivery, use and end-of-life. With the growing demands of individualized products and implementation of Industry 4.0, DT can provide an effective solution for future product design, development and innovation. This paper aims to figure out the current states of DT research focusing on product design and development through summarizing typical industrial cases. Challenges and potential applications of DT in product design and development are also discussed to inspire future studies.     

Investigation of geometry dependence on MOSFET linearity in the impact ionization region using Volterra series

In this paper, investigation of device geometry on intermodulation distortion (IMD) of metal–oxide–semiconductor field-effect transistors (MOSFETs) is presented in the impact ionization region based on the Volterra analysis. As the gate length or gate width decreases, observed linearity improvement of the MOSFET in the breakdown regime is attributed to the more obvious breakdown inductance nonlinearity which cancels the transconductance nonlinearity. Linearity of the MOSFETs can be improved by choosing suitable device geometry in the breakdown region. It is believed the presented analysis results can benefit the reliability investigation for MOSFET linearity in the breakdown region.     

An efficient and secure cipher scheme for images confidentiality preservation

In this paper, a novel image encryption scheme based on two rounds of substitution–diffusion is proposed. Two main objectives have guided the design of this scheme: (a) robustness against the most known type of attacks (statistical, chosen/known plaintext, ciphertext-only and brute force attacks) and (b) efficiency in terms of computational complexity (i.e., execution time reduction) in order to meet recent mobiles’ applications’ requirements. First, a dynamic key, changed for every input image is generated and used as the basis to construct the substitution and diffusion processes. Then, the encryption process is performed by the transmitter based on a non-linear S-box (substitution) and a matrix multiplication (diffusion), applied on each sub-matrix of the image. At the destination side, decryption is applied in the reverse order. We have conducted several series of experiments to evaluate the effectiveness of the proposed scheme. The obtained results validated the robustness of our scheme against all considered types of attacks and showed an improvement in terms of execution time reduction compared to the recent existed image-encryption schemes.     

Mathematical model of five-level ac/dc converter in abc reference frame

This paper proposes a mathematical model for three-phase multilevel diode clamped ac/dc converter (DCC) in abc-reference frame, in order to study dynamic responses and stability of the system, where multilevel converters are employed. An attempt is made to model the converter adopting 5-level DCC and can be easily extended to DCC with any number of levels. The converter output and dc capacitor voltages are expressed in terms of input source currents and switching functions; which are basic inputs provided to a converter. Connection and capacitor currents of the converter have been analyzed. The effectiveness of the proposed mathematical model is verified by the computer simulations and experimental results. The obtained mathematical model has been validated with the physical converter model in MATLAB/Simulink environment and the prototype model using dSPACE DS under closed loop control system. The developed mathematical model equations are able to represent the physical converter with similar characteristics.     

Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode

Au/3C-SiC/p-Si/Al Schottky barrier diode was prepared using atmospheric pressure chemical vapor deposition technique. The device parameters such as barrier height, ideality factor, and series resistance were calculated using current-voltage characteristics, and were found to be 0.44 eV, 1.55, and 1.02 × 10⁴ Ω, respectively. The photocapacitive properties of the diode were studied under various illumination intensities. The transient photocapacitance measurements indicate that the capacitance of the Au/3C-SiC/p-Si/Al Schottky diode is very sensitive to illumination. The photocapacitance of the diode increases with increase in illumination intensity. The increase in photocapacitance with increase in illumination intensity suggests that these devices could be utilized as a photocapacitive sensor for optical sensors.