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1.
《Ceramics International》2022,48(9):12118-12125
In this study, (Cu1/3Nb2/3)4+ complex cation and BaO–ZnO–B2O3 glass frit were adopted to solve the high sintering temperature and poor temperature stability of Ba3Nb4Ti4O21 ceramics. It is shown that pure Ba3Nb4Ti4O21 phase was formed when Ti site was partially replaced by (Cu1/3Nb2/3)4+ cation. The increasing number of dopants decreases the dielectric polarizability, correspondingly, the dielectric constant and temperature coefficient of the resonance frequency values are reduced consistently. The variation of the Q × f value is determined by internal ionic packing fraction and external sintering densification. The (Cu1/3Nb2/3)4+ cation effectively decreases the suitable sintering temperature from 1200 to 1050 °C while greatly improving the temperature stability. BaO–ZnO–B2O3 glass was used to further improve the low-temperature sintering characteristics of Ba3Nb4Ti4O21 ceramics. It is proven that the addition of glass frits effectively decreases the temperature to 925 °C with combinational excellent microwave dielectric properties: εr ~55.6, Q × f ~5700 GHz, τf ~3 ppm/°C, making the Ba3Nb4Ti4O21 ceramics promising in the applications of low-temperature cofired ceramic technology. 相似文献
2.
《Journal of the European Ceramic Society》2022,42(13):5684-5690
In this work, Zn-Ni co-modified LiMg0.9Zn0.1-xNixPO4 (x = 0–0.1) microwave dielectric ceramics were fabricated using a solid state synthesis route. Rietveld refinement of the XRD data revealed that all ceramic samples have formed a single phase with olivine structure. SEM images showed that the samples have a dense microstructure, that agrees with the measured relative density of 97.73 %. Based on the complex chemical bond theory, Raman and infrared reflectance spectra, we postulate that εr is mainly affected by the ionic polarizability, lattice and bond energy, while P-O bond plays a decisive role in Q×f and τf value. Optimum properties of Q×f ~ 153,500 GHz, εr ~ 7.13 and τf ~ ?59 ppm/°C were achieved for the composition LiMg0.9Zn0.06Ni0.04PO4 sintered at 875 ℃ for 2 h. This set of properties makes these ceramics an excellent candidate for LTCC, wave-guide filters and antennas for 5 G/6 G communication applications. 相似文献
3.
4.
基于硅介质柱型光子晶体,采用时域有限差分方法(FDTD),探究高斯光束在光子晶体界面的逆古斯汉欣(GH)位移。通过在光子晶体下表面添加硅透镜,研究高斯光束的入射角度、硅透镜的曲率半径以及温度对光子晶体逆GH位移的影响。研究结果表明,发生最大逆GH位移的角度大于几何理想全反射角。添加焦点位于光子晶体表面中心的硅透镜可以使逆GH位移显著增强,且当硅透镜的曲率半径为170时,逆GH位移增大为不加透镜时的1.7倍。研究不同入射角度下温度对光子晶体的逆GH位移的影响发现,当高斯光束的入射角为26o时,逆GH位移随着温度的变化最大且线性度较好,便于温度监测。 相似文献
5.
《Journal of the European Ceramic Society》2022,42(12):4953-4961
Low-loss microwave dielectric ceramics are of great significance for fifth-generation telecommunication (5G) devices used for higher frequencies, while reducing the dielectric loss in the microwave band is still a technical challenge. Lattice dynamics and terahertz response are closely related to the polarization of dielectrics, and can be used as effective methods to explore the loss mechanism of microwave dielectrics. Here, Al3+ was doped into the conventional high-permittivity (εr) Ca1-xSm2x/3TiO3 (x = 0.4) ceramic system, enhancing the Q×f values significantly. Raman spectra, thermally stimulated depolarization currents (TSDC) and terahertz time-domain spectra (THz-TDS) together showed that the stiffness of cation vibration became stronger when z value was larger, indicating a smaller damping of the lattice vibration, and leading to lower extrinsic losses and higher Q×f values. The relationship between lattice dynamics, defect behavior and microwave dielectric loss will provide a significant reference for the development of low-loss microwave dielectric ceramics. 相似文献
6.
将掺杂了不同含量微米铜粉的聚氨酯(PU)涂料通过涂层工艺涂敷在棉织物上制成吸波涂层织物,并利用扫描电子显微镜、红外光谱和矢量网络分析仪等测试了不同铜粉含量聚氨酯涂层的介电常数、磁导率和电磁损耗等电磁性能,同时还探讨不同铜粉含量涂料对涂层织物电磁吸收性能的影响。结果表明,在 8~13 GHz 的频段范围内,随着涂层中铜粉含量增加,涂层介电常数实部与虚部均增大,铜粉具有良好的介电性能,在外加电场的作用下产生极化,对电磁波产生介电损耗;铜粉不属于磁损耗材料,对电磁波产生磁损耗较小;当铜粉的含量较低(3 %,质量分数,下同)时,涂层材料的吸波与电磁屏蔽性能较弱,当含量由5 %增加至11 %时,在9.0、10.5、12.8 GHz处反射损耗最低分别为-20.4、-28.3、-25.6 dB,有效吸收带宽分别为0.2、1.3、1.1 GHz,电磁屏蔽效能分别由12.24、16.59、21.1 dB增加至25.92 dB。 相似文献
7.
Xiao-Qiang Song Wen Lei Fei Wang Tao Chen Shi-Wo Ta Zhen-Xiao Fu Wen-Zhong Lu 《Journal of the American Ceramic Society》2021,104(4):1740-1749
A gillespite-structured MCuSi4O10 (M = Ba1-xSrx, Sr1-xCax) ceramics with tetrahedral structure (P4/ncc) were prepared by solid-state reaction method. X-ray diffraction and thermogravimetry with differential scanning calorimetry (TG-DSC) were employed to study the phase synthesis process of BaCuSi4O10. Pure BaCuSi4O10 phase was obtained at 1075°C and decomposed into BaSiO3, BaCuSi2O6, and SiO2 when calcined at 1200°C. The relationships between the crystal structure and microwave dielectric properties of MCuSi4O10 ceramics were revealed based on the Rietveld refinement and P-V-L complex chemical bond theory. The dielectric constant (εr) decreased linearly with decreasing total bond susceptibility and ionic polarizability. Quality factor (Q × f) was closely dependent on bond strength and lattice energy. The temperature coefficient of resonant frequency (τf) was controlled by the stability of [CuO4]6− plane in MCuSi4O10. Optimum microwave dielectric properties were obtained for SrCuSi4O10 when sintered at 1100°C for 3 hours with a εr of 5.59, a Q × f value of 82 252 GHz, and a τf of −41.34 ppm/°C. Thus, SrCuSi4O10 is a good candidate for millimeter-wave devices. 相似文献
8.
Yuping Ji Kaixin Song Shiyu Zhang Zhilun Lu Ge Wang Linhao Li Di Zhou Dawei Wang Ian M. Reaney 《Journal of the European Ceramic Society》2021,41(1):424-429
Dense (1-x)wt%CaSnSiO5-xwt%K2MoO4 (CSSO-KMO) composite ceramics were fabricated by the cold sintering process at 180 °C under 400 MPa for 60 min. X-ray diffraction, Energy dispersive X-ray and Raman spectroscopy confirmed that CSSO and KMO coexisted without intermediate phases. As KMO weight fraction increased, relative permittivity (εr) and temperature coefficient of resonant frequency (τf) decreased and the microwave quality factor (Q×f, where f is resonant frequency) increased. Near-zero τf (-0.5 ppm/°C) was obtained for 65 wt%CSSO-35 wt%KMO with εr ~ 9.2 and Q×f ~ 6240 GHz. No chemical reaction between ceramic composites and silver was observed, demonstrating potential for cofiring with Ag-paste. A prototype antenna was fabricated from 65 wt%CSSO-35 wt%KMO composite ceramic with a bandwidth of 144 MHz @ -10 dB, a gain of 5.7 dBi and a total efficiency of 88.4 % at 5.2 GHz, suitable for 5 G mobile communication systems. 相似文献
9.
乙型肝炎核心病毒样颗粒HBc-VLPs (Hepatitis B Core Antigen Virus-like Particles)因稳定性好且易于改造,被作为疫苗载体广泛使用,但影响VLPs稳定性的控制机制尚不清楚。采用分子动力学模拟研究了HBc-VLP中蛋白亚基二聚体、五聚体及六聚体复合物的稳定性,计算了体系中蛋白亚基的介电常数,避免了以往研究中直接使用经验参数的做法;通过分子力学-泊松玻尔兹曼溶剂可及表面积(MM-PBSA)方法计算亚基分子间的结合自由能,表明范德华作用能和非极性溶剂化作用能有利于促进相邻蛋白亚基间的亲和作用;根据计算结果可推测HBc-VLPs中六聚体比五聚体的稳定性更强,而两个六聚体之间或五聚体同六聚体之间形成的二聚体有助于进一步形成结构更加稳定的HBc-VLPs。该结论有助于生物工程中对HBc-VLPs的蛋白质改造,从而提高HBc-VLPs为载体的候选疫苗的稳定性。 相似文献
10.
Pengfei Liang Jie Zhu Di Wu Hui Peng Xiaolian Chao Zupei Yang 《Journal of the American Ceramic Society》2021,104(6):2702-2710
Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO2-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag+/Nb5+ co-doped (Ag1/4Nb3/4)xTi1−xO2 (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 103 and 1.6 × 104 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics. 相似文献