(Cu1/3Nb2/3)4+ ionic substituting effects,low-temperature sintering behaviors,and improved temperature stability of Ba3Nb4Ti4O21 microwave dielectric ceramics

In this study, (Cu_1/3Nb_2/3)⁴⁺ complex cation and BaO–ZnO–B₂O₃ glass frit were adopted to solve the high sintering temperature and poor temperature stability of Ba₃Nb₄Ti₄O₂₁ ceramics. It is shown that pure Ba₃Nb₄Ti₄O₂₁ phase was formed when Ti site was partially replaced by (Cu_1/3Nb_2/3)⁴⁺ cation. The increasing number of dopants decreases the dielectric polarizability, correspondingly, the dielectric constant and temperature coefficient of the resonance frequency values are reduced consistently. The variation of the Q × f value is determined by internal ionic packing fraction and external sintering densification. The (Cu_1/3Nb_2/3)⁴⁺ cation effectively decreases the suitable sintering temperature from 1200 to 1050 °C while greatly improving the temperature stability. BaO–ZnO–B₂O₃ glass was used to further improve the low-temperature sintering characteristics of Ba₃Nb₄Ti₄O₂₁ ceramics. It is proven that the addition of glass frits effectively decreases the temperature to 925 °C with combinational excellent microwave dielectric properties: ε_r ～55.6, Q × f ～5700 GHz, τ_f ～3 ppm/^°C, making the Ba₃Nb₄Ti₄O₂₁ ceramics promising in the applications of low-temperature cofired ceramic technology.     

High Q×f values of Zn-Ni co-modified LiMg0.9Zn0.1-xNixPO4 microwave dielectric ceramics for 5G/6G LTCC modules

In this work, Zn-Ni co-modified LiMg_0.9Zn_0.1-xNi_xPO₄ (x = 0–0.1) microwave dielectric ceramics were fabricated using a solid state synthesis route. Rietveld refinement of the XRD data revealed that all ceramic samples have formed a single phase with olivine structure. SEM images showed that the samples have a dense microstructure, that agrees with the measured relative density of 97.73 %. Based on the complex chemical bond theory, Raman and infrared reflectance spectra, we postulate that ε_r is mainly affected by the ionic polarizability, lattice and bond energy, while P-O bond plays a decisive role in Q×f and τ_f value. Optimum properties of Q×f ~ 153,500 GHz, ε_r ~ 7.13 and τ_f ~ ?59 ppm/°C were achieved for the composition LiMg_0.9Zn_0.06Ni_0.04PO₄ sintered at 875 ℃ for 2 h. This set of properties makes these ceramics an excellent candidate for LTCC, wave-guide filters and antennas for 5 G/6 G communication applications.     

Cold sintered,temperature-stable CaSnSiO5-K2MoO4 composite microwave ceramics and its prototype microstrip patch antenna

Dense (1-x)wt%CaSnSiO₅-xwt%K₂MoO₄ (CSSO-KMO) composite ceramics were fabricated by the cold sintering process at 180 °C under 400 MPa for 60 min. X-ray diffraction, Energy dispersive X-ray and Raman spectroscopy confirmed that CSSO and KMO coexisted without intermediate phases. As KMO weight fraction increased, relative permittivity (ε_r) and temperature coefficient of resonant frequency (τ_f) decreased and the microwave quality factor (Q×f, where f is resonant frequency) increased. Near-zero τ_f (-0.5 ppm/°C) was obtained for 65 wt%CSSO-35 wt%KMO with ε_r ～ 9.2 and Q×f ～ 6240 GHz. No chemical reaction between ceramic composites and silver was observed, demonstrating potential for cofiring with Ag-paste. A prototype antenna was fabricated from 65 wt%CSSO-35 wt%KMO composite ceramic with a bandwidth of 144 MHz @ -10 dB, a gain of 5.7 dBi and a total efficiency of 88.4 % at 5.2 GHz, suitable for 5 G mobile communication systems.     

Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

Investigation of the microwave dielectric properties of the Li4x/3Zn2−2xTi1+2x/3O4 system by P–V–L theory and vibration spectroscopy

Li_4x/3Zn_2–2xTi_1+2x/3O₄ microwave dielectric ceramics with a spinel phase were prepared via a high-temperature solid-phase method. P–V–L theory, vibration spectra, and XPS were utilized to establish the links between the intrinsic and extrinsic factors and the microwave dielectric properties. According to the characterization, the change in permittivity (ε_r) was ascribed to the increase in the average bond ionicity of Ti–O(Af_iTi-O) and the polar mode of the lattice vibration; the change in quality factor(Q × f) resulted from the change in the Ti–O lattice energy (AU_Ti-O) and existence of oxygen vacancy; the increase in temperature coefficient of the resonance frequency (τ_f) was triggered by the increase in the Ti–O bond energy. The Li_0.6Zn_1.1Ti_1.3O₄ ceramics (x = 0.45) sintered at 1125 °C finally obtained optimal microwave dielectric constants of ε_r = 17.3, Q × f = 76,318 GHz and τ_f = -58 ppm/°C.     

Preparation,structure and microwave dielectric properties of novel La2MgGeO6 ceramics with hexagonal structure and adjustment of its τf value

A novel La₂MgGeO₆ ceramic was synthesized through a solid-state reaction process within a sintering temperature range of 1450–1550 °C. By a combination of X-ray diffraction and Rietveld refinement analyses, the ceramics were found to have a pure hexagonal phase structure belonging to space group R3/146. The scanning electron microscopy images revealed that the ceramic grains were closely connected. The effects of internal (lattice energy, valence bond, and fraction packing) and external factors (density) on the microwave properties of ceramics were also studied. The ceramic exhibited excellent microwave dielectric performances, with a relative permittivity (?_r) of 21.2, a quality factor (Q × f) of 52 360 GHz, and a temperature coefficient of resonant frequency (τ_f) of ?44.2 ppm/°C, when sintered at 1500 °C for 4 h. The τ_f value of the La₂MgGeO₆ ceramic doped with CaTiO₃ could be adjusted to zero. Particularly, 0.2La₂MgGeO₆-0.8CaTiO₃ ceramics have good microwave dielectric properties with τ_f = +2.1 ppm/°C, Q × f = 15 610 GHz, and ?_r = 40.3.     

Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

Cd-substituted NiZnCo ferrite with high dielectric constant and low coercivity for high-frequency electronic devices

This work investigated the effect of replacing Zn²⁺ ions with Cd²⁺ ions on the microstructure and electromagnetic properties of NiZnCo ferrites. The studies show that the Cd²⁺ ions substituted for Zn²⁺ ions at the A sites (tetrahedral sites) of the ferrite lattice. The large ionic radius of the Cd²⁺ ions can cause lattice distortion. Concurrently, the low melting point of CdO can effectively reduce the sintering temperature of NiZnCo ferrite, thereby significantly changing the magnetoelectric properties of NiZnCo ferrite. These changes are mainly manifested as the decrease in the saturation magnetization (Ms) from 66.6 to 58.5 emu/g and the increase in coercivity (Hc) from 31.2 to 34.8 Oe. The dielectric constant increases considerably, dielectric loss tanδ gradually decreases from 4.71 to 0.83 at 10 kHz, and DC resistivity ρ decreases considerably from 8.0 × 10⁴ to 1.61 × 10⁴ Ω m. Therefore, the substitution of Cd²⁺ ions in NiZnCo ferrite provides excellent electrical and magnetic properties, which provide a reference for the development of high-frequency miniaturized electronic equipment.     

用宽带超表面产生阵列贝塞尔光束

通过在空间光调制器（SLM）上加载相位图或通过光刻加工微型圆锥状结构可以产生贝塞尔光束阵列。然而，典型空间光调制器具有比波长大一个数量级的像素尺寸，这限制了相位梯度的可用范围，用光刻法加工的微型锥透镜的顶端不是标准的圆锥，这影响了贝塞尔光束的质量。为了克服这些缺点，将复杂的相位图加载到电介质超表面上，设计了一种可以产生阵列贝塞尔光束（在波长700 nm处，NA=0.3）的超表面器件。该器件可以宽波段工作，其单元结构在波长580~800 nm范围内的偏振转换效率均超过57%。利用时域有限差分算法（FDTD）对该器件（厚度为380 nm，直径仅为40 μm）进行了仿真，所产生的阵列光束都垂直于超表面器件。所提出的阵列贝塞尔光束发生器具有纳米级别的厚度和几十微米的直径，这对于未来的集成光学领域具有很大的应用前景。