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1.
巨型滑坡全球不常见,但是破坏性极强,其识别对于加深区域构造背景的认识,防灾减灾和工程建设均有指导意义。基于遥感解译、无人机地形测绘和现场调查,报道了新发现的八宿巨型滑坡及其残留堆积体特征,初步分析了成因机制与演变过程,估算了滑坡方量。主要结论如下:(1)八宿滑坡发育于怒江缝合带的夏里-八宿裂谷带内,岩性以古生界加玉桥岩群大理岩组和侏罗系马里组变质砂泥岩为主,上部岩层产状为陡倾顺坡向,下部岩层产状为陡倾逆坡向,岸坡结构总体上为上硬下软;(2)滑坡区横跨冷曲的左右两岸,长约7200m,宽约4800m,面积约22.5km2,估算方量约35×108m3,目前残余方量约14×108m3,是国内已经确认的方量最大的滑坡;(3)滑坡极可能属于历史地震诱发的高速堵江滑坡,堰塞坝高度约185m,堆积体碎裂化严重,且在冷曲右岸爬升超过600m。滑坡形成后,堆积区历经了堰塞坝溃决、多拉寺次级滑坡、泥石流堆积与冲刷、表面流水冲刷等改造过程,但是滑坡地貌特征整体保存良好。由于滑坡和泥石流堵江,冷曲在滑坡区先后两次改道;(4)从滑坡与冷曲的演变过程来看,推测滑坡的发生时间应在晚更新世。即八宿滑坡为古滑坡;(5)八宿巨型滑坡的发现说明迄今为止我们对青藏高原地质环境的认知仍然十分有限。川藏铁路等工程建设应加强基础地质与工程地质研究,以及地质灾害风险论证,确保施工与运行期安全。  相似文献   
2.
高速滑坡–碎屑流颗粒反序试验及其成因机制探讨   总被引:2,自引:0,他引:2  
采用室内物理模型试验对滑坡碎屑流在运动过程的颗粒分离问题进行研究,主要考虑小颗粒含量、粒径差以及滑床糙率等因素的影响。试验结果表明:碎屑物质在运动中的分离程度受粒径差影响较大、受小颗粒含量的影响较小,增加滑床糙率可以使得颗粒分离现象更加明显。结合现场调研、物理模型试验及已有研究成果对高速滑坡–碎屑流运动过程中颗粒反序的成因机制进行探讨:碎屑物质在高速运动过程中,由于小颗粒等效摩擦系数较大,碎屑物质在运动方向上出现大颗粒在前小颗粒在后的分离现象;进入减速堆积阶段,小颗粒先停积,后续大颗粒可越过小颗粒堆积物继续向前运动,而小颗粒则多被阻挡在堆积物末端,最终堆积物形成前端以大颗粒为主、末端以小颗粒为主,中部大颗粒在上小颗粒在下的堆积物结构。  相似文献   
3.
The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.  相似文献   
4.
针对行波探测器阵列(TWDA)仅提高了光电探测器 的输出功率而输出带宽未得到改善的问题,本文提出了一种区别 于TWDA的基于桥接T型光电探测器阵列新结构。本设计采用基于constant-R结构的桥接T型 结构代替TWDA中的传统 constant-K结构的方法,从而形成人工传输线结构。即耦合微带线提供串连电感和所需要 的互感 ,电容并联于其中一条微带 线上,再将单个光电二极管嵌入到此人工传输线上,构成单个阵列单元,再按照阵列式结构 将这些阵列单元有效级联起来构 成桥接T型光电探测器阵列。仿真结果表明,所提出的桥接T型光电探测器阵列能够使多个光 电探测器功率合成的同时提高 工作带宽,虽然桥接T型光电探测器阵列合成功率相比于传统TWDA合成功率有稍许减少,但 在工作带宽上却提高了2倍, 减少的稍许合成功率可以通过增加级联数目加以补偿。  相似文献   
5.
ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n+-n-p-p+) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 1010 Wm?2 and the Si-based counterpart has lowest power density of order 106 Wm?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.  相似文献   
6.
We propose an evolutionary computation approach to design a fast and secure block cipher using non-uniform second-order cellular automata. We build a flexible block ciphering model that permit the construction of a huge space of possible instances defined each one by a finite set of elementary transition rules. The constructed space is explored using a genetic algorithms strategy in order to find an optimal solution with respect to the strict avalanche criterion used as fitness measurements. The genetically designed cipher is benchmarked experimentally using conventional statistical tests, and shown to have very admissible characteristics leading to a very acceptable level of cryptographic security. Moreover, performances analysis shows that the designed cipher permit to achieve a high encryption/decryption speed, and compete many of the existing standardized ciphers.  相似文献   
7.
CMOS图像传感器钳位光敏二极管夹断电压模型研究   总被引:1,自引:1,他引:0  
曹琛  张冰  吴龙胜  李炘  王俊峰 《半导体学报》2014,35(7):074012-7
A novel analytical model of pinch-off voltage for CMOS image pixels with a pinned photodiode structure is proposed. The derived model takes account of the gradient doping distributions in the N buried layer due to the impurity compensation formed by manufacturing processes; the impurity distribution characteristics of two boundary PN junctions located in the region for particular spectrum response of a pinned photodiode are quantitative analyzed. By solving Poisson's equation in vertical barrier regions, the relationships between the pinch-off voltage and the corresponding process parameters such as peak doping concentration, N type width and doping concentration gradient of the N buried layer are established. Test results have shown that the derived model features the variations of the pinch-off voltage versus the process implant conditions more accurately than the traditional model. The research conclusions in this paper provide theoretical evidence for evaluating the pinch-off voltage design.  相似文献   
8.
Voltage pulses with fast rise time can be obtained from Marx circuits based on avalanche transistors. In this research, the ZETEX avalanche transistors are used as the switches in a Marx circuit to generate stable voltage pulses with double-exponential waveform and fast rise time. By using these transistors, the circuit is able to generate higher pulsed voltage with fewer stages. A three stages and a ten stages Marx circuit, as well as their triggering circuits, are designed. The two Marx circuits are also tested by simulations based on the Pspice code and by experiments, results of which are consistent with each other. With the ten stages Marx circuit, we obtain positive and negative pulses with the rise time of about 1.5 ns, the amplitude above 1 100 V, and the pulse width below 5 ns. It is proved that the proposed Marx circuit equipped with avalanche transistors could be an effective kind of solid-state pulse generator.  相似文献   
9.
InGaAs固体微光器件研究进展   总被引:2,自引:1,他引:1  
InGaAs器件具有光谱响应宽、量子效率高、响应速度快、数字化读出、高温工作、可靠性好以及寿命长等优点,符合新一代微光器件的发展需求,在国际上成为固体微光器件的一种新选择,获得了重要的发展和应用。文章就InGaAs固体微光器件材料属性、器件性能以及成像特点等几方面进行了详细分析,介绍了当前InGaAs器件的发展趋势,以及研制320×256 InGaAs阵列的最新进展。研究结果表明InGaAs材料生长及器件工艺具有较好的可控性和稳定性,为实现高性能、实用化的InGaAs固体微光器件提供了技术支撑。  相似文献   
10.
赵勇  徐超  江晓清  葛辉良 《半导体学报》2013,34(6):064009-4
The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.  相似文献   
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